Role of solvent dynamics in the charge recombination of a donor/acceptor pair

1992 ◽  
Vol 114 (9) ◽  
pp. 3564-3565 ◽  
Author(s):  
Jeffrey M. Zaleski ◽  
Chi K. Chang ◽  
George E. Leroi ◽  
Robert I. Cukier ◽  
Daniel G. Nocera
Keyword(s):  
Charge Recombination ◽  
Acceptor Pair ◽  
Solvent Dynamics ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Role Of Solvent

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Radiative Recombination in Cadmium Sulfide

1972 ◽  
Vol 50 (13) ◽  
pp. 1518-1538 ◽  
Author(s):  
K. Colbow ◽  
K. Yuen
Keyword(s):  
Concentration Quenching ◽  
Conductivity Measurements ◽  
Edge Emission ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
High Concentrations ◽  
Luminescent Centers ◽  
Bound Electron

Luminescent centers involving Ag impurities were introduced into CdS single crystals through doping with 109Cd radioisotopes. Thus, the Ag concentration increases with time as more 109Cd decays. This enables a study of photoluminescence versus Ag concentration in a given crystal without changing the concentrations of other impurities.A new emission band at 5600 Å results in addition to the 6100 Å band present in Ag-doped crystals using conventional techniques. This new emission is quenched with increasing Ag concentration at high concentrations. Also concentration quenching by the Ag impurities occurs for the green edge, and the bound-exciton emissions I1, and I2. The quenching is explained by assuming a donor–acceptor recombination process.The new emission probably arises from the recombination of a bound electron with a bound hole at a distant donor–acceptor pair, with Ag as the acceptor. The acceptor role of Ag is supported by electrical conductivity measurements on 109Cd-doped crystals. Estimates are obtained for the acceptor binding energy, the donor concentrations, and the separations of pairs responsible for the new 5600 Å emission and the green-edge emission. The 6100 Å emission is attributed to Ag closely associated with other impurities. These conclusions are verified by our temperature annealing and quenching experiments.

An ODMR Study of The Killer Center Fe in GaP:O

1985 ◽  
Vol 46 ◽  
Author(s):  
K. M. Lee ◽  
L. C. Kimerling ◽  
M. D. Sturge
Keyword(s):  
Excited State ◽  
Magnetic Resonance ◽  
Acceptor Pair ◽  
Resonance Technique ◽  
Magnetic Resonance Technique ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
Killing Action

AbstractThe role of the luminescence killer center iron in GaP has been studied by the optically detected magnetic resonance technique. Observations of strong Fe°(3d5) and O0 resonance in the (Zn,O) donor-acceptor pair (DAP) and the 0.841 eV electron capture (EC) luminescence bands show that the luminescence killing action is via (Fe,O) DAP recombination.Two distinct but similar (Fe,O) DAP processes were detected: The (Fe0,O0) process with a slower recombination rate and (Fe0,O0*) process, with a faster effective relaxation rate, involving the oxygen excited state.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

Photoassociation due to electron transfer. Exciplex formation in non-polar solvent

1971 ◽  
Vol 24 (9) ◽  
pp. 1797 ◽  
Author(s):  
RJ McDonald ◽  
BK Selinger
Keyword(s):  
Polar Solvent ◽  
Excitation Energy Transfer ◽  
Acceptor Pair ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Exciplex Formation ◽  
Reversible Dissociation ◽  
Fluorescence Excitation Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Exciplexes may be formed by exciting either partner of a given electron donor-acceptor pair. As the formation of such exciplexes is reversible, dissociation may lead to excitation energy transfer. ��� The temperature dependence of fluorescence excitation spectra has proved to be a powerful tool for exploring these systems.

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