Effects of nitridation by nitric oxide on the leakage current of thin SiO2 gate oxides

2000 ◽  
Vol 87 (1) ◽  
pp. 498-501 ◽  
Author(s):  
C. Gerardi ◽  
M. Melanotte ◽  
S. Lombardo ◽  
M. Alessandri ◽  
B. Crivelli ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Leakage Current ◽  
Gate Oxides

Logistic model for leakage current in electrical stressed ultra-thin gate oxides

2003 ◽  
Vol 39 (9) ◽  
pp. 749 ◽  
Author(s):  
E. Miranda ◽  
A. Cester ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Logistic Model ◽  
Gate Oxides

Stress induced leakage current in ultra-thin gate oxides after constant current stress

1997 ◽  
Vol 36 (1-4) ◽  
pp. 145-148 ◽  
Author(s):  
A. Scarpa ◽  
G. Ghibaudo ◽  
G. Ghidini ◽  
G. Pananakakis ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Constant Current ◽  
Gate Oxides ◽  
Current Stress ◽  
Stress Induced Leakage Current

Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

1999 ◽  
Vol 567 ◽  
Author(s):  
H. F. Luan ◽  
A. Y. Mao ◽  
S. J. Lee ◽  
T. Y. Luo ◽  
D. L. Kwong
Keyword(s):  
Nitric Oxide ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Passivation Layer ◽  
No Oxidation ◽  
Oxidation Temperature ◽  
High Quality ◽  
Si Substrates ◽  
High Oxidation

ABSTRACTWe have fabricated very thin TiO2 film (Teq∼20Å) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders magnitude lower than SiO2 of identical Teq. Results show that NO passivation layer prior to sputtering is critical in reducing the leakage current. XPS results show that the temperature RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO2 films. high oxidation temperature an SiO2 layer is formed at the interface between TiO2 and Si and the leakage current is approaching to that of SiO2.

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

2020 ◽  
Vol 1004 ◽  
pp. 635-641
Author(s):  
Peyush Pande ◽  
Sima Dimitrijev ◽  
Daniel Haasmann ◽  
Hamid Amini Moghadam ◽  
Philip Tanner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Comparative Analysis ◽  
Direct Measurement ◽  
Measurement Technique ◽  
Measurement Method ◽  
Gate Oxide ◽  
Interface Traps ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Direct Measurement Method

This paper presents a comparative analysis of the electrically active near-interface traps, energetically located above the bottom of conduction band. Two different samples of N-type SiC MOS capacitors were fabricated with gate oxides grown in (1) dry O2 (as-grown) and (2) dry O2 annealed in nitric oxide (nitride). Measurements performed by the direct measurement method revealed that the traps located further away from the SiO2/SiC interface are removed by nitridation. A spatially localized behaviour of NITs is observed only in the nitrided gate oxide but not in the as-grown gate oxide.

A model of the stress induced leakage current in gate oxides

2001 ◽  
Vol 48 (2) ◽  
pp. 285-288 ◽  
Author(s):  
L. Larcher ◽  
A. Paccagnella ◽  
G. Ghidini
Keyword(s):  
Leakage Current ◽  
Gate Oxides ◽  
Stress Induced Leakage Current

A model of radiation induced leakage current (RILC) in ultra-thin gate oxides

1999 ◽  
Vol 46 (6) ◽  
pp. 1553-1561 ◽  
Author(s):  
L. Larcher ◽  
A. Paccagnella ◽  
M. Ceschia ◽  
G. Ghidini
Keyword(s):  
Leakage Current ◽  
Gate Oxides ◽  
Radiation Induced

Nitric Oxide Rapid Thermal Nitridation of Thin Gate Oxides

1997 ◽  
Vol 470 ◽  
Author(s):  
J. Kuehne ◽  
S. Hattangady ◽  
J. Piccirillo ◽  
G. C. Xing ◽  
G. E. Miner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Secondary Ion Mass Spectrometry ◽  
Minority Carrier Lifetime ◽  
Oxide Thickness ◽  
Atomic Percent ◽  
Gate Oxides ◽  
Nitrogen Incorporation ◽  
Nitrogen Concentrations ◽  
Thermal Nitridation ◽  
Percent Nitrogen

ABSTRACTNitric oxide rapid thermal nitridation of thin gate oxides was investigated. Oxides from 25 to 55 Å were grown in O2 and subsequently nitrided in a nitric oxide (NO) ambient using an Applied Materials RTP Centura chamber. Nitrogen incorporation and film thickness growth during NO nitridation were evaluated. Peak nitrogen incorporation was most strongly influenced by temperature and time, with moderate influence by initial oxide thickness, and no significant influence due to NO flow rate. Peak nitrogen concentrations ranged from 1 to 9 atomic percent as characterized by Secondary Ion Mass Spectrometry (SIMS) analysis. Oxide growth during nitridation ranged from 2 Å to 11 Å with no degradation in uniformity. These data were used in the design of two 40 Å oxynitride processes incorporating 2 and 4 peak atomic percent nitrogen. High quality MOS capacitors were demonstrated with these dielectrics. Performance was compared against a baseline furnace process as well as non-nitrided RTO. Throughout this work, the chamber integrity was monitored using visual inspection, minority carrier lifetime (MCLT) and surface photovoltage (SPV). No contamination, corrosion or other degradation of the process chamber was observed in over 6 months' operation with over 700 NO processes completed. The controllability, uniformity and high nitrogen incorporation of rapid thermal NO nitridation make it an attractive process for deep sub-micron gate insulators.

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