Cure of Hydrogen Silsesquioxane for Intermetal Dielectric Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
J.N. Bremme ◽  
Y. Liu ◽  
K.G. Gruszynski ◽  
F.C. Dall
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Dielectric Material ◽  
Structure And Properties ◽  
Hydrogen Silsesquioxane ◽  
Cure Time ◽  
Lower Temperature ◽  
Cure Temperature ◽  
Intermetal Dielectric ◽  
Temperature Time

AbstractCure is a significant process during back end of the line fabrication of integrated circuits with hydrogen silsesquioxane since it affects structure and properties of the spin on dielectric material. Reported herein is the effect of soak temperature, time, and oxygen concentration process parameters on structure and properties of hydrogen silsesquioxane. Results of the study emphasize the importance of an inert environment during the baseline recommended cure conditions of 400 °C for one hour in order to avoid oxidation and formation of polar silanol or water species. A 350 °C cure temperature is more robust to oxidation providing similar or improved properties. Shorter cure times result in similar structure and properties as the baseline cure which suggests that lower temperature and/or shorter cure time may provide value worth investigating by integrated circuit manufacturers.

Passivating Organic Coatings with Silicone Gels: The Correlation Between the Material Cure & its Electrical Reliability

1989 ◽  
Vol 154 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Protective Coatings ◽  
Low Cost ◽  
Chip Surface ◽  
Surface Protection ◽  
Cure Time ◽  
Silicone Gels ◽  
Cure Temperature ◽  
Electrical Reliability

AbstractSilicone gels are becoming some of the most accepted protective coatings for VLSI integrated circuits due to their excellent electrical, thermal, and soft gel-like nature and properties, as well as their ultra-purity and ability to protect IC devices against severe environments. Recent studies indicate that proper IC Chip surface protection with high performance silicone gels in low-cost, non-hermetic plastic packaging might well replace the conventional hermetic ceramic packaging. This paper describes the use of the soft silicone gels and coatings in IC devices. It also describes the correlation between the material cure temperature and cure time versus their adhesion and electrical reliability during 85°C, 85% RH and bias accelerating testing.

Gravimetric Measurements of Moisture Uptake in Polyimide Films Used in Integrated Circuit Packaging

1989 ◽  
Vol 154 ◽  
Author(s):  
Denice D. Denton ◽  
Hartono Pranjoto
Keyword(s):  
Steady State ◽  
High Temperature ◽  
Integrated Circuit ◽  
Dielectric Material ◽  
Measurement Techniques ◽  
Moisture Uptake ◽  
Electrical Measurements ◽  
Polyimide Films ◽  
Cure Temperature ◽  
Hygroscopic Behavior

AbstractPolyimide is used extensively in a variety of integrated circuit packaging applications. It is a good dielectric material with excellent planarizing capabilities, but like most polymers, it absorbs moisture. This hygroscopic behavior can lead to reliability problems in integrated circuit packages. The effects of variations in process history on moisture uptake are examined using gravimetric measurement techniques. In particular, the effects of cure schedule and exposure to high temperature/high humidity environments on steady state moisture uptake are reported. Steady state moisture uptake is shown to be a decreasing function of cure temperature. Moreover, the steady state moisture uptake in polyimide is greater after the samples have been “aged” in a high temperature and humidity ambient. Electrical measurements are used to examine the effects of cure temperature on diffusion kinetics of moisture in polyimide. The diffusion coefficient decreases with increasing cure temperature.

Effects of process history and aging on the properties of polyimide films

1991 ◽  
Vol 6 (12) ◽  
pp. 2747-2754 ◽  
Author(s):  
Denice D. Denton ◽  
Milan C. Buncick ◽  
Hartono Pranjoto
Keyword(s):  
Steady State ◽  
High Temperature ◽  
Chemical Composition ◽  
Integrated Circuit ◽  
Dielectric Material ◽  
Measurement Techniques ◽  
Moisture Uptake ◽  
Bulk Chemical ◽  
Cure Temperature ◽  
Hygroscopic Behavior

