Iodine-Based dry Etching Chemistries for InP and Related Compounds

1992 ◽  
Vol 282 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. Katz ◽  
C. R. Abernathy ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dry Etching ◽  
Reaction Products ◽  
Ion Density ◽  
Sample Heating ◽  
Polymer Deposition ◽  
Etch Rates ◽  
Microwave Discharges ◽  
Related Compounds

ABSTRACTA comparison is given of the dry etching characteristics of InP and related materials in high ion density (>1011 cm−2 ) microwave discharges of HI, CH3I, C2H5I, C3H7I and C2H3I. The InIx species are more volatile than their InClx counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional CH4/H2 mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with CH4/H2. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products.

HI/H2 ECR Plasma Etching of III-V Semiconductors

1992 ◽  
Vol 268 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. Katz ◽  
F. Ren ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Dry Etching ◽  
Hydrogen Passivation ◽  
Near Surface ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Polymer Deposition ◽  
Etch Rates ◽  
Surface Morphologies

ABSTRACTHI/H2/Ar discharges are shown to be universal etchants for rn-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At loy dc self bia:s (-100V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000Å min−1 are possible for high HI percentages in the discharges, whereas rates greater than 1 Åm min−1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH4/H2/Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H2/Ar. Auger Electron Spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As i result, photoluminescence intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH4-based dry etching.

Ion-Enhanced Dry Etching of Magnetic Multilayers: Post-Etch Cleaning and Effects of UV Illumination

1999 ◽  
Vol 585 ◽  
Author(s):  
H. Cho ◽  
K. P. Lee ◽  
K. B. Jung ◽  
F. Sharifi ◽  
J. Marburger ◽  
...  
Keyword(s):  
Sample Surface ◽  
Magnetic Multilayers ◽  
Magnetic Multilayer ◽  
Reaction Products ◽  
Ion Milling ◽  
Ion Density ◽  
Long Term Stability ◽  
Uv Illumination ◽  
Micron Size ◽  
Etch Rates

AbstractPatterning of magnetic multilayer structures of the type used for MRAMs (e.g. NiFeCo/CoFe/Cu/CoFe/NiFeCo) is generally performed with ion milling, but this can degrade the coercivity of small (micron-size) MRAM elements and lead to sidewall redeposition. In high ion density reactive plasmas (Cl2/Ar) it is possible to produce ion-enhanced desorption of otherwise involatile halogenated reaction products, and achieve practical etch rates (∼600 Å/min) for the multilayers. However, removal of the chlorinated etch products from the feature sidewalls is critically important to avoid corrosion. We have used de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas for removal of these etch residues. Some slight degradation in magnetization was observed in O2 plasma treated structures, but the other cleaning procedures produced no change in magnetic properties and excellent long-term stability. UV illumination of the sample surface during etching is also found to enhance etch rates, as has been reported previously for room temperature etching of Cu.[1]

scholarly journals Dry Etching of III-V Nitrides

1995 ◽  
Vol 395 ◽  
Author(s):  
S. J. Pearton ◽  
R. J. Shul ◽  
G. F. McLane ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Dry Etching ◽  
Ion Density ◽  
Chemical Inertness ◽  
Order Of Magnitude ◽  
High Bond ◽  
Bond Strengths ◽  
Dc Bias ◽  
Etch Rates

ABSTRACTThe chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3×1011cm−3) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 109 cm−3 range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl2/CH4/H2/Ar, BCl3/Ar, Cl2/H2, C12/SF6, HBr/H2 and HI/H2 plasma chemistries achieving etch rates up to ∼4,000Å/min at moderate dc bias voltages (≤-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V’s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

Invited Paper Dry Etching Of Indium Phosphide At Room Temperature

1985 ◽  
Author(s):  
G. F. Doughty ◽  
C. L. Dargan ◽  
C. D. W. .. Wilkinson
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Dry Etching

On the Chemistry of Tetrabenzyl Thiuram Disulfide and Tetramethyl Thiuram Disulfide with Bis (Triethoxysilylpropyl) Tetrasulfide in Silica Compounds

2003 ◽  
Vol 76 (4) ◽  
pp. 876-891 ◽  
Author(s):  
R. N. Datta ◽  
A. G. Talma ◽  
S. Datta ◽  
P. G. J. Nieuwenhuis ◽  
W. J. Nijenhuis ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Succinic Anhydride ◽  
Dynamic Properties ◽  
The Other ◽  
Resonance Spectroscopy ◽  
Reaction Products ◽  
Negative Effect ◽  
Higher Temperature ◽  
Analytical Tools

Abstract The use of thiurams such as Tetramethyl thiuram disulfide (TMTD) or Tetrabenzyl thiuram disulfide (TBzTD) has been explored to achieve higher cure efficiency. The studies suggest that a clear difference exists between the effect of TMTD versus TBzTD. TMTD reacts with Bis (triethoxysilylpropyl) tetrasulfide (TESPT) and this reaction can take place even at room temperature. On the other hand, the reaction of TBzTD with TESPT is slow and takes place only at higher temperature. High Performance Liquid Chromatography (HPLC) with mass (MS) detection, Nuclear Magnetic Resonance Spectroscopy (NMR) and other analytical tools have been used to understand the differences between the reaction of TMTD and TESPT versus TBzTD and TESPT. The reaction products originating from these reactions are also identified. These studies indicate that unlike TMTD, TBzTD improves the cure efficiency allowing faster cure without significant effect on processing characteristics as well as dynamic properties. The loading of TESPT is reduced in a typical Green tire compound and the negative effect on viscosity is repaired by addition of anhydrides, such as succinic anhydride, maleic anhydride, etc.

