Reliable Impurity Identification in Inp

1993 ◽  
Vol 325 ◽  
Author(s):  
M. L. Schnoes ◽  
T. D. Harris ◽  
S. J. Pearton ◽  
M. A. Di Giuseppe ◽  
R. Bhat ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
High Purity ◽  
Binding Energies ◽  
Acceptor Pair ◽  
Gas Source ◽  
Donor Identification ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Gas Source Mbe

AbstractLow temperature, resonantly excited photoluminescence (PL) has proven to be the method of choice for impurity identification in GaAs. InP has suffered from insufficient impurity binding energy data to benefit similarly. We will report results of selectively-excited donor-acceptor pair spectroscopy for acceptor identification in InP. Ion implantation doping of high purity InP is used for generation of known impurity samples. Progress toward a complete database of acceptor binding energies in InP is reported. We will discuss the results of high magnetic field low temperature resonant photoluminescence spectroscopy for donor identification in InP. The success of donor ion implantation studies will be included. This data should provide direction for efforts in growing high purity InP by MOCVD and gas source MBE.

Spectroscopic Characterization of Ion-Implanted GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
L. Chen ◽  
B. J. Skromme
Keyword(s):  
Low Temperature ◽  
High Purity ◽  
Spectroscopic Characterization ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Do So

ABSTRACTWe investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300 °C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 415-418 ◽  
Author(s):  
Jian Wu Sun ◽  
Georgios Zoulis ◽  
Jean Lorenzzi ◽  
Nikoletta Jegenyes ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Binding Energy ◽  
Low Temperature ◽  
Lower Energy ◽  
Acceptor Pair ◽  
Zero Phonon Line ◽  
Transition Energies ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Acceptor Binding Energy

Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy (~ 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.

scholarly journals Chemical structure and optical signatures of nitrogen acceptors in MgZnO

2020 ◽  
Vol 8 (19) ◽  
pp. 6435-6441
Author(s):  
M. Zakria ◽  
P. Bove ◽  
D. J. Rogers ◽  
F. H. Teherani ◽  
E. V. Sandana ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Structure ◽  
Acceptor Pair ◽  
Low Temperature Deposition ◽  
Donor Acceptor ◽  
Temperature Deposition ◽  
Donor Acceptor Pair

Nitrogen can be incorporated into MgZnO using low-temperature deposition. Donor–acceptor pair emission from N-doped MgZnO is attributed to molecular N2.

Distant Pair Interactions Involving Antisites in GaAs

1985 ◽  
Vol 46 ◽  
Author(s):  
B.C. Cavenett ◽  
M. Deiri
Keyword(s):  
Low Temperature ◽  
Acceptor Pair ◽  
G Factor ◽  
Absorption Energy ◽  
Pair Model ◽  
Triplet Model ◽  
Donor Acceptor ◽  
Distant Pair ◽  
Donor Acceptor Pair ◽  
Pair Interactions

An investigation of the photoquenching behaviour in semi-insulating GaAs at low temperature shows that the ASGa antisite MCD-ODMR is persistently quenched while a broad vacancy-like resonance near g=2, which shows a variation of g-factor with absorption energy, broadens and becomes energy independent. The results are discussed in terms of interacting antisite and vacancy centres in analogy with the distant pair model for donor-acceptor pair recombination and the advantages of the triplet model for the EL2 metastahle state are reviewed.

Photoluminescence Study of p-ZnGeP2 Crystals

1996 ◽  
Vol 450 ◽  
Author(s):  
Yurri V. Rud ◽  
Vasilii Yu ◽  
M. C. Ohmer ◽  
P. G. Shunemann
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Room Temperature ◽  
Directed Crystallization ◽  
Acceptor Pair ◽  
Long Wavelength ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Nonlinear Devices ◽  
Conversion Efficiencies

ABSTRACTPhotoluminescence (PL) steady-state spectra of p-ZnGeP2 (ZGP) single crystals grown by high- and low-temperature directed crystallization have been investigated. It is determined that the long-wavelength component PL with a maximum in the interval 1.2–1.5 eV for different crystals quenched in the temperature range 77–300 K. The long-wavelength component PL are due to donor-acceptor pair transitions. At room temperature the short-wavelength PL with a maximum near 1.85 eV becomes the determining component. The nature of this band discussed. The use of low-temperature directed crystallization reduces the concentration of lattice defects in ZGP single crystals and opens up the new possibilities for increasing the conversion efficiencies of nonlinear devices.

CBED study of low-temperature InP grown by gas source MBE

1993 ◽  
Vol 51 ◽  
pp. 810-811
Author(s):  
R. Rajesh ◽  
M.J. Kim ◽  
J.S. Bow ◽  
R.W. Carpenter ◽  
G.N. Maracas
Keyword(s):  
Low Temperature ◽  
Second Phase ◽  
Material System ◽  
Ion Milling ◽  
Electrical Measurements ◽  
Gas Source ◽  
Structural And Electrical Properties ◽  
The One ◽  
Lt Inp ◽  
Gas Source Mbe

In our previous work on MBE grown low temperature (LT) InP, attempts had been made to understand the relationships between the structural and electrical properties of this material system. Electrical measurements had established an enhancement of the resistivity of the phosphorus-rich LT InP layers with annealing under a P2 flux, which was directly correlated with the presence of second-phase particles. Further investigations, however, have revealed the presence of two fundamentally different types of precipitates. The first type are the surface particles, essentially an artefact of argon ion milling and containing mostly pure indium. The second type and the one more important to the study are the dense precipitates in the bulk of the annealed layers. These are phosphorus-rich and are believed to contribute to the improvement in the resistivity of the material.The observation of metallic indium islands solely in the annealed LT layers warranted further study in order to better understand the exact reasons for their formation.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

Sign in / Sign up

Export Citation Format

Share Document