Photoluminescence Study of p-ZnGeP2 Crystals

1996 ◽  
Vol 450 ◽  
Author(s):  
Yurri V. Rud ◽  
Vasilii Yu ◽  
M. C. Ohmer ◽  
P. G. Shunemann
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Room Temperature ◽  
Directed Crystallization ◽  
Acceptor Pair ◽  
Long Wavelength ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Nonlinear Devices ◽  
Conversion Efficiencies

ABSTRACTPhotoluminescence (PL) steady-state spectra of p-ZnGeP2 (ZGP) single crystals grown by high- and low-temperature directed crystallization have been investigated. It is determined that the long-wavelength component PL with a maximum in the interval 1.2–1.5 eV for different crystals quenched in the temperature range 77–300 K. The long-wavelength component PL are due to donor-acceptor pair transitions. At room temperature the short-wavelength PL with a maximum near 1.85 eV becomes the determining component. The nature of this band discussed. The use of low-temperature directed crystallization reduces the concentration of lattice defects in ZGP single crystals and opens up the new possibilities for increasing the conversion efficiencies of nonlinear devices.

scholarly journals Donor-acceptor pair recombination in AgIn5S8 single crystals

1999 ◽  
Vol 85 (6) ◽  
pp. 3198-3201 ◽  
Author(s):  
N. M. Gasanly ◽  
A. Serpengüzel ◽  
A. Aydinli ◽  
O. Gürlü ◽  
I. Yilmaz
Keyword(s):  
Single Crystals ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Donor-acceptor pair recombination luminescence from Cu2ZnSnS4bulk single crystals

2006 ◽  
Vol 203 (11) ◽  
pp. 2891-2896 ◽  
Author(s):  
K. Tanaka ◽  
Y. Miyamoto ◽  
H. Uchiki ◽  
K. Nakazawa ◽  
H. Araki
Keyword(s):  
Single Crystals ◽  
Acceptor Pair ◽  
Recombination Luminescence ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Deep Donor-Acceptor Pair Luminescence in Codoped GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
Bing Han ◽  
Joel M. Gregie ◽  
Melville P. Ulmer ◽  
Bruce W. Wessels
Keyword(s):  
Luminescence Band ◽  
Room Temperature ◽  
Deep Level ◽  
Excitation Density ◽  
Acceptor Pair ◽  
Deep Donor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Increasing Temperature ◽  
Luminescent Behavior

ABSTRACTDeep level defects formed in p-type GaN:Mg codoped with shallow donors have been investigated by photoluminescence (PL) spectroscopy. A donor-acceptor pair (DAP) luminescence band peaked at 2.45 eV dominates the room temperature PL spectrum in heavily codoped epilayers. A superlinear dependence of PL intensity on excitation density is observed for this band, with an exponent of 1.4∼1.7. The intensity of this band increases with increasing temperature with a maximum at 264K. To explain the luminescent behavior a DAP model was developed whereby the recombination involves a deep donor and shallow Mg acceptor. The deep donor is tentatively attributed to a DX center.

Spectroscopic Characterization of Ion-Implanted GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
L. Chen ◽  
B. J. Skromme
Keyword(s):  
Low Temperature ◽  
High Purity ◽  
Spectroscopic Characterization ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Do So

ABSTRACTWe investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300 °C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 415-418 ◽  
Author(s):  
Jian Wu Sun ◽  
Georgios Zoulis ◽  
Jean Lorenzzi ◽  
Nikoletta Jegenyes ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Binding Energy ◽  
Low Temperature ◽  
Lower Energy ◽  
Acceptor Pair ◽  
Zero Phonon Line ◽  
Transition Energies ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Acceptor Binding Energy

Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy (~ 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.

scholarly journals Chemical structure and optical signatures of nitrogen acceptors in MgZnO

2020 ◽  
Vol 8 (19) ◽  
pp. 6435-6441
Author(s):  
M. Zakria ◽  
P. Bove ◽  
D. J. Rogers ◽  
F. H. Teherani ◽  
E. V. Sandana ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Structure ◽  
Acceptor Pair ◽  
Low Temperature Deposition ◽  
Donor Acceptor ◽  
Temperature Deposition ◽  
Donor Acceptor Pair

Nitrogen can be incorporated into MgZnO using low-temperature deposition. Donor–acceptor pair emission from N-doped MgZnO is attributed to molecular N2.

Distant Pair Interactions Involving Antisites in GaAs

1985 ◽  
Vol 46 ◽  
Author(s):  
B.C. Cavenett ◽  
M. Deiri
Keyword(s):  
Low Temperature ◽  
Acceptor Pair ◽  
G Factor ◽  
Absorption Energy ◽  
Pair Model ◽  
Triplet Model ◽  
Donor Acceptor ◽  
Distant Pair ◽  
Donor Acceptor Pair ◽  
Pair Interactions

An investigation of the photoquenching behaviour in semi-insulating GaAs at low temperature shows that the ASGa antisite MCD-ODMR is persistently quenched while a broad vacancy-like resonance near g=2, which shows a variation of g-factor with absorption energy, broadens and becomes energy independent. The results are discussed in terms of interacting antisite and vacancy centres in analogy with the distant pair model for donor-acceptor pair recombination and the advantages of the triplet model for the EL2 metastahle state are reviewed.

Reliable Impurity Identification in Inp

1993 ◽  
Vol 325 ◽  
Author(s):  
M. L. Schnoes ◽  
T. D. Harris ◽  
S. J. Pearton ◽  
M. A. Di Giuseppe ◽  
R. Bhat ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
High Purity ◽  
Binding Energies ◽  
Acceptor Pair ◽  
Gas Source ◽  
Donor Identification ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Gas Source Mbe

AbstractLow temperature, resonantly excited photoluminescence (PL) has proven to be the method of choice for impurity identification in GaAs. InP has suffered from insufficient impurity binding energy data to benefit similarly. We will report results of selectively-excited donor-acceptor pair spectroscopy for acceptor identification in InP. Ion implantation doping of high purity InP is used for generation of known impurity samples. Progress toward a complete database of acceptor binding energies in InP is reported. We will discuss the results of high magnetic field low temperature resonant photoluminescence spectroscopy for donor identification in InP. The success of donor ion implantation studies will be included. This data should provide direction for efforts in growing high purity InP by MOCVD and gas source MBE.

Persistent Photoconductivity in n-Type GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
A. E. Wickenden ◽  
G. Beadie ◽  
D. D. Koleske ◽  
W. S. Rabinovich ◽  
J. A. Freitas
Keyword(s):  
Room Temperature ◽  
Deep Level ◽  
Persistent Photoconductivity ◽  
Acceptor Pair ◽  
Deep Level Defect ◽  
Sapphire Substrates ◽  
Defect Centers ◽  
Donor Acceptor ◽  
Si Doped ◽  
Donor Acceptor Pair

ABSTRACTPersistent photoconductivity has been observed in n-type Si-doped GaN grown on sapphire substrates by metalorganic vapor phase epitaxy. The effect has been seen both in films which are of electrically high quality, based on low temperature photoluminescence (PL) and Hall analysis, and in films which either appear to be compensated or which exhibit strong donor-acceptor pair recombination. The photoconductivity has been observed to persist for several days at room temperature (300K). Modeling of the resistance recovery by a stretched exponential treatment may suggest a distribution of deep level defect centers in the Si-doped GaN films.

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