Characteristics of a mesh-bias-controlled electron cyclotron resonance plasma for the growth of gallium nitride epitaxial films

K. Yasui; K. Iizuka; T. Akahane

doi:10.1116/1.581007

Characteristics of a mesh-bias-controlled electron cyclotron resonance plasma for the growth of gallium nitride epitaxial films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581007 ◽

1998 ◽

Vol 16 (1) ◽

pp. 369-374 ◽

Cited By ~ 2

Author(s):

K. Yasui ◽

K. Iizuka ◽

T. Akahane

Keyword(s):

Gallium Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Epitaxial Films ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Extensive Control of Plasma Parameters in the Afterglow Region of Electron-Cyclotron-Resonance Plasma for the Epitaxial Growth of Cubic Gallium Nitride

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4329 ◽

1999 ◽

Vol 38 (Part 1, No. 7B) ◽

pp. 4329-4332 ◽

Cited By ~ 1

Author(s):

Kanji Yasui ◽

Masaaki Kikuchi ◽

Atushi Uwabachi ◽

Tadashi Akahane

Keyword(s):

Gallium Nitride ◽

Epitaxial Growth ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Parameters ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species

Journal of Applied Physics ◽

10.1063/1.357293 ◽

1994 ◽

Vol 76 (8) ◽

pp. 4587-4595 ◽

Cited By ~ 108

Author(s):

R. J. Molnar ◽

T. D. Moustakas

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Charged Species ◽

Resonance Plasma

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Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80072-k ◽

1995 ◽

Vol 150 ◽

pp. 912-915 ◽

Cited By ~ 17

Author(s):

D.B. Oberman ◽

H. Lee ◽

W.K. Götz ◽

J.S. Harris

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Hydrogen Azide ◽

Resonance Plasma

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Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

Applied Physics Letters ◽

10.1063/1.102487 ◽

1990 ◽

Vol 56 (15) ◽

pp. 1424-1426 ◽

Cited By ~ 52

Author(s):

S. J. Pearton ◽

U. K. Chakrabarti ◽

A. P. Kinsella ◽

D. Johnson ◽

C. Constantine

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effect of nitrogen flow on the properties of carbon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Vacuum ◽

10.1016/j.vacuum.2021.110223 ◽

2021 ◽

pp. 110223

Author(s):

Sixu Lin ◽

Dong Xie ◽

Yongliang Tang ◽

Yiwen Wang ◽

Fengjuan Jing ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Nitrogen Flow ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001)

Applied Surface Science ◽

10.1016/0169-4332(93)90239-8 ◽

1993 ◽

Vol 68 (4) ◽

pp. 575-582 ◽

Cited By ~ 20

Author(s):

M. Diani ◽

J.L. Bischoff ◽

L. Kubler ◽

D. Bolmont

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

X Ray ◽

Photoelectron Diffraction ◽

Resonance Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Cited By ~ 20

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

Applied Physics Letters ◽

10.1063/1.114847 ◽

1995 ◽

Vol 67 (20) ◽

pp. 2934-2935 ◽

Cited By ~ 19

Author(s):

A. Weber ◽

R. Poeckelmann ◽

C.‐P. Klages

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Process ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low-damage electron-beam-assisted dry etching of GaAs and AlGaAs using electron cyclotron resonance plasma electron source

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586892 ◽

1993 ◽

Vol 11 (6) ◽

pp. 2288 ◽

Cited By ~ 4

Author(s):

Heiji Watanabe

Keyword(s):

Electron Beam ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Dry Etching ◽

Plasma Electron ◽

Electron Source ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Electron Source ◽

Resonance Plasma

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c-Axis oriented AlN films prepared on diamond film substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)01810-3 ◽

2002 ◽

Vol 235 (1-4) ◽

pp. 333-339 ◽

Cited By ~ 7

Author(s):

H Gong ◽

X Jiang

Keyword(s):

Chemical Vapor Deposition ◽

Diamond Film ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Film Substrate ◽

Resonance Plasma

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