Invited Paper Dry Etching Of Indium Phosphide At Room Temperature

1985 ◽  
Author(s):  
G. F. Doughty ◽  
C. L. Dargan ◽  
C. D. W. .. Wilkinson
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Dry Etching

Dry etching of indium phosphide

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 803-806 ◽  
Author(s):  
GF Doughty ◽  
S Thoms ◽  
V Law ◽  
CDW Wilkinson
Keyword(s):  
Indium Phosphide ◽  
Dry Etching

Silicon dry etching profile control by RIE at room temperature for MEMS applications

2005 ◽  
Author(s):  
D. Vrtacnik ◽  
D. Resnik ◽  
U. Aljancic ◽  
M. Mozek ◽  
S. Amon
Keyword(s):  
Room Temperature ◽  
Dry Etching ◽  
Profile Control ◽  
Etching Profile

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
Jae-Won Lee ◽  
Hyong-Soo Park ◽  
Yong-Jo Park ◽  
Myong-Cheol Yoo ◽  
Tae-Il Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Ion Beam Etching ◽  
Etching Profile ◽  
Etching Parameters ◽  
Etching Selectivity ◽  
Reactive Ion Beam Etching

ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

Development of GaN and InGaN Gratings by Dry Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
J. W. Lee ◽  
J. Hong ◽  
J. D. Mackenzie ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dry Etching ◽  
Holographic Lithography ◽  
Periodic Gratings

ABSTRACTSub-micron periodic gratings with pitch ∼3,000Å were formed in GaN and InGaN using holographic lithography and room temperature ECR BCl3/N2 dry etching at moderate microwave (500W) and rf (100W) powers. The process produces uniform gratings without the need for elevated sample temperatures during the etch step.

scholarly journals Квантовые каскадные лазеры с длиной волны излучения 4.8 mum, работающие при комнатной температуре

2018 ◽  
Vol 44 (18) ◽  
pp. 17
Author(s):  
В.В. Мамутин ◽  
А.П. Васильев ◽  
А.В. Лютецкий ◽  
Н.Д. Ильинская ◽  
А.А. Усикова ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Molecular Beam ◽  
High Accuracy ◽  
High Quality ◽  
Quantum Cascade ◽  
Laser Heterostructures ◽  
Inp Substrate ◽  
Lattice Matched

AbstractWe report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 cascades and were designed to generate at the 4.80 μm wavelength corresponding to an atmospheric transparency window. Experiments demonstrated effective lasing at temperatures from 80 to 300 K on a wavelength coinciding with the calculated value, which confirmed the high quality of interfaces, high precision of layer thicknesses, and high accuracy of active region doping.

Accurate Dry Etching with Fluorinated Gas for Two-dimensional Si Photonic Crystal

2000 ◽  
Vol 637 ◽  
Author(s):  
Chiharu Takahashi ◽  
Jun-Ichi Takahashi ◽  
Masaya Notomi ◽  
Itaru Yokohama
Keyword(s):  
Photonic Crystal ◽  
Room Temperature ◽  
High Selectivity ◽  
Photonic Band Gap ◽  
Electronic Devices ◽  
Dry Etching ◽  
Two Dimensional ◽  
Ecr Plasma ◽  
Etching Mask ◽  
Photonic Band

AbstractAnisortopic Si dry etching is usually carried out with chlorinated gases for electronic devices such as Si-LSIs. We had another look at Si dry etching with fluorinated gases in order to obtain an ideal air hole for two-dimensional Si photonic crystal. We simulated vertical Si etching, and showed the possibility that single crystal Si can be etched vertically with high selectivity to the etching mask using fluorinated gases. We investigated ECR etching with an SF6-CF4 mixture, and vertical Si etching was achieved at room temperature. High Si/Ni selectivity above 100 was also obtained. Two-dimensional Si photonic crystal with a photonic band gap between 1.25 and 1.51 μm was produced using SF6-CF4 ECR plasma and a thin Ni mask.