scholarly journals Microstructure Features of Ternary Alkali-activated Binder Based on Tungsten Mining Waste, Slag and Metakaolin

2020 ◽  
Author(s):  
Naim Sedira ◽  
João Castro-Gomes
Keyword(s):  
Sodium Silicate ◽  
Room Temperature ◽  
Mining Waste ◽  
Dense Matrix ◽  
Microstructural Properties ◽  
Reaction Products ◽  
Granulated Blast Furnace Slag ◽  
Alkaline Activator ◽  
Furnace Slag ◽  
Alkali Activated

This study determines the effect of ground granulated blast furnace slag (GGBFS) and metakaolin (MK) on the microstructural properties of the tungsten mining waste-based alkali-activated binder (TMWM). During this investigation, TMWM was partially replaced with 10 wt.% GGBFS and 10 wt.% MK to improve the microstructure of the binder. In order to understand the effect of the substitutions on the microstructure, two pastes were produced to make a comparative study between the sample contain 100% TMWM and the ternary precursors. Both precursors were activated using a combination of alkaline activator solutions (sodium silicate and sodium hydroxide) with the ratio of 1:3 (66.6 wt.% sodium silicate combined with 33.33 wt.% of NaOH 8M). The alkali-activated mixes were cured in oven at temperature of 60 °C in the first day and at room temperature for the next 27 days. The reaction products N-A-S-H gel and (N,M)-A-S-H gel resulted from the alkaline activation reaction process. In addition, a formation of natrite (Na2CO3) with needles shape occurred as a reaction product of the fluorescence phenomena. However, a dense matrix resulted from the alkline activation of the ternary precursors containg different gels such as N-A-S-H, C-A-S-H and (N,M)-C-A-S-H gel, these results were obtained through SEM-EDS analyses, as well FTIR tests. Keywords: Mining Waste, Alkali-activated, Microstructure, Slag, Metakaolin

Sulfur Linkage in Vulcanized Rubber. Reaction of Methyl Iodide with Sulfur Compounds

1949 ◽  
Vol 22 (1) ◽  
pp. 1-7
Author(s):  
M. L. Selker
Keyword(s):  
Methyl Iodide ◽  
Room Temperature ◽  
Sulfur Compounds ◽  
Point Of View ◽  
Secondary Reaction ◽  
Reaction Products ◽  
Sulfide Sulfur ◽  
Vulcanized Rubber ◽  
Allyl Sulfide

Abstract The work described here is an extension of the study of the reaction of methyl iodide with sulfur compounds originally begun with the purpose of using such data in determining the sulfur linkage in vulcanized rubber. A previous paper dealt with the reactions of methyl iodide with propanethiol, propyl sulfide, propyl disulfide, allyl sulfide, and thiophene. This article adds to the list, n-butyl methallyl sulfide, allyl disulfide, allyl tetrasulfide, n-propyl tetrasulfide, and trithiane. The removal of combined sulfur from vulcanized rubber as trimethylsulfonium iodide on treatment with methyl iodide at room temperature was persuasive evidence of the presence of sulfide sulfur linked to allylic type residues. The evidence offered, however, did not constitute exclusive proof because it was not known whether still other types of sulfur linkage would also yield trimethylsulfonium iodide. To shed more light on this question, the sulfur linkages most likely to occur in vulcanizates—the allyl-alkyl monosulfide, diallyl and dialkyl di- and polysulfide—were investigated. The trithiane reaction is of interest mostly from the point of view of the reaction of overcured stocks or secondary reaction products stemming from the original polysulfides. The reactions were carried out using the method described in a previous paper.

The Reactivity of CaTi4(PO4)6 with Alumina and Y-TZP Ceramics

2007 ◽  
Vol 361-363 ◽  
pp. 787-790
Author(s):  
Sabina Beranič Klopčič ◽  
Irena Pribošič ◽  
Tomaž Kosmač ◽  
Ute Ploska ◽  
Georg Berger
Keyword(s):  
Room Temperature ◽  
Xrd Analysis ◽  
Second Phase ◽  
Reaction Products ◽  
Stabilized Zirconia ◽  
Monoclinic Zro2 ◽  
Commercial Alumina ◽  
The Matrix ◽  
Different Temperatures ◽  
Edx Analyses

The reactivity of CaTi4(PO4)6 (CTP) with alumina and yttria-stabilized zirconia (Y-TZP) ceramics was studied. CTP powder was synthesized and composites with commercial alumina or zirconia matrices containing 10 wt% of CTP were prepared. They were sintered at different temperatures and characterized using XRD, SEM, and EDX analyses. The results showed that the alumina/CTP and Y-TZP/CTP composites start to react below 1000 °C. In the alumina/CTP composite the first reaction product, detected at 970 °C, was AlPO4. At temperatures above 1280 °C TiO2 and CaTiO3 were also formed and no CTP peaks could be detected using XRD analysis. The composite sintered at 1500 °C consisted of Al2O3 matrix, AlPO4, TiO2, CaTiO3 and Al2TiO5. The reaction products formed in the Y-TZP/CTP composite at 970 °C were TiO2 and Ca2Zr7O16. At higher sintering temperatures, 1280 °C and above, CTP was no longer present, Ca2Zr7O16 decomposed, forming CaO2 and ZrO2, and Y2O3 was consumed to form YPO4. Consequently, upon cooling to room temperature the matrix phase transformed to monoclinic ZrO2. Based on these results it can be concluded that CTP is not a suitable bioactive second phase for the fabrication of CTP composites with alumina or zirconia matrices.

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