scholarly journals Donor-acceptor pair recombination in AgIn5S8 single crystals

1999 ◽  
Vol 85 (6) ◽  
pp. 3198-3201 ◽  
Author(s):  
N. M. Gasanly ◽  
A. Serpengüzel ◽  
A. Aydinli ◽  
O. Gürlü ◽  
I. Yilmaz
Keyword(s):  
Single Crystals ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Donor-acceptor pair recombination luminescence from Cu2ZnSnS4bulk single crystals

2006 ◽  
Vol 203 (11) ◽  
pp. 2891-2896 ◽  
Author(s):  
K. Tanaka ◽  
Y. Miyamoto ◽  
H. Uchiki ◽  
K. Nakazawa ◽  
H. Araki
Keyword(s):  
Single Crystals ◽  
Acceptor Pair ◽  
Recombination Luminescence ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Photoluminescence Study of p-ZnGeP2 Crystals

1996 ◽  
Vol 450 ◽  
Author(s):  
Yurri V. Rud ◽  
Vasilii Yu ◽  
M. C. Ohmer ◽  
P. G. Shunemann
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Room Temperature ◽  
Directed Crystallization ◽  
Acceptor Pair ◽  
Long Wavelength ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Nonlinear Devices ◽  
Conversion Efficiencies

ABSTRACTPhotoluminescence (PL) steady-state spectra of p-ZnGeP2 (ZGP) single crystals grown by high- and low-temperature directed crystallization have been investigated. It is determined that the long-wavelength component PL with a maximum in the interval 1.2–1.5 eV for different crystals quenched in the temperature range 77–300 K. The long-wavelength component PL are due to donor-acceptor pair transitions. At room temperature the short-wavelength PL with a maximum near 1.85 eV becomes the determining component. The nature of this band discussed. The use of low-temperature directed crystallization reduces the concentration of lattice defects in ZGP single crystals and opens up the new possibilities for increasing the conversion efficiencies of nonlinear devices.

Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals

2006 ◽  
Vol 88 (14) ◽  
pp. 141919 ◽  
Author(s):  
D. C. Reynolds ◽  
C. W. Litton ◽  
T. C. Collins ◽  
J. E. Hoelscher ◽  
J. Nause
Keyword(s):  
Single Crystals ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials
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