Modified Optically Detected Magnetic Resonance Technique for Studies of Defects in Si and GaAs
Keyword(s):
AbstractWe discuss one of the major difficulties, namely the strong free carrier induced background signal, in studies of defects in Si and GaAs by optically detected magnetic resonance (ODMR) technique. A modified ODMR technique, namely delayed ODMR, is presented and is shown to be very successful in overcoming this difficulty.
1989 ◽
Vol 39
(15)
◽
pp. 11195-11198
◽
2018 ◽
Vol 9
(1)
◽
pp. 13-20
1972 ◽
Vol 57
(3)
◽
pp. 1050-1065
◽
1997 ◽
Vol 6
(10)
◽
pp. 1381-1384
◽