Chemical Vapor Deposited Teflon Amorphous Fluoropolymer as an Interlevel Dielectric Material for Low Power Integrated Circuits

1997 ◽  
Vol 476 ◽  
Author(s):  
R. Sharangpani ◽  
R. Singh
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Integrated Circuit ◽  
Dielectric Material ◽  
Uv Light ◽  
Chemical Vapor ◽  
Ultra Violet ◽  
Performance Standards ◽  
Dielectric Performance ◽  
Direct Liquid Injection

AbstractThe development of materials with dielectric constant (K) less than SiO2 (K=3.9) is essential to meet the stringent speed, power dissipation and crosstalk requirements that are driving the low power integrated circuit (IC) paradigm. Both the low K dielectric and the processing methodology used for it should satisfy several important criteria before the technique can be accepted in future mainstream low power IC manufacturing. We had reported earlier a chemical vapor deposition (CVD) technique for the deposition of DuPont's Teflon amorphous fluoropolymer 1600 (bulk K=1.93) using the principle of direct liquid injection. The processing was carried out with and without an ultra violet (UV) light source in a computerized rapid isothermal processing (RIP) system.Recently, we have extensively characterized the films and examined the suitability of our technique in light of some of the requirements of the future IC industry. Our results indicate that the processed films exceed several of the established dielectric performance standards outlined in recent roadmaps for sub 0.25 μm ICs. The film properties were improved when the UV source was used during processing. CVD processed films in general demonstrated significant improvements in terms of manufacturability, throughput, cost, and dielectric properties over the same films processed by alternate techniques.

Cure of Hydrogen Silsesquioxane for Intermetal Dielectric Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
J.N. Bremme ◽  
Y. Liu ◽  
K.G. Gruszynski ◽  
F.C. Dall
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Dielectric Material ◽  
Structure And Properties ◽  
Hydrogen Silsesquioxane ◽  
Cure Time ◽  
Lower Temperature ◽  
Cure Temperature ◽  
Intermetal Dielectric ◽  
Temperature Time

AbstractCure is a significant process during back end of the line fabrication of integrated circuits with hydrogen silsesquioxane since it affects structure and properties of the spin on dielectric material. Reported herein is the effect of soak temperature, time, and oxygen concentration process parameters on structure and properties of hydrogen silsesquioxane. Results of the study emphasize the importance of an inert environment during the baseline recommended cure conditions of 400 °C for one hour in order to avoid oxidation and formation of polar silanol or water species. A 350 °C cure temperature is more robust to oxidation providing similar or improved properties. Shorter cure times result in similar structure and properties as the baseline cure which suggests that lower temperature and/or shorter cure time may provide value worth investigating by integrated circuit manufacturers.

scholarly journals Shielding Device for Microwave Electronic Components of a Multilayer Board for the AFAR Transceiver Module for Space Purposes

2021 ◽  
Vol 8 (2) ◽  
pp. 82-87
Author(s):  
V. E. Poymalin ◽  
◽  
A. V. Buyankin ◽  
A. A. Nelin ◽  
L. E. Ragulina ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Electromagnetic Interference ◽  
Dielectric Material ◽  
Structural Elements ◽  
Space Technology ◽  
Monolithic Integrated Circuit ◽  
Faraday Cage ◽  
Microwave Electronic ◽  
Transceiver Module

A method of shielding the elements of a microwave module based on the principles of forming a Faraday cage, with different power and different frequency paths of the AFAR receiving-transmitting module, excluding their mutual electromagnetic influence, is presented. A description of the structure of a multilayer board and various structural elements is given, allowing to limit (screen) the signal in a small volume, commensurate with the size of a monolithic integrated circuit or a set of monolithic integrated circuits, isolating parasitic electromagnetic interference. Polyimide is considered as a dielectric material of a multilayer microwave board for use in space technology devices, as well as promising design solutions for reducing the mass and dimensions of the module.

