Observation of the Ga Self-Interstitial Defect in GaP

1987 ◽  
Vol 104 ◽  
Author(s):  
K. M. Lee
Keyword(s):  
Magnetic Resonance ◽  
Resonance Spectrum ◽  
Acceptor Pair ◽  
Capture Process ◽  
Interstitial Defect ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
Hyperfine Splittings ◽  
Theoretical Considerations

ABSTRACTThe first experimental evidence of an isolated self-interstitial defect in an as-grown semiconductor is reported. An optically detected magnetic resonance spectrum observed in GaP [0] was identified as arising from a Ga selfinterstitial. The large isotropic hyperfine splittings (g = 2.003 (3), A(69Ga) = 741(5)×10−4 cm−1 and A(71Ga) -941[5]×10− 4 cm−1) revealed that a single Ga atom at a Td-symmetric site is the center of the defect. The interstitial nature is established by theoretical considerations. The spin dependent recombination process is attributed to a non-radiative donor-acceptor-pair process involving the Ga++ state which is in competition with a radiative (Odeg; - A° ) pair process and an electron capture process at O-donor.

An ODMR Study of The Killer Center Fe in GaP:O

1985 ◽  
Vol 46 ◽  
Author(s):  
K. M. Lee ◽  
L. C. Kimerling ◽  
M. D. Sturge
Keyword(s):  
Excited State ◽  
Magnetic Resonance ◽  
Acceptor Pair ◽  
Resonance Technique ◽  
Magnetic Resonance Technique ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
Killing Action

AbstractThe role of the luminescence killer center iron in GaP has been studied by the optically detected magnetic resonance technique. Observations of strong Fe°(3d5) and O0 resonance in the (Zn,O) donor-acceptor pair (DAP) and the 0.841 eV electron capture (EC) luminescence bands show that the luminescence killing action is via (Fe,O) DAP recombination.Two distinct but similar (Fe,O) DAP processes were detected: The (Fe0,O0) process with a slower recombination rate and (Fe0,O0*) process, with a faster effective relaxation rate, involving the oxygen excited state.

Optically Detected Magnetic Resonance of Donors in AlxGa1−x as with High AlAs Fraction

1987 ◽  
Vol 104 ◽  
Author(s):  
T. A. Kennedy ◽  
R. Magno ◽  
E. Glaser ◽  
M. G. Spencer
Keyword(s):  
Magnetic Resonance ◽  
Acceptor Pair ◽  
High Quality ◽  
Shallow Acceptor ◽  
Optically Detected Magnetic Resonance ◽  
Donor Acceptor ◽  
Optical And Magnetic Properties ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
High Quality Sample

ABSTRACTOptical and magnetic properties of donors in high AlAs-fraction AlxGa1−x As have been determined using optically-detected magnetic resonance. Many samples exhibit a sharp resonance at g = 1.95 detected on midgap luminescence. One high-quality sample exhibits an exhange-broadened line which reveals a distribution in donor-acceptor pair separations on moderately deep emission. A second high-quality sample exhibits the donor ODMR on donor-to-shallow- acceptor photoluminescence.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Photoassociation due to electron transfer. Exciplex formation in non-polar solvent

1971 ◽  
Vol 24 (9) ◽  
pp. 1797 ◽  
Author(s):  
RJ McDonald ◽  
BK Selinger
Keyword(s):  
Polar Solvent ◽  
Excitation Energy Transfer ◽  
Acceptor Pair ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Exciplex Formation ◽  
Reversible Dissociation ◽  
Fluorescence Excitation Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Exciplexes may be formed by exciting either partner of a given electron donor-acceptor pair. As the formation of such exciplexes is reversible, dissociation may lead to excitation energy transfer. ��� The temperature dependence of fluorescence excitation spectra has proved to be a powerful tool for exploring these systems.

scholarly journals Non-radiative coupled donor-acceptor pair recombination in nanostructures based on nitrides and related phenomena

2018 ◽  
Vol 1124 ◽  
pp. 041023
Author(s):  
N A Talnishnikh ◽  
E I Shabunina ◽  
N M Shmidt ◽  
A E Chernyakov ◽  
D S Arteev ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair
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