Modified Optically Detected Magnetic Resonance Technique for Studies of Defects in Si and GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
W.M. Chen ◽  
B. Monemar

AbstractWe discuss one of the major difficulties, namely the strong free carrier induced background signal, in studies of defects in Si and GaAs by optically detected magnetic resonance (ODMR) technique. A modified ODMR technique, namely delayed ODMR, is presented and is shown to be very successful in overcoming this difficulty.

1985 ◽  
Vol 46 ◽  
Author(s):  
K. M. Lee ◽  
L. C. Kimerling ◽  
M. D. Sturge

AbstractThe role of the luminescence killer center iron in GaP has been studied by the optically detected magnetic resonance technique. Observations of strong Fe°(3d5) and O0 resonance in the (Zn,O) donor-acceptor pair (DAP) and the 0.841 eV electron capture (EC) luminescence bands show that the luminescence killing action is via (Fe,O) DAP recombination.Two distinct but similar (Fe,O) DAP processes were detected: The (Fe0,O0) process with a slower recombination rate and (Fe0,O0*) process, with a faster effective relaxation rate, involving the oxygen excited state.


1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.


1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke

1997 ◽  
Vol 6 (10) ◽  
pp. 1381-1384 ◽  
Author(s):  
N.T. Son ◽  
E. Sörman ◽  
W.M. Chen ◽  
C. Hallin ◽  
O. Kordina ◽  
...  

1992 ◽  
Vol 270 ◽  
Author(s):  
P. A. Lane ◽  
L. S. Swanson ◽  
Q.-X. Ni ◽  
J. Shinar ◽  
J Engel ◽  
...  

ABSTRACTThe photoluminescence (PL), X-band ODMR. and LESR of C60 films and C60 isolated in a toluene/polystyrene glass matrix (C60:T/PS) is described. The delocalized triplet LESR and ODMR of C60:T/PS are similar to previously reported LESR. In films, however, the ODMR indicates that the delocalized triplet is larger and distorted by neighboring molecules. In addition, another, localized triplet, and a narrow PL-enhancing line at g = 2.0017 ± 0.0005 are observed. These features are similar to those observed in several π-conjugated polymers. The former is attributed to a localized triplet of size similar to a 5- or 6-membered ring, tentatively on a face adjacent to another C60 molecule; the latter is believed to result from intermolecular polaron recombination.


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