Parylene AF-4: A Low εR Material Candidate For ULSI Multilevel Interconnect Applications

1996 ◽  
Vol 443 ◽  
Author(s):  
A.S. Harrus ◽  
M.A. Plano ◽  
D. Kumar ◽  
J. Kelly
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Vapor Deposition ◽  
Mechanical Stability ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Good Adhesion ◽  
Low Dielectric ◽  
Device Integration ◽  
Electrical Data

AbstractParylene VIPTM AF-4 dielectric is a potential low εR candidate for ULSI manufacture. The search for new IMD materials with low dielectric constant (k ≤ 2.5) to enable sub 0.18 micron technologies is focusing on new polymers, deposited by either spinning or CVD methods. Two classes of requirements have to be satisfied for a material to be successful, i.e., used in volume device manufacturing. First, a set of physical characteristics have to be met, among the most important are thermal stability above 400 °C, mechanical stability, and good adhesion to a variety of substrates. Then, a second set of more stringent requirements have to be met related to device integration. For example, electrical performance in a device and dry etching for via formation. We report results on the evaluation of Parylene AF-4, deposited by vapor-deposition polymerization of tetrafluoro-p-xylylene. We present data on deposition characteristics, film composition and purity, thermal stability as well as preliminary electrical data.

Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors

2011 ◽  
Vol 233-235 ◽  
pp. 2480-2485
Author(s):  
Yi Lung Cheng ◽  
Yi Shiung Lu ◽  
Tai Jung Chiu
Keyword(s):  
Thermal Stability ◽  
Vapor Deposition ◽  
Large Scale ◽  
Dielectric Material ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Large Scale Integration ◽  
Scale Integration

Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition (PECVD) in this work. The experimental results indicate that DEMS-based low-k films have superior electrical performance and better thermal stability as compared to 3MS-based low-k films. Therefore, DEMS-based films are the promising low-k materials which can be integrated in very large scale integration circuit as an inter-layer dielectric material.

Fluorinated Amorphous Carbon as a Low-Dielectric-Constant Interlayer Dielectric

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 55-58 ◽  
Author(s):  
Kazuhiko Endo
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Plasma Polymerization ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Source Materials

Low-k organic polymers such as polytetrafluoroethylene (PTFE) are promising materials for use as interlayer dielectrics (ILD) because their dielectric constants are generally lower than those of inorganic materials. However poor adhesion with Si substrates, poor thermal stability, and production difficulties have hindered their use in microelectronics.On the other hand, plasma-enhanced chemical vapor deposition (PECVD) of polymer films (plasma polymerization) has many advantages that help to overcome these problems. Plasma-enhanced chemical vapor deposition uses a glow discharge to create activated species such as radicals and ions from the original monomer, and the polymer films are deposited through various gas-phase and surface reactions of these active species, including ablation of the deposited film. No water is generated during plasma polymerization, and the influence of a solvent can be ignored. Also a layered structure that promotes adhesion can be easily fabricated by changing the source compounds.Recently the use of fluorinated amorphous carbon thin films (a-C:F) as new low-dielectric-constant interlayer dielectrics has been proposed. These thin films have an amorphous C–C cross-linked structure (including sp3 and sp2 bonded carbon) and have the same C–F bonds found in PTFE. The strong C–F bonds decrease the dielectric constant, and the C–C crosslinked structure maintains the film's thermal stability. The a-C:F film can be deposited from fluorocarbon source materials using PECVD. Typically fluorocarbons such as CF4, C2F6, C4F8, and their hydrogen mixtures are used as source materials. First the a-C:F films for low-k ILD, with a dielectric constant of 2.1, were deposited from CH4 + CF4 mixtures by using parallel-plate PECVD.

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

Deposition of Fluorinated Amorphous Carbon Thin Films with Low Dielectric Constant and Thermal Stability

2000 ◽  
Vol 612 ◽  
Author(s):  
Sang-Soo Han ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Stable Condition ◽  
Flow Rate Ratio ◽  
Low Dielectric Constant ◽  
Low Dielectric

AbstractFluorinated amorphous carbon (a-C:F) thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with increasing CF4:CH4 gas flow rate ratio, and then annealed with increasing annealing temperature (100, 200, 300, and 400.). We have found the reduction mechanism of the dielectric constant and the thermally stable condition for the a-C:F films. On the basis of the results, the optimal condition to satisfy both the low dielectric constant and the thermal stability is followed as; the a-C:F films have to have the compatible F content to make a compromise between the two properties; the C-Fx bonding configuration has to exist as a form of C-F2 & C-F3 instead of C-F; The films should be somewhat cross-linked structure.

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