Piezoelectric Force Sensing Pb(Zr,Ti)O3 Microcantilever Array for Multiprobe Scanning Force Microscopy

1996 ◽  
Vol 444 ◽  
Author(s):  
T. Itoh ◽  
C. Lee ◽  
J. Chu ◽  
T. Suga
Keyword(s):  
Sol Gel ◽  
Scanning Force Microscopy ◽  
Zno Films ◽  
Scanning Force Microscope ◽  
Force Microscopy ◽  
Pzt Thin Film ◽  
Maximum Range ◽  
Scanning Force ◽  
Natural Resonance Frequency ◽  
Piezoelectric Constants

AbstractThis paper reports on a multiprobe scanning force microscope (SFM) utilizing an array of individually controlled piezoelectric Pb(Zr,Ti)O3 (PZT) microcantilevers. Each cantilever is unimorph beam including a sol-gel derived PZT thin film that has high piezoelectric constants in comparison with sputtered ZnO films. The cantilever is excited and actuated in z direction by applying ac and feedback dc voltages to the PZT layer. The variation of vibration amplitude is detected by measuring the change of current through the PZT layer. The 200-μm-long PZT microcantilever with the natural resonance frequency of 63.8 kHz has the high actuation sensitivity of 150 nmN and the maximum range of more than 1.5 μm. By actuating the self-excited cantilever to keep the current constant, we have succeeded in independent dynamic operation without z feedback actuation of the sample-side scanner. We have obtained independent parallel 2 × 1 images using two cantilevers of the array.

Contactless Voltage and Current Contrast Imaging with Scanning Force Microscope Based Test Systems

2000 ◽  
Author(s):  
W. Mertin ◽  
S.-W. Bae ◽  
U. Behnke ◽  
R. Weber ◽  
E. Kubalek
Keyword(s):  
Integrated Circuits ◽  
Spatial Resolution ◽  
State Of The Art ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Contrast Imaging ◽  
Scanning Force Microscope ◽  
Force Microscopy ◽  
Scanning Force ◽  
Electric Signals

Abstract Significant improvements in the performance of modern integrated circuits (ICs) require also an increase of the performance of the used circuit internal test techniques regarding bandwidth, spatial resolution, and sensitivity. Due to its outstanding lateral and vertical spatial resolution in the nanometer regime scanning force microscopy (SFM) based on scanning probe microscopes is well suited for the investigation of very small structures. Furthermore it has been demonstrated that with SFM also electric signals can be contactless tested. This feature can be used for a circuit internal failure analysis of ICs. In this paper principles, examples, and the state-of-the-art of voltage and current measurement based on SFM will be presented.

Scanning force microscope Z-calibration using steps on chemically etched mica

1995 ◽  
Vol 53 ◽  
pp. 204-205
Author(s):  
L. Fei ◽  
P. Fraundorf
Keyword(s):  
Lattice Spacing ◽  
Scanning Force Microscopy ◽  
Calibration Standard ◽  
Scanning Force Microscope ◽  
Calibration Standards ◽  
Gold Particles ◽  
Force Microscopy ◽  
Muscovite Mica ◽  
Scanning Force ◽  
Size Variability

Obtaining reliable dimensional information in all three directions is very important in scanning force microscopy (SFM). Calibration standards for SFM should be easy to produce and reliable. For example, mica is often used as a lateral calibration standard, because lattice fringes are relatively easy to obtain. However, reliable height information is hard to get. Pits formed by lithography (180 nm in depth) are used for vertical calibration by some SFM manufacturers.1 These standards have 10variability and are large on the size scale of monolayers. Colloidal gold particles have been proposed as one kind of SFM vertical standard, but the size variability of these particles (e.g. ranging from 5 to 24 nm) makes their use of limited practical value.One solution to the problem is to use chemically etched mica as height calibration standard. Mica has a layered structure, and its c-axis is well denned and weakly bonded. In this study, we used muscovite mica which has c-axis lattice spacing of 10 Å.

Nanometer-Scale Modification and Imaging of Polyimide Films by Scanning Force Microscopy

1991 ◽  
Vol 239 ◽  
Author(s):  
W. N. Unertl ◽  
X. Jin
Keyword(s):  
Scanning Force Microscopy ◽  
Polymer Surfaces ◽  
Degree Of Crystallinity ◽  
Nanometer Scale ◽  
Polyimide Films ◽  
Scanning Force Microscope ◽  
Force Microscopy ◽  
Scanning Force ◽  
Micrometer Size ◽  
The Degree Of Crystallinity

ABSTRACTThe sharp tip of a scanning force microscope can be used to make controlled modifications of polymer surfaces. In this paper, we describe the properties of micrometer size pits up to 900 Å deep formed on Kapton-H surfaces. The structure at the bottom of the pits appears to be closely related to the degree of crystallinity near the surface. We also use elasticity theory to estimate that the resolution of scanning force microscopy for polymer surfaces is about 160 Å for tips with 400 Å radius. This estimate agrees well with the resolution obtained in images of polyimide surfaces.

