Synthesis of Bulk, Polycrystalline Gallium Nitride at Low Pressures

1996 ◽  
Vol 449 ◽  
Author(s):  
Alberto Argoitia ◽  
John C. Angus ◽  
Cliff C. Hayman ◽  
Long Wang ◽  
Jeffrey S. Dyck ◽  
...  
Keyword(s):  
High Pressure ◽  
Gallium Nitride ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Molecular Nitrogen ◽  
Attractive Alternative ◽  
Near Band Edge ◽  
Atomic Nitrogen ◽  
Yellow Band ◽  
Low Pressures

ABSTRACTBulk, polycrystalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photoluminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.

Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Sub-Atmospheric Pressures

1997 ◽  
Vol 468 ◽  
Author(s):  
John C. Angus ◽  
Alberto Argoitia ◽  
Cliff C. Hayman ◽  
Long Wang ◽  
Jeffrey S. Dyck ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Indium Nitride ◽  
Photo Luminescence ◽  
Electron Cyclotron ◽  
Band Edge ◽  
Near Band Edge ◽  
Yellow Band ◽  
Pure Metals

ABSTRACTBulk, polycrystalline gallium nitride and indium nitride were crystallized at sub-atmospheric pressures by saturating the pure metals with nitrogen from a microwave electron cyclotron resonance source. Saturation of Ga/In melts with nitrogen led only to the crystallization of gallium nitride. The polycrystalline samples were wurtzitic. The gallium nitride was well faceted, with narrow Raman lineshapes, and showed near-band-edge and yellow band photo-luminescence at both 4K and 300K. The indium nitride was formed in smaller amounts, was less well faceted, and showed no photoluminescence.

Deposition of Diamond using an Electron Cyclotron Resonance Plasma System

1994 ◽  
Vol 339 ◽  
Author(s):  
Donald R. Gilbert ◽  
Rajiv Singh ◽  
W. Brock Alexander ◽  
Dong Gu Lee ◽  
Patrick Doering
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma System ◽  
Electron Cyclotron Resonance Plasma ◽  
Ecr Plasma ◽  
Low Pressures ◽  
Substrate Temperatures ◽  
Resonance Plasma

ABSTRACTWe have used an electron cyclotron resonance plasma system to perform chemical vapor deposition experiments on single-crystal, (110) oriented diamond substrates. The depositions were carried out at 0.060 Torr using mixtures of methanol in hydrogen. Substrate temperatures were varied from approximately 620 to 800 °C The film morphology was examined using SEM and microstructural phase determination was attempted using micro-Raman spectroscopy. Based on the results of these experiments, we have determined general trends for the characteristics of films deposited on diamond from the ECR plasma at low pressures and temperatures.

scholarly journals Growth of Oriented Thick Films of Gallium Nitride from the Melt

1999 ◽  
Vol 4 (S1) ◽  
pp. 227-232 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Kathleen Kash ◽  
Michael T. Grossner ◽  
Cliff C. Hayman ◽  
Alberto Argoitia ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Microwave Plasma ◽  
Thick Films ◽  
Attractive Alternative ◽  
Plasma Synthesis ◽  
Atomic Nitrogen ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
X Ray

While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 1010 cm−2. The E2 Raman active phonon modes were observed in the GaN films.

The Current Status of Development and Applications of Wave-Heated Discharge Plasma Sources

2014 ◽  
Vol 1006-1007 ◽  
pp. 193-199 ◽  
Author(s):  
Ming Lu Cao ◽  
Jia Cheng ◽  
Chuan Kun Han ◽  
Lin Hong Ji
Keyword(s):  
Cyclotron Resonance ◽  
High Efficiency ◽  
Electron Cyclotron Resonance ◽  
Discharge Plasma ◽  
Current Status ◽  
Plasma Sources ◽  
Helicon Wave ◽  
Microelectronics Industry ◽  
Low Pressures ◽  
Resonance Plasma

Wave-heated discharges are well known as high-efficiency methods to generate high-density plasma at low pressures. In this paper, three types of plasma sources based on different wave-heated discharge principles are introduced systematically. Electron cyclotron resonance plasma, helicon wave plasma, and surface wave plasma systems are promising to be the next generation of plasma sources to meet increasingly strict requirements in microelectronics industry due to their remarkable advantages over conventional plasma sources.

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