Minimization of Leakage Currents in Dram 4x4 Using SVL Technique

2021 ◽  
pp. 221-228
Author(s):  
N. Geetha Rani ◽  
C. Soundarya Lahari ◽  
G. Revathi ◽  
K. Chandrika ◽  
G. Riya
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Integrated Circuit ◽  
Heat Dissipation ◽  
Average Power ◽  
Complementary Metal Oxide Semiconductor ◽  
Low Power Design ◽  
Oxide Semiconductor ◽  
Portable Devices ◽  
Leakage Currents

In recent years, due to development of integrated circuits technology, power is being given comparable weight to area and speed considerations. The power consumed for any given function in any complementary metal-oxide-semiconductor (CMOS) circuit must be reduced for either of the two different reasons. One is to reduce heat dissipation in order to allow a large density of functions to be incorporated on an Integrated Circuit (IC) chip. Any amount of power dissipation is worthwhile as long as it does not degrade overall circuit performance. The other reason is to save energy in battery operated instruments like in electronic watches where average power is in microwatts. Low power is the major issue not only in portable devices but also in non-portable devices. So, it is apparent that one has to resolve low power design methodologies for the design of high throughput, low power digital systems. By using this SVL technique using DRAM we are going to reduce the leakage currents and also improves the performance of the circuit.

Laser-Chemical Deposition and Etching on the Metallization Level of Integrated Circuits

1986 ◽  
Vol 75 ◽  
Author(s):  
A. Wayne Johnson ◽  
K. E. Greenberg
Keyword(s):  
Integrated Circuits ◽  
Circuit Design ◽  
Integrated Circuit ◽  
Pulsed Laser ◽  
Chemical Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Chlorine Gas ◽  
Doped Silicon ◽  
And Control

AbstractLaser-controlled chemical deposition and etching techniques were used to modify integrated circuits. This work used a pulsed laser to initiate and control the etching, by chlorine gas, of aluminum conductors. New conducting paths were then formed by laser-chemical vapor deposition of highly-doped silicon from silane and diborane. Improved conductivity of laser-deposited connectors was achieved by the selective deposition of tungsten on the silicon. These techniques were used to “rewire” an integrated circuit allowing the full evaluation of the corrected circuit design.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Micromechanics Measurements Applied to Integrated Circuit Microelectronics

1997 ◽  
Vol 473 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Fracture Resistance ◽  
Interface Fracture ◽  
New Techniques ◽  
Fracture Properties ◽  
Engineered Structures ◽  
Mechanical And Fracture Properties ◽  
Interconnect Lines ◽  
Metallic Interconnect

ABSTRACTAs in other engineered structures, fracture occasionally occurs in integrated microelectronic circuits. Fracture can take a number of forms including voiding of metallic interconnect lines, decohesion of interfaces, and stress-induced microcracking of thin films. The characteristic feature that distinguishes such fracture phenomena from similar behaviors in other engineered structures is the length scales involved, typically micron and sub-micron. This length scale necessitates new techniques for measuring mechanical and fracture properties. In this work, we describe non-contact optical techniques for probing strains and a microscopic “decohesion” test for measuring interface fracture resistance in integrated circuits.

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

The Radio Probe™: A New Measurement Tool for High Speed Integrated Circuits

2005 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
High Speed ◽  
Attenuation Factor ◽  
Cost Effective ◽  
Frequency Measurement ◽  
Single Frequency ◽  
Measurement Tool ◽  
Probe Design ◽  
Differential Measurement

Abstract This article presents a novel tool designed to allow circuit node measurements in a radio frequency (RF) integrated circuit. The discussion covers RF circuit problems; provides details on the Radio Probe design, which achieves an input impedance of 50Kohms and an overall attenuation factor of 0 dB; and describes signal to noise issues in the output signal, along with their improvement techniques. This cost-effective solution incorporates features that make it well suited to the task of differential measurement of circuit nodes within an RF IC. The Radio Probe concept offers a number of advantages compared to active probes. It is a single frequency measurement tool, so it complements, rather than replaces, active probes.

A Technique for Reliably Preparing Full-Length Metallographic Cross-Sections of Integrated Circuit Bond Wires

2006 ◽  
Author(s):  
Carl Nail
Keyword(s):  
Integrated Circuits ◽  
High Precision ◽  
Cross Sections ◽  
Integrated Circuit ◽  
Radiographic Analysis ◽  
Good Resolution ◽  
Metallographic Preparation ◽  
Bond Wires ◽  
Darkfield Imaging ◽  
Bond Wire

Abstract To overcome the obstacles in preparing high-precision cross-sections of 'blind' bond wires in integrated circuits, this article proposes a different technique that generates reliable, repeatable cross-sections of bond wires across most or all of their lengths, allowing unencumbered and relatively artifact-free analysis of a given bond wire. The basic method for cross-sectioning a 'blind' bond wire involves radiographic analysis of the sample and metallographic preparation of the sample to the plane of interest. This is followed by tracking the exact location of the plane on the original radiograph using a stereomicroscope and finally darkfield imaging in which the wire is clearly visible with good resolution.

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