Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Sub-Atmospheric Pressures

1997 ◽  
Vol 468 ◽  
Author(s):  
John C. Angus ◽  
Alberto Argoitia ◽  
Cliff C. Hayman ◽  
Long Wang ◽  
Jeffrey S. Dyck ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Indium Nitride ◽  
Photo Luminescence ◽  
Electron Cyclotron ◽  
Band Edge ◽  
Near Band Edge ◽  
Yellow Band ◽  
Pure Metals

ABSTRACTBulk, polycrystalline gallium nitride and indium nitride were crystallized at sub-atmospheric pressures by saturating the pure metals with nitrogen from a microwave electron cyclotron resonance source. Saturation of Ga/In melts with nitrogen led only to the crystallization of gallium nitride. The polycrystalline samples were wurtzitic. The gallium nitride was well faceted, with narrow Raman lineshapes, and showed near-band-edge and yellow band photo-luminescence at both 4K and 300K. The indium nitride was formed in smaller amounts, was less well faceted, and showed no photoluminescence.

Synthesis of Bulk, Polycrystalline Gallium Nitride at Low Pressures

1996 ◽  
Vol 449 ◽  
Author(s):  
Alberto Argoitia ◽  
John C. Angus ◽  
Cliff C. Hayman ◽  
Long Wang ◽  
Jeffrey S. Dyck ◽  
...  
Keyword(s):  
High Pressure ◽  
Gallium Nitride ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Molecular Nitrogen ◽  
Attractive Alternative ◽  
Near Band Edge ◽  
Atomic Nitrogen ◽  
Yellow Band ◽  
Low Pressures

ABSTRACTBulk, polycrystalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photoluminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.

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