Integrated Vapor Phase Cleaning and Pure no Nitridation for Gate Stack Formation

1997 ◽  
Vol 470 ◽  
Author(s):  
F. Glowacki ◽  
B. Froeschle ◽  
L. Deutschmann ◽  
I. Sagnes ◽  
D. Laviale ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Process Development ◽  
Chemical Vapor ◽  
Gate Stack ◽  
Wafer Processing ◽  
First Time ◽  
Cluster Tool ◽  
Insight Into

ABSTRACTThe purpose of this publication is to give an insight into process development performed in two modules which belong to a cluster tool designed for the gate stack process sequence of cleaning, gate oxidation, and polysilicon chemical vapor deposition. For the first time, following the hardware and software MESC-based standards, two suppliers have integrated complementary modules to build a cluster tool. This equipment answers the demands of the 1C Manufacturers and follows the “best of breed” approach. Four single wafer rapid thermal process chambers, a Vapor Phase Cleaning (VPC) and a Rapid Thermal Oxidation/Nitridation (RTO/N) module from STEAG-AST Elektronik, a polysilicon and a nitride chemical vapor deposition module from ASM International are currently connected together to prove the feasibility of the single wafer processing gate stack cluster tool.

The Merits of Integrated Processing for Gate Stack Formation

1995 ◽  
Vol 387 ◽  
Author(s):  
John M. Grant
Keyword(s):  
Vapor Phase ◽  
Process Development ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Gate Stack ◽  
Integrated Processing ◽  
Oxide Substrate ◽  
Wafer Processing ◽  
Cluster Tool

AbstractThis work presents the results of process development in a cluster tool designed for the gate stack process of cleaning, gate oxidation, and polysilicon chemical vapor deposition. The cluster tool connects three single wafer process chambers together with a vacuum transfer chamber. The purpose of this work was to test the feasibility of the single wafer processing gate oxidation cluster tool from an electrical performance standpoint, Cleaning was performed using a gas/vapor phase process, and the results using a standard oxide indicate that gas/vapor phase cleaning is at the least comperable and possibly more effective at contamination removal than the standard RCA wet cleaining process. The oxidation was performed using rapid thermal processing, and the effect of adding nitrogen to the oxide by oxidation in an N2O containing ambient was tested. The results indicated that oxides at least at good as those grown in a conventional furnace could be produced in the cluster tool, and the nitrogen at the oxide-substrate interface improves the reliability of the oxide if the nitrogen concentration is kept below 1 atomic %.

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Diamond growth on thin Ti wafers via chemical vapor deposition

1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Titanium Substrate ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Diamond Growth ◽  
X Ray ◽  
Hot Filament ◽  
Insight Into

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.

scholarly journals Vapor deposition routes to conformal polymer thin films

2017 ◽  
Vol 8 ◽  
pp. 723-735 ◽  
Author(s):  
Priya Moni ◽  
Ahmed Al-Obeidi ◽  
Karen K Gleason
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Sample Preparation ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Imaging Techniques ◽  
Polymer Thin Films ◽  
Chemical Vapor ◽  
Short Review ◽  
Deposition Sample

Vapor phase syntheses, including parylene chemical vapor deposition (CVD) and initiated CVD, enable the deposition of conformal polymer thin films to benefit a diverse array of applications. This short review for nanotechnologists, including those new to vapor deposition methods, covers the basic theory in designing a conformal polymer film vapor deposition, sample preparation and imaging techniques to assess film conformality, and several applications that have benefited from vapor deposited, conformal polymer thin films.

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD

2017 ◽  
Vol 897 ◽  
pp. 91-94
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Michael Cromar ◽  
Bart van Zeghbroeck
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Degrees Of Freedom ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Cubic Silicon Carbide ◽  
First Time

In this paper, we report, for the first time, growth of high-quality single-crystalline 3C-SiC on silicon substrates using Hot Filament Chemical Vapor Deposition (HF-CVD). Rocking curve X-Ray diffraction (XRD) measurements revealed a full-width at half maximum (FWHM) as low as 333 arcsec for a 15 μm thick layer. Low tensile strain, below 0.1%, was measured using Raman spectroscopy. This quality was achieved with a carefully optimized process making use of the additional degrees of freedom the hot filaments create. For example, the hot filaments allow for precursor pre-cracking. Additionally, they allow a tuning of the vertical thermal gradient which creates an improved thermal field compared to classic Chemical Vapor Deposition techniques used for the deposition of this material today.

Single and Symmetric Double Two-Dimensional Hole Gases at Si/SiGe Heterojunctions Grown by Rapid Thermal Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
V. Venkataraman ◽  
J. C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Dopant Segregation ◽  
Thermal Chemical Vapor Deposition ◽  
Double Heterostructures ◽  
First Time

ABSTRACTTwo dimensional hole gases have been investigated in Si/SiGe modulation doped heterostructures grown by RT-CVD for the first time. Single, both normal and inverted, and double heterostructures were studied. The results suggest that any asymmetry due to dopant segregation or autodoping between the normal and inverted structures occurs on a scale of less than 1 nm.

Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN

MRS Bulletin ◽  
1999 ◽  
Vol 24 (1) ◽  
pp. 21-25 ◽  
Author(s):  
G. Brian Stephenson ◽  
Jeffrey A. Eastman ◽  
Orlando Auciello ◽  
Anneli Munkholm ◽  
Carol Thompson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Real Time ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Rays ◽  
Production Scale ◽  
X Ray

Vapor-phase processes such as chemical vapor deposition (CVD) and reactive ion etching are the primary methods for the production-scale synthesis and processing of many high-quality thin-film materials. For example, these processes are widely used in the microelectronics industry for synthesis and lithography of the various semiconducting, insulating, and conducting layers in devices. Understanding the means of controlling the microstructure and composition of these materials is of great technological interest. However a difficulty often encountered in developing vapor-phase processes is an undesirable dependence on trial-and-error methods for optimizing the many process parameters. These parameters include gas composition, flow rate, pressure, and substrate temperature, all of which are typically changing with time. This reliance on empirical methods can be attributed to the tremendous chemical and physical complexity of vapor-phase processes and the lack of appropriate in situ measurement techniques for the vapor-phase environment.We have initiated a program to apply synchrotron x-ray analysis techniques as real-time probes of film and surface structure during vapor-phase processing. X-rays have a combination of properties which makes them particularly well-suited for these studies. Unlike electrons, x-rays have a sufficiently low absorption to penetrate vapor-phase processing environments and chamber walls. Unlike visible light, x-rays have wavelengths and energies suitable for study of atomic-scale structure and chemistry. A growing number of in situ synchrotron x-ray investigations of film growth and processing demonstrate the power of these techniques.

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