Nanofabrication Technologies for Surface Texturing of Gallium Nitride Photonic Crystal Light-Emitting Diodes

2012 ◽  
pp. 89-110
Keyword(s):  
Gallium Nitride ◽  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Surface Texturing ◽  
Light Emitting

scholarly journals Nanofabrication of gallium nitride photonic crystal light-emitting diodes

2010 ◽  
Vol 87 (11) ◽  
pp. 2200-2207 ◽  
Author(s):  
Ali Z. Khokhar ◽  
Keith Parsons ◽  
Graham Hubbard ◽  
Faiz Rahman ◽  
Douglas S. Macintyre ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

scholarly journals Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes

2006 ◽  
Vol 14 (19) ◽  
pp. 8654 ◽  
Author(s):  
Hyun Kyong Cho ◽  
Junho Jang ◽  
Jeong-Hyeon Choi ◽  
Jaewan Choi ◽  
Jongwook Kim ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Extraction ◽  
Light Emitting
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