GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide

2010 ◽  
Vol 28 (5) ◽  
pp. 1011-1015 ◽  
Author(s):  
A. Y. Polyakov ◽  
A. V. Markov ◽  
M. P. Duhnovsky ◽  
M. V. Mezhennyi ◽  
A. A. Donskov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Chemical Vapor Deposition Diamond ◽  
Surface Nanostructuring ◽  
Al Oxide

Incorporation of oxygen and chlorine atoms into low‐temperature (850 °C) silicon epitaxial films by chemical vapor deposition

1995 ◽  
Vol 66 (21) ◽  
pp. 2867-2869 ◽  
Author(s):  
Akihiro Miyauchi ◽  
Kazuhiro Ueda ◽  
Yousuke Inoue ◽  
Takaya Suzuki ◽  
Yoshinori Imai
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Chlorine Atoms
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