Sol-gel derived PZT force sensor for scanning force microscopy

1996 ◽  
Vol 44 (1) ◽  
pp. 25-29 ◽  
Author(s):  
C. Lee ◽  
T. Itoh ◽  
G. Sasaki ◽  
T. Suga
Keyword(s):  
Sol Gel ◽  
Scanning Force Microscopy ◽  
Force Sensor ◽  
Force Microscopy ◽  
Scanning Force

Investigations of Mesoscopic Ferroelectric Structures Prepared by Imprint Lithography

2002 ◽  
Vol 748 ◽  
Author(s):  
C. Harnagea ◽  
M. Alexe ◽  
J. Schilling ◽  
R. B. Wehrspohn ◽  
D. Hesse ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Scanning Force Microscopy ◽  
Chemical Route ◽  
Force Microscopy ◽  
Grain Sizes ◽  
Ferroelectric Layer ◽  
Scanning Force

ABSTRACTArrays of mesoscopic ferroelectric PZT structures with lateral sizes from several micrometers down to below 300 nm were prepared applying nanoimprint lithography. The ferroelectric properties of the mesoscopic structures were investigated by scanning force microscopy in piezoresponse mode. The best chemical route to obtain ferroelectric structures was found to be the sol-gel method. Using Nb-doped SrTiO3 single crystals as bottom electrodes, the crystallization into the ferroelectric phase was uniform with grain sizes in the 35 nm range. The best ferroelectric properties of individual 300 nm structures were obtained if an intermediate, continuous ferroelectric layer was present on the bottom electrode.

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

Log-log scale roughness spectroscopy of surfaces

1993 ◽  
Vol 51 ◽  
pp. 224-225
Author(s):  
P. Fraundorf ◽  
B. Armbruster
Keyword(s):  
Power Spectrum ◽  
Autocorrelation Function ◽  
Power Spectra ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Scanning Force ◽  
Lateral Structure ◽  
Scale Roughness

Optical interferometry, confocal light microscopy, stereopair scanning electron microscopy, scanning tunneling microscopy, and scanning force microscopy, can produce topographic images of surfaces on size scales reaching from centimeters to Angstroms. Second moment (height variance) statistics of surface topography can be very helpful in quantifying “visually suggested” differences from one surface to the next. The two most common methods for displaying this information are the Fourier power spectrum and its direct space transform, the autocorrelation function or interferogram. Unfortunately, for a surface exhibiting lateral structure over several orders of magnitude in size, both the power spectrum and the autocorrelation function will find most of the information they contain pressed into the plot’s origin. This suggests that we plot power in units of LOG(frequency)≡-LOG(period), but rather than add this logarithmic constraint as another element of abstraction to the analysis of power spectra, we further recommend a shift in paradigm.

Anisotropy of Nanoindentation – a tool for the determination of nanocrystal orientation ?

2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Scanning Force Microscopy ◽  
Depth Range ◽  
Dislocation Loops ◽  
Force Microscopy ◽  
Pile Up ◽  
Out Of Plane ◽  
Scanning Force ◽  
Dynamics Simulations

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.

Structural and Spectroscopic Study of Langmuir-Schäfer Films of Bis Zn-Ethane-Bridged Porphyrins Dimer

2003 ◽  
Vol 771 ◽  
Author(s):  
G. Panzera ◽  
S. Conoci ◽  
S. Coffa ◽  
B. Pignataro ◽  
S. Sortino ◽  
...  
Keyword(s):  
Surface Pressure ◽  
Scanning Force Microscopy ◽  
Structural Features ◽  
Solid Surfaces ◽  
Condensed Phases ◽  
Brewster Angle Microscopy ◽  
Force Microscopy ◽  
Vis Spectroscopy ◽  
Scanning Force ◽  
Supramolecular Aggregates

AbstractThin films (1-24 layers) of bis-zinc ethane-bridged porphyrin dimer (1) have been transferred on solid surfaces, by the Langmuir- Schäfer (LS) horizontal method. The related surface pressurearea isotherm curve shows that in dependence of the film pressure different condensed phases may occur in the monolayer. The inspection of the monolayer by Brewster Angle Microscopy (BAM) reveals the presence of peculiar networks whose structural features seemingly change upon film compression. On the other hand, the Scanning Force Microscopy (SFM) analysis performed on LS films shows fractal networks constituted by nanoscopic supramolecular aggregates, whose shape and size depend again on the LS deposition surface pressure. Finally, also UV-vis spectroscopy measurements indicates that the absorption is almost linearly related to the film thickness that is directly connected to the surface pressure.

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