Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

R. J. Molnar; R. Singh; T. D. Moustakas

doi:10.1063/1.113513

Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.113513 ◽

1995 ◽

Vol 66 (3) ◽

pp. 268-270 ◽

Cited By ~ 133

Author(s):

R. J. Molnar ◽

R. Singh ◽

T. D. Moustakas

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Light Emitting ◽

Violet Light

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Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.353870 ◽

1993 ◽

Vol 73 (1) ◽

pp. 448-455 ◽

Cited By ~ 82

Author(s):

C. R. Eddy ◽

T. D. Moustakas ◽

J. Scanlon

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Resonance Microwave

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Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species

Journal of Applied Physics ◽

10.1063/1.357293 ◽

1994 ◽

Vol 76 (8) ◽

pp. 4587-4595 ◽

Cited By ~ 108

Author(s):

R. J. Molnar ◽

T. D. Moustakas

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Charged Species ◽

Resonance Plasma

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Operation of a compact electron cyclotron resonance source for the growth of gallium nitride by molecular beam epitaxy (ECR-MBE)

Journal of Electronic Materials ◽

10.1007/bf02659687 ◽

1995 ◽

Vol 24 (4) ◽

pp. 275-281 ◽

Cited By ~ 42

Author(s):

R. J. Molnar ◽

R. Singh ◽

T. D. Moustakas

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron

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Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80072-k ◽

1995 ◽

Vol 150 ◽

pp. 912-915 ◽

Cited By ~ 17

Author(s):

D.B. Oberman ◽

H. Lee ◽

W.K. Götz ◽

J.S. Harris

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Hydrogen Azide ◽

Resonance Plasma

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Single-Crystalline ZnO Films Grown on (0001)Al2O3 Substrate by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l933 ◽

1997 ◽

Vol 36 (Part 2, No. 7B) ◽

pp. L933-L935 ◽

Cited By ~ 24

Author(s):

Hee-Bog Kang ◽

Kiyoshi Nakamura ◽

Kenji Yoshida ◽

Kazuo Ishikawa

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Zno Films ◽

Al2o3 Substrate ◽

Single Crystalline

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Si1−x−yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00802-9 ◽

2002 ◽

Vol 89 (1-3) ◽

pp. 296-302 ◽

Cited By ~ 8

Author(s):

J.-M Baribeau ◽

D.J Lockwood ◽

J Balle ◽

S.J Rolfe ◽

G.I Sproule

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.1450255 ◽

2002 ◽

Vol 80 (6) ◽

pp. 968-970 ◽

Cited By ~ 58

Author(s):

Tokuo Yodo ◽

Hiroaki Yona ◽

Hironori Ando ◽

Daiki Nosei ◽

Yoshiyuki Harada

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Band Edge ◽

Si Substrates ◽

Strong Band ◽

Edge Luminescence ◽

Band Edge Luminescence

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Photoluminescence of Undoped GaN Grown on c-Plane $\bf Al_{2}O_{3}$ by Electron Cyclotron Resonance Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1575 ◽

1995 ◽

Vol 34 (Part 2, No. 12A) ◽

pp. L1575-L1578 ◽

Cited By ~ 12

Author(s):

Sung Hwan Cho ◽

Takahiro Maruyama ◽

Katsuhiro Akimoto

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron

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Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment

Review of Scientific Instruments ◽

10.1063/1.1141371 ◽

1990 ◽

Vol 61 (9) ◽

pp. 2407-2411 ◽

Cited By ~ 50

Author(s):

Z. Sitar ◽

M. J. Paisley ◽

D. K. Smith ◽

R. F. Davis

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Plasma Source ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

And Performance ◽

Resonance Plasma

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Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105221 ◽

1991 ◽

Vol 58 (6) ◽

pp. 604-606 ◽

Cited By ~ 4

Author(s):

Norio Yamamoto ◽

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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