Enhanced Current Transport and Injection in Thin-Film Gallium-Nitride Light-Emitting Diodes by Laser-Based Doping

2014 ◽  
Vol 6 (19) ◽  
pp. 16601-16609 ◽  
Author(s):  
Su Jin Kim ◽  
Kyeong Heon Kim ◽  
Ho Young Chung ◽  
Hee Woong Shin ◽  
Byeong Ryong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Current Transport ◽  
Light Emitting

Thin Film 2-d Photonic Crystals High-Performance Light-Emitting Diodes

1999 ◽  
Author(s):  
Eli Yablonovitch ◽  
Misha Boroditsky ◽  
Rutger Vrijen ◽  
Thomas F. Krauss ◽  
Roberto Coccioli
Keyword(s):  
Thin Film ◽  
Photonic Crystals ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

Thin-film InGaN∕GaN Vertical Light Emitting Diodes Using GaN on Silicon-On-Insulator Substrates

2011 ◽  
Vol 14 (11) ◽  
pp. H460 ◽  
Author(s):  
Surani Bin Dolmanan ◽  
Siew Lang Teo ◽  
Vivian Kaixin Lin ◽  
Hui Kim Hui ◽  
Armin Dadgar ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Emitting Diodes ◽  
Silicon On Insulator ◽  
Light Emitting

Fabrication of Thin-Film Nitride-Based Light-Emitting Diodes

2017 ◽  
pp. 677-690
Author(s):  
Ray-Hua Horng ◽  
Dong-Sing Wuu ◽  
Chia-Feng Lin
Keyword(s):  
Thin Film ◽  
Light Emitting Diodes ◽  
Light Emitting
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