An ODMR Study of The Killer Center Fe in GaP:O

1985 ◽  
Vol 46 ◽  
Author(s):  
K. M. Lee ◽  
L. C. Kimerling ◽  
M. D. Sturge
Keyword(s):  
Excited State ◽  
Magnetic Resonance ◽  
Acceptor Pair ◽  
Resonance Technique ◽  
Magnetic Resonance Technique ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
Killing Action

AbstractThe role of the luminescence killer center iron in GaP has been studied by the optically detected magnetic resonance technique. Observations of strong Fe°(3d5) and O0 resonance in the (Zn,O) donor-acceptor pair (DAP) and the 0.841 eV electron capture (EC) luminescence bands show that the luminescence killing action is via (Fe,O) DAP recombination.Two distinct but similar (Fe,O) DAP processes were detected: The (Fe0,O0) process with a slower recombination rate and (Fe0,O0*) process, with a faster effective relaxation rate, involving the oxygen excited state.

Observation of the Ga Self-Interstitial Defect in GaP

1987 ◽  
Vol 104 ◽  
Author(s):  
K. M. Lee
Keyword(s):  
Magnetic Resonance ◽  
Resonance Spectrum ◽  
Acceptor Pair ◽  
Capture Process ◽  
Interstitial Defect ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
Hyperfine Splittings ◽  
Theoretical Considerations

ABSTRACTThe first experimental evidence of an isolated self-interstitial defect in an as-grown semiconductor is reported. An optically detected magnetic resonance spectrum observed in GaP [0] was identified as arising from a Ga selfinterstitial. The large isotropic hyperfine splittings (g = 2.003 (3), A(69Ga) = 741(5)×10−4 cm−1 and A(71Ga) -941[5]×10− 4 cm−1) revealed that a single Ga atom at a Td-symmetric site is the center of the defect. The interstitial nature is established by theoretical considerations. The spin dependent recombination process is attributed to a non-radiative donor-acceptor-pair process involving the Ga++ state which is in competition with a radiative (Odeg; - A° ) pair process and an electron capture process at O-donor.

Optically Detected Magnetic Resonance of Donors in AlxGa1−x as with High AlAs Fraction

1987 ◽  
Vol 104 ◽  
Author(s):  
T. A. Kennedy ◽  
R. Magno ◽  
E. Glaser ◽  
M. G. Spencer
Keyword(s):  
Magnetic Resonance ◽  
Acceptor Pair ◽  
High Quality ◽  
Shallow Acceptor ◽  
Optically Detected Magnetic Resonance ◽  
Donor Acceptor ◽  
Optical And Magnetic Properties ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
High Quality Sample

ABSTRACTOptical and magnetic properties of donors in high AlAs-fraction AlxGa1−x As have been determined using optically-detected magnetic resonance. Many samples exhibit a sharp resonance at g = 1.95 detected on midgap luminescence. One high-quality sample exhibits an exhange-broadened line which reveals a distribution in donor-acceptor pair separations on moderately deep emission. A second high-quality sample exhibits the donor ODMR on donor-to-shallow- acceptor photoluminescence.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Modified Optically Detected Magnetic Resonance Technique for Studies of Defects in Si and GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
W.M. Chen ◽  
B. Monemar
Keyword(s):  
Magnetic Resonance ◽  
Free Carrier ◽  
Background Signal ◽  
Resonance Technique ◽  
Magnetic Resonance Technique ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

AbstractWe discuss one of the major difficulties, namely the strong free carrier induced background signal, in studies of defects in Si and GaAs by optically detected magnetic resonance (ODMR) technique. A modified ODMR technique, namely delayed ODMR, is presented and is shown to be very successful in overcoming this difficulty.

Radiative Recombination in Cadmium Sulfide

1972 ◽  
Vol 50 (13) ◽  
pp. 1518-1538 ◽  
Author(s):  
K. Colbow ◽  
K. Yuen
Keyword(s):  
Concentration Quenching ◽  
Conductivity Measurements ◽  
Edge Emission ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
High Concentrations ◽  
Luminescent Centers ◽  
Bound Electron

Luminescent centers involving Ag impurities were introduced into CdS single crystals through doping with 109Cd radioisotopes. Thus, the Ag concentration increases with time as more 109Cd decays. This enables a study of photoluminescence versus Ag concentration in a given crystal without changing the concentrations of other impurities.A new emission band at 5600 Å results in addition to the 6100 Å band present in Ag-doped crystals using conventional techniques. This new emission is quenched with increasing Ag concentration at high concentrations. Also concentration quenching by the Ag impurities occurs for the green edge, and the bound-exciton emissions I1, and I2. The quenching is explained by assuming a donor–acceptor recombination process.The new emission probably arises from the recombination of a bound electron with a bound hole at a distant donor–acceptor pair, with Ag as the acceptor. The acceptor role of Ag is supported by electrical conductivity measurements on 109Cd-doped crystals. Estimates are obtained for the acceptor binding energy, the donor concentrations, and the separations of pairs responsible for the new 5600 Å emission and the green-edge emission. The 6100 Å emission is attributed to Ag closely associated with other impurities. These conclusions are verified by our temperature annealing and quenching experiments.

Donor-Acceptor Pair Recombination Involving the First Excited State of a Donor in GaAs

1968 ◽  
Vol 176 (3) ◽  
pp. 938-942 ◽  
Author(s):  
Jagdeep Shah ◽  
R. C. C. Leite ◽  
J. P. Gordon
Keyword(s):  
Excited State ◽  
Acceptor Pair ◽  
First Excited State ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Role of solvent dynamics in the charge recombination of a donor/acceptor pair

1992 ◽  
Vol 114 (9) ◽  
pp. 3564-3565 ◽  
Author(s):  
Jeffrey M. Zaleski ◽  
Chi K. Chang ◽  
George E. Leroi ◽  
Robert I. Cukier ◽  
Daniel G. Nocera
Keyword(s):  
Charge Recombination ◽  
Acceptor Pair ◽  
Solvent Dynamics ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Role Of Solvent

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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