Development of GaN and InGaN Gratings by Dry Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
J. W. Lee ◽  
J. Hong ◽  
J. D. Mackenzie ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dry Etching ◽  
Holographic Lithography ◽  
Periodic Gratings

ABSTRACTSub-micron periodic gratings with pitch ∼3,000Å were formed in GaN and InGaN using holographic lithography and room temperature ECR BCl3/N2 dry etching at moderate microwave (500W) and rf (100W) powers. The process produces uniform gratings without the need for elevated sample temperatures during the etch step.

Invited Paper Dry Etching Of Indium Phosphide At Room Temperature

1985 ◽  
Author(s):  
G. F. Doughty ◽  
C. L. Dargan ◽  
C. D. W. .. Wilkinson
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Dry Etching

Silicon dry etching profile control by RIE at room temperature for MEMS applications

2005 ◽  
Author(s):  
D. Vrtacnik ◽  
D. Resnik ◽  
U. Aljancic ◽  
M. Mozek ◽  
S. Amon
Keyword(s):  
Room Temperature ◽  
Dry Etching ◽  
Profile Control ◽  
Etching Profile

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
Jae-Won Lee ◽  
Hyong-Soo Park ◽  
Yong-Jo Park ◽  
Myong-Cheol Yoo ◽  
Tae-Il Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Ion Beam Etching ◽  
Etching Profile ◽  
Etching Parameters ◽  
Etching Selectivity ◽  
Reactive Ion Beam Etching

ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

Accurate Dry Etching with Fluorinated Gas for Two-dimensional Si Photonic Crystal

2000 ◽  
Vol 637 ◽  
Author(s):  
Chiharu Takahashi ◽  
Jun-Ichi Takahashi ◽  
Masaya Notomi ◽  
Itaru Yokohama
Keyword(s):  
Photonic Crystal ◽  
Room Temperature ◽  
High Selectivity ◽  
Photonic Band Gap ◽  
Electronic Devices ◽  
Dry Etching ◽  
Two Dimensional ◽  
Ecr Plasma ◽  
Etching Mask ◽  
Photonic Band

AbstractAnisortopic Si dry etching is usually carried out with chlorinated gases for electronic devices such as Si-LSIs. We had another look at Si dry etching with fluorinated gases in order to obtain an ideal air hole for two-dimensional Si photonic crystal. We simulated vertical Si etching, and showed the possibility that single crystal Si can be etched vertically with high selectivity to the etching mask using fluorinated gases. We investigated ECR etching with an SF6-CF4 mixture, and vertical Si etching was achieved at room temperature. High Si/Ni selectivity above 100 was also obtained. Two-dimensional Si photonic crystal with a photonic band gap between 1.25 and 1.51 μm was produced using SF6-CF4 ECR plasma and a thin Ni mask.

Formation of Long Wavelength InP Laser MESAS

1993 ◽  
Vol 300 ◽  
Author(s):  
F. Ren ◽  
S. J. Pearton ◽  
B. Tseng ◽  
J. R. Lothian ◽  
C. Constantine
Keyword(s):  
Elevated Temperature ◽  
Etch Rate ◽  
Room Temperature ◽  
Plasma Chemistry ◽  
Dry Etching ◽  
Pattern Transfer ◽  
Process Step ◽  
Long Wavelength ◽  
Low Degree ◽  
Etched Surface

ABSTRACTNarrow (1 μm), deep (3.5 μm) laser mesas have been formed on 2”φ InP wafers using stepper lithography and dry etching techniques for both dielectric and semiconductor patterning. Contrast enhancement techniques produce excellent edge acuity and vertical sidewalls on the initial photoresist lines. Pattern transfer to the underlying SiO2 regrowth mask is achieved by ECR SF6/Ar dry etching at 1 mTorr and –100V, conditions which also retain the verticality of the mesa. The semiconductor is etched using an ECR Cl2/CH4/H2/Ar discharge at 0.3 mTorr and –80V, with the sample held at ∼ 150°C. The etch rate under these conditions is ∼1 μm/min, with a selectivity of ≥10:1 for the semiconductor over the dielectric mask. The smooth etched surface and low degree of damage make this process ideal for epitaxial regrowth. The uniformity of each process step is also acceptable (≤7%). Comparison of the elevated temperature Cl2/CH4/H2/Ar mixture with the more conventional room temperature CH4/H2 plasma chemistry will be given.

Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method

2003 ◽  
Vol 42 (Part 2, No. 7A) ◽  
pp. L748-L750 ◽  
Author(s):  
Hideki Yagi ◽  
Takuya Sano ◽  
Kazuya Ohira ◽  
Takeo Maruyama ◽  
Anisul Haque ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Room Temperature ◽  
Continuous Wave ◽  
Dry Etching ◽  
Multiple Quantum ◽  
Continuous Wave Operation

Iodine-Based dry Etching Chemistries for InP and Related Compounds

1992 ◽  
Vol 282 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. Katz ◽  
C. R. Abernathy ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dry Etching ◽  
Reaction Products ◽  
Ion Density ◽  
Sample Heating ◽  
Polymer Deposition ◽  
Etch Rates ◽  
Microwave Discharges ◽  
Related Compounds

ABSTRACTA comparison is given of the dry etching characteristics of InP and related materials in high ion density (>1011 cm−2 ) microwave discharges of HI, CH3I, C2H5I, C3H7I and C2H3I. The InIx species are more volatile than their InClx counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional CH4/H2 mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with CH4/H2. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products.

Dependence of Intergranular Fracture on Boundary Topography and Cohesion

1973 ◽  
Vol 31 ◽  
pp. 150-151
Author(s):  
J. E. Doherty ◽  
A. F. Giamei ◽  
B. H. Kear ◽  
C. W. Steinke
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Nickel Base Superalloy ◽  
Boundary Shear ◽  
Room Temperature Ductility ◽  
Solid Solution Matrix ◽  
Nickel Base ◽  
Solution Matrix ◽  
Different Levels ◽  
Base Superalloy

Recently we have been investigating a class of nickel-base superalloys which possess substantial room temperature ductility. This improvement in ductility is directly related to improvements in grain boundary strength due to increased boundary cohesion through control of detrimental impurities and improved boundary shear strength by controlled grain boundary micros true tures.For these investigations an experimental nickel-base superalloy was doped with different levels of sulphur impurity. The micros tructure after a heat treatment of 1360°C for 2 hr, 1200°C for 16 hr consists of coherent precipitates of γ’ Ni3(Al,X) in a nickel solid solution matrix.

Hepatocyte Alterations in Guinea Pigs FED Polychlorinated Biphenyls (PCBs), Dibenzodioxins (PCDD), AND DIBENZOFURANS (PCDF)

1982 ◽  
Vol 40 ◽  
pp. 56-57
Author(s):  
J. N. Turner ◽  
D. N. Collins
Keyword(s):  
Guinea Pigs ◽  
Room Temperature ◽  
Dose Group ◽  
Methyl Cellulose ◽  
Uranyl Acetate ◽  
Target Organ ◽  
Office Building ◽  
Lead Citrate ◽  
Control Groups ◽  
Cooling Fluid

A fire involving an electric service transformer and its cooling fluid, a mixture of PCBs and chlorinated benzenes, contaminated an office building with a fine soot. Chemical analysis showed PCDDs and PCDFs including the highly toxic tetra isomers. Guinea pigs were chosen as an experimental animal to test the soot's toxicity because of their sensitivity to these compounds, and the liver was examined because it is a target organ. The soot was suspended in 0.75% methyl cellulose and administered in a single dose by gavage at levels of 1,10,100, and 500mgm soot/kgm body weight. Each dose group was composed of 6 males and 6 females. Control groups included 12 (6 male, 6 female) animals fed activated carbon in methyl cellulose, 6 males fed methyl cellulose, and 16 males and 10 females untreated. The guinea pigs were sacrificed at 42 days by suffocation in CO2. Liver samples were immediately immersed and minced in 2% gluteraldehyde in cacadylate buffer at pH 7.4 and 4°C. After overnight fixation, samples were postfixed in 1% OsO4 in cacodylate for 1 hr at room temperature, embedded in epon, sectioned and stained with uranyl acetate and lead citrate.

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