scholarly journals Editorial of Special Issue “Nanostructured Light-Emitters”

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 601
Author(s):  
Hieu P. T. Nguyen

Significant progress has been made in the development of nanophotonic devices and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, has recently attracted tremendous attention due to the fact of their unique geometry [...]

2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.


2018 ◽  
Vol 34 (4) ◽  
pp. 711-719 ◽  
Author(s):  
Eduardo Foschini Miranda ◽  
Welton Alves Diniz ◽  
Marcos Vinicius Nogueira Gomes ◽  
Marcelo Ferreira Duarte de Oliveira ◽  
Paulo de Tarso Camillo de Carvalho ◽  
...  

Author(s):  
Lyuchao Zhuang ◽  
Lingling Zhai ◽  
Yanyong Li ◽  
Ren Hui ◽  
Mingjie Li ◽  
...  

Metal halide perovskites are emerging materials for next-generation optoelectronic devices, of which all-inorganic CsPbBr3 perovskite has attracted increasing attention due to outstanding stability and excellent photoelectric characteristics compared with organic-inorganic...


1993 ◽  
Vol 191 (1-2) ◽  
pp. 119-123 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
J.W. Cook ◽  
J.F. Schetzina

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 897
Author(s):  
Chang-Yeol Han ◽  
Hyun-Sik Kim ◽  
Heesun Yang

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.


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