High energy oxygen irradiation-induced defects in Fe-doped semi-insulating indium phosphide by positron annihilation technique

2017 ◽  
Vol 31 (04) ◽  
pp. 1750019
Author(s):  
S. Pan ◽  
A. Mandal ◽  
Md. A. Sohel ◽  
A. K. Saha ◽  
D. Das ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Positron Annihilation ◽  
Room Temperature ◽  
High Energy ◽  
Average Lifetime ◽  
Defect States ◽  
Positron Trapping ◽  
Radiation Induced ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation technique is applied to study the recovery of radiation-induced defects in 140 MeV oxygen (O[Formula: see text]) irradiated Fe-doped semi-insulating indium phosphide during annealing over a temperature region of 25[Formula: see text]C–650[Formula: see text]C. Lifetime spectra of the irradiated sample are fitted with three lifetime components. Trapping model analysis is used to characterize defect states corresponding to the de-convoluted lifetime values. After irradiation, the observed average lifetime of positron [Formula: see text] ps at room temperature is higher than the bulk lifetime by 21 ps which reveals the presence of radiation-induced defects in the material. A decrease in [Formula: see text] occurs during room temperature 25[Formula: see text]C to 200[Formula: see text]C indicating the dissociation of higher order defects, might be due to positron trapping in acceptor-type of defects ([Formula: see text]). A reverse annealing stage is found at temperature range of 250[Formula: see text]C–425[Formula: see text]C for [Formula: see text]-parameter probably due to the migration of vacancies and the formation of vacancy clusters. Increase in [Formula: see text]-parameter from 325[Formula: see text]C to 425[Formula: see text]C indicates the change in the nature of predominant positron trapping sites. Beyond 425[Formula: see text]C, [Formula: see text], [Formula: see text]-parameter and [Formula: see text]-parameter starts decreasing and around 650[Formula: see text]C, [Formula: see text] and [Formula: see text]-parameter approached almost the bulk value showing the annealing out of radiation-induced defects.

CBE Growth of InP with Triethylindium and Metalorganic Phosphorous Precursors: Bisphosphinoethane and Tertiarybutyl-Phosphine

1992 ◽  
Vol 282 ◽  
Author(s):  
Albert Chin ◽  
Steve Hersee ◽  
Paul Martin ◽  
John Mazurowski ◽  
James Ballingall ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Epitaxial Layers ◽  
Full Width ◽  
Half Maximum ◽  
Substrate Interface ◽  
Sims Analysis

ABSTRACTTwo metallorganic phosphorous precursors, bisphosphinoethane (BPE) and tertiarybutyl phosphine (TBP), were studied. For indium phosphide (InP) grown using BPE, the measured room temperature and 77K Hall mobilities were 4,200 and 22,000 cm2/Vs, with carrierdensities 5.7E15 and 4.0E15 cm−3, respectively. For InP grown using TBP, the measured room temperature and 77K Hall mobilities were 4,400 and 26,000 cm2/Vs, with carrier densities 6.4E15 and 5.1E15 cm−3, respectively. An impurity build-up at the substrate interface is responsible for the relatively low mobility in the adjacent epitaxial layers. SIMS analysis showed that S and Si are the primary impurities measured in films grown with BPE and TBP, respectively; impurity concentrations increasedwith cracking temperature. The full width at half maximum (FWHM) of donor bound exciton peaks measured by 2.2K photoluminescence for InP grown by BPE and TBP were 0.84 and 1.28 meV, respectively.

Formation of Long Wavelength InP Laser MESAS

1993 ◽  
Vol 300 ◽  
Author(s):  
F. Ren ◽  
S. J. Pearton ◽  
B. Tseng ◽  
J. R. Lothian ◽  
C. Constantine
Keyword(s):  
Elevated Temperature ◽  
Etch Rate ◽  
Room Temperature ◽  
Plasma Chemistry ◽  
Dry Etching ◽  
Pattern Transfer ◽  
Process Step ◽  
Long Wavelength ◽  
Low Degree ◽  
Etched Surface

ABSTRACTNarrow (1 μm), deep (3.5 μm) laser mesas have been formed on 2”φ InP wafers using stepper lithography and dry etching techniques for both dielectric and semiconductor patterning. Contrast enhancement techniques produce excellent edge acuity and vertical sidewalls on the initial photoresist lines. Pattern transfer to the underlying SiO2 regrowth mask is achieved by ECR SF6/Ar dry etching at 1 mTorr and –100V, conditions which also retain the verticality of the mesa. The semiconductor is etched using an ECR Cl2/CH4/H2/Ar discharge at 0.3 mTorr and –80V, with the sample held at ∼ 150°C. The etch rate under these conditions is ∼1 μm/min, with a selectivity of ≥10:1 for the semiconductor over the dielectric mask. The smooth etched surface and low degree of damage make this process ideal for epitaxial regrowth. The uniformity of each process step is also acceptable (≤7%). Comparison of the elevated temperature Cl2/CH4/H2/Ar mixture with the more conventional room temperature CH4/H2 plasma chemistry will be given.

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