Polyimide is used extensively in a variety of integrated circuit packaging applications. It is a good dielectric material with excellent planarizing capabilities, but like most polymers, it absorbs moisture. This hygroscopic behavior can lead to reliability problems in integrated circuit packages. The effects of variations in process history on moisture uptake are examined using gravimetric measurement techniques. In particular, the effects of cure schedule and exposure to high temperature/high humidity environments (85 °C/85% RH) on steady state moisture uptake are reported. Steady state moisture uptake is shown to be a decreasing function of cure temperature. Samples cured at 250 °C absorb 25% more moisture by weight than do samples cured at 400 °C. Moreover, the steady state moisture uptake in polyimide is greater after the samples have been “aged” in a high temperature and humidity ambient. The bulk and surface chemical composition are also monitored as a function of aging using Fourier transform infrared spectroscopy (FTIR) and electron spectroscopy for chemical analysis (ESCA), respectively. The PI surface chemistry degrades after 700 h in an 85 °C/85% RH environment. The bulk chemical composition appears to be unaffected.

scholarly journals Shielding Device for Microwave Electronic Components of a Multilayer Board for the AFAR Transceiver Module for Space Purposes

2021 ◽  
Vol 8 (2) ◽  
pp. 82-87
Author(s):  
V. E. Poymalin ◽  
◽  
A. V. Buyankin ◽  
A. A. Nelin ◽  
L. E. Ragulina ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Electromagnetic Interference ◽  
Dielectric Material ◽  
Structural Elements ◽  
Space Technology ◽  
Monolithic Integrated Circuit ◽  
Faraday Cage ◽  
Microwave Electronic ◽  
Transceiver Module

A method of shielding the elements of a microwave module based on the principles of forming a Faraday cage, with different power and different frequency paths of the AFAR receiving-transmitting module, excluding their mutual electromagnetic influence, is presented. A description of the structure of a multilayer board and various structural elements is given, allowing to limit (screen) the signal in a small volume, commensurate with the size of a monolithic integrated circuit or a set of monolithic integrated circuits, isolating parasitic electromagnetic interference. Polyimide is considered as a dielectric material of a multilayer microwave board for use in space technology devices, as well as promising design solutions for reducing the mass and dimensions of the module.

Chemical Vapor Deposited Teflon Amorphous Fluoropolymer as an Interlevel Dielectric Material for Low Power Integrated Circuits

1997 ◽  
Vol 476 ◽  
Author(s):  
R. Sharangpani ◽  
R. Singh
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Integrated Circuit ◽  
Dielectric Material ◽  
Uv Light ◽  
Chemical Vapor ◽  
Ultra Violet ◽  
Performance Standards ◽  
Dielectric Performance ◽  
Direct Liquid Injection

AbstractThe development of materials with dielectric constant (K) less than SiO2 (K=3.9) is essential to meet the stringent speed, power dissipation and crosstalk requirements that are driving the low power integrated circuit (IC) paradigm. Both the low K dielectric and the processing methodology used for it should satisfy several important criteria before the technique can be accepted in future mainstream low power IC manufacturing. We had reported earlier a chemical vapor deposition (CVD) technique for the deposition of DuPont's Teflon amorphous fluoropolymer 1600 (bulk K=1.93) using the principle of direct liquid injection. The processing was carried out with and without an ultra violet (UV) light source in a computerized rapid isothermal processing (RIP) system.Recently, we have extensively characterized the films and examined the suitability of our technique in light of some of the requirements of the future IC industry. Our results indicate that the processed films exceed several of the established dielectric performance standards outlined in recent roadmaps for sub 0.25 μm ICs. The film properties were improved when the UV source was used during processing. CVD processed films in general demonstrated significant improvements in terms of manufacturability, throughput, cost, and dielectric properties over the same films processed by alternate techniques.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Micromechanics Measurements Applied to Integrated Circuit Microelectronics

1997 ◽  
Vol 473 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Fracture Resistance ◽  
Interface Fracture ◽  
New Techniques ◽  
Fracture Properties ◽  
Engineered Structures ◽  
Mechanical And Fracture Properties ◽  
Interconnect Lines ◽  
Metallic Interconnect

ABSTRACTAs in other engineered structures, fracture occasionally occurs in integrated microelectronic circuits. Fracture can take a number of forms including voiding of metallic interconnect lines, decohesion of interfaces, and stress-induced microcracking of thin films. The characteristic feature that distinguishes such fracture phenomena from similar behaviors in other engineered structures is the length scales involved, typically micron and sub-micron. This length scale necessitates new techniques for measuring mechanical and fracture properties. In this work, we describe non-contact optical techniques for probing strains and a microscopic “decohesion” test for measuring interface fracture resistance in integrated circuits.

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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