Chemical vapor deposition of TiSi[sub 2] using an industrial integrated cluster tool

1997 ◽  
Vol 15 (1) ◽  
pp. 133 ◽  
Author(s):  
D. Maury
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cluster Tool

Integrated Vapor Phase Cleaning and Pure no Nitridation for Gate Stack Formation

1997 ◽  
Vol 470 ◽  
Author(s):  
F. Glowacki ◽  
B. Froeschle ◽  
L. Deutschmann ◽  
I. Sagnes ◽  
D. Laviale ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Process Development ◽  
Chemical Vapor ◽  
Gate Stack ◽  
Wafer Processing ◽  
First Time ◽  
Cluster Tool ◽  
Insight Into

ABSTRACTThe purpose of this publication is to give an insight into process development performed in two modules which belong to a cluster tool designed for the gate stack process sequence of cleaning, gate oxidation, and polysilicon chemical vapor deposition. For the first time, following the hardware and software MESC-based standards, two suppliers have integrated complementary modules to build a cluster tool. This equipment answers the demands of the 1C Manufacturers and follows the “best of breed” approach. Four single wafer rapid thermal process chambers, a Vapor Phase Cleaning (VPC) and a Rapid Thermal Oxidation/Nitridation (RTO/N) module from STEAG-AST Elektronik, a polysilicon and a nitride chemical vapor deposition module from ASM International are currently connected together to prove the feasibility of the single wafer processing gate stack cluster tool.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers

Microstructure of Carbon Film Deposited Using Hot-Filament Chemical Vapor Deposition

2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Hot Filament
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