Activation of Acceptors in Mg-Doped, p-Type GaN

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Götz ◽  
N. M. Johnson ◽  
J. Walker ◽  
D. P. Bour
Keyword(s):  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Metalorganic Chemical Vapor Deposition ◽  
Variable Temperature ◽  
Chemical Vapor ◽  
Hall Effect Measurements ◽  
P Type ◽  
Heteroepitaxial Layers ◽  
Plasma Hydrogenation ◽  
Mg Doped

AbstractThe activation of acceptors was investigated for Mg-doped, heteroepitaxial layers of GaN grown by metalorganic chemical vapor deposition. After growth the samples were exposed to isochronal rapid thermal anneals in the temperature range from 500°C to 775°C. The samples were studied by variable temperature Hall effect measurements and photoluminescence (PL) spectroscopy in the as-grown condition and after each temperature step. The thermal treatment leads to the formation of acceptors which are characterized by an activation energy for ionization in the range between 165 meV and 182 meV. These acceptors are attributed to Mg atoms substituting for Ga in the GaN lattice. The experimental results for the acceptor activation are consistent with the dissociation of electrically inactive acceptor-hydrogen complexes. The reversibility of this process is investigated by the exposure of the activated, p-type GaN samples to atomic hydrogen in a remote-plasma hydrogenation system at 600°C and reactivating at 850°C.

Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 631-634 ◽  
Author(s):  
Doo-Hyeb Youn ◽  
Mohamed Lachab ◽  
Maosheng Hao ◽  
Tomoya Sugahara ◽  
Hironori Takenaka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Activation Mechanism ◽  
P Type ◽  
Metalorganic Chemical ◽  
Mg Doped

AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates

1995 ◽  
Vol 395 ◽  
Author(s):  
Hua-Shuang Kong ◽  
Michelle Leonard ◽  
Gary Bulman ◽  
Gerry Negley ◽  
John Edmond
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Color ◽  
Deep Blue ◽  
Double Heterojunction ◽  
Si Doped ◽  
P Type ◽  
Peak Emission ◽  
Mg Doped

ABSTRACTBlue LEDs with double-heterojunction (DH) have been produced in AIN-GaN system grown on n-type 6H-SiC substrates via metalorganic chemical vapor deposition (MOCVD). These devices employ a GaN active layer bordered by Mg doped p-type Al0.1Ga0.9N and Si doped n-type Al0.1Ga0.9N. A vertical device design was utilized with a p-type Au contact centered on the chip top side for wire bonding. The backside contact to the SiC is Ni. The peak emission from these devices is 430 nm with a FWHM of 65 nm, producing a deep blue color. The output power is 1.7 mW at 20 mA which corresponds to an external quantum efficiency of 3%.

The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Yixin Jin ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Long Wavelength ◽  
Measurement Results ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

GROWTH AND CHARACTERIZATION OF p-Type GaAs LAYERS USING ATOMIC HYDROGEN AS A REAGENT

2001 ◽  
Vol 15 (17n19) ◽  
pp. 809-812 ◽  
Author(s):  
F. SILVA-ANDRADE ◽  
F. CHÁVEZ ◽  
F. TENORIO ◽  
N. MORALES ◽  
J. I. BECERRA PONCE DE LEON ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Conductivity Type ◽  
Technological Field ◽  
Vapor Deposition Technique ◽  
P Type ◽  
Residual Impurities

Atomic hydrogen has been found to have a great number of useful applications in the technological field of semiconducting materials. It has been used as a reagent in the epitaxial growth processes to control the incorporation of residual impurities. Atomic hydrogen can react with GaAs thus producing Ga- and As- hydrogen volatile species in controlled conditions. The atomic hydrogen can be produced in a chemical vapor deposition chamber using a hot tungsten filament. In this work we report the results of a study on GaAs layers grown using the close space vapor deposition technique with atomic hydrogen as a reagent. The conductivity type of the grown layers is closely related to the conductivity type of the GaAs source. We have grown p-type GaAs layers with l×1018 cm-3 hole concentration using GaAs sources with the same acceptor concentration. 10 K photoluminesence measurements were nlade on the source and the epitaxial GaAs layers. The PL spectra revealed that the residual impurities in the GaAs layers were originated from the source. The mirror like appearance of the grown layers as well as their electrical and optical characteristics demonstrate they can be used in the manufacture of GaAs semiconductor devices.

Sign in / Sign up

Export Citation Format

Share Document