Contactless Voltage and Current Contrast Imaging with Scanning Force Microscope Based Test Systems

2000 ◽  
Author(s):  
W. Mertin ◽  
S.-W. Bae ◽  
U. Behnke ◽  
R. Weber ◽  
E. Kubalek
Keyword(s):  
Integrated Circuits ◽  
Spatial Resolution ◽  
State Of The Art ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Contrast Imaging ◽  
Scanning Force Microscope ◽  
Force Microscopy ◽  
Scanning Force ◽  
Electric Signals

Abstract Significant improvements in the performance of modern integrated circuits (ICs) require also an increase of the performance of the used circuit internal test techniques regarding bandwidth, spatial resolution, and sensitivity. Due to its outstanding lateral and vertical spatial resolution in the nanometer regime scanning force microscopy (SFM) based on scanning probe microscopes is well suited for the investigation of very small structures. Furthermore it has been demonstrated that with SFM also electric signals can be contactless tested. This feature can be used for a circuit internal failure analysis of ICs. In this paper principles, examples, and the state-of-the-art of voltage and current measurement based on SFM will be presented.

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

scholarly journals The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal
Keyword(s):  
Memory Effect ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Versatile Tool ◽  
Scanning Force ◽  
Memristor Device

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

scholarly journals Nanomechanical Probing With Scanning Force Microscopy

2001 ◽  
Vol 9 (1) ◽  
pp. 8-15 ◽  
Author(s):  
V. V. Tsukruk ◽  
V. V. Gorbunov
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Static Force ◽  
Local Surface ◽  
Materials Properties ◽  
Force Microscopy ◽  
Nanomechanical Properties ◽  
Scanning Force ◽  
Magnetic And Electric Properties

Highly localized probing of surface nanomechanical properties with a submicron resolution can be accomplished with scanning probe microscopy (SPM). The SPM ability to probe local surface topography in conjunction with mechanical, adhesive, friction, thermal, magnetic, and electric properties is unique.1 However, the quantitative probing of the nanomechanical materials properties is still a challenge and only a few examples have been published to date.In this note, we briefly review the latest developments in the nanomechanical probing of compliant materials (predominantly polymers). We solely focus our analysis of SPM-based approach in a so-called static force spectroscopy (SFS) mode.

The Effect of -Cyclodextrin Inclusion on the Morphology of [Ru(bpy)2Cl(BPEB)](PF6) Films by Scanning Force Microscopy

2005 ◽  
Vol 11 (S03) ◽  
pp. 142-145
Author(s):  
S. H. Toma ◽  
M. Nakamura ◽  
H. E. Toma
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Force Microscopy ◽  
Recognition Site ◽  
Van Der Waals Interactions ◽  
Scanning Probe ◽  
Guest Molecules ◽  
Force Microscopy ◽  
Scanning Force ◽  
Great Relevance ◽  
Macrocyclic Molecules

Molecular level organization has been a subject of great relevance in supramolecular chemistry and nanotechnology. Supramolecular chemists count on the ability of molecules to form several kinds of organization, allowing the development of nanoscaled devices. In this way, the scanning probe microscopy provides a great tool for characterization, manipulation and interfacing such devices [1]. Regarding the ruthenium complexes [Ru(bpy)2Cl(BPEB)](PF6) and {[Ru(bpy)2Cl]2(BPEB)}(PF6)2, where bpy = 2,2'-bipyridine, the presence of the BPEB (1,4-bis[4-pyridyl)ethenyl]benzene) ligand has an important role as a recognition site for van der Waals interactions (Figure 1). On the other hand, cyclodextrins are macrocyclic molecules bearing a hydrophobic cavity that can support several types of guest molecules [2-3]. In this work we are showing the influence of the recognition site of the BPEB ligand and the formation of an inclusion compound in the patterning structures of films deposited over mica substrates, by SFM microscopy.

Scanning force microscope Z-calibration using steps on chemically etched mica

1995 ◽  
Vol 53 ◽  
pp. 204-205
Author(s):  
L. Fei ◽  
P. Fraundorf
Keyword(s):  
Lattice Spacing ◽  
Scanning Force Microscopy ◽  
Calibration Standard ◽  
Scanning Force Microscope ◽  
Calibration Standards ◽  
Gold Particles ◽  
Force Microscopy ◽  
Muscovite Mica ◽  
Scanning Force ◽  
Size Variability

Obtaining reliable dimensional information in all three directions is very important in scanning force microscopy (SFM). Calibration standards for SFM should be easy to produce and reliable. For example, mica is often used as a lateral calibration standard, because lattice fringes are relatively easy to obtain. However, reliable height information is hard to get. Pits formed by lithography (180 nm in depth) are used for vertical calibration by some SFM manufacturers.1 These standards have 10variability and are large on the size scale of monolayers. Colloidal gold particles have been proposed as one kind of SFM vertical standard, but the size variability of these particles (e.g. ranging from 5 to 24 nm) makes their use of limited practical value.One solution to the problem is to use chemically etched mica as height calibration standard. Mica has a layered structure, and its c-axis is well denned and weakly bonded. In this study, we used muscovite mica which has c-axis lattice spacing of 10 Å.

Piezoelectric Force Sensing Pb(Zr,Ti)O3 Microcantilever Array for Multiprobe Scanning Force Microscopy

1996 ◽  
Vol 444 ◽  
Author(s):  
T. Itoh ◽  
C. Lee ◽  
J. Chu ◽  
T. Suga
Keyword(s):  
Sol Gel ◽  
Scanning Force Microscopy ◽  
Zno Films ◽  
Scanning Force Microscope ◽  
Force Microscopy ◽  
Pzt Thin Film ◽  
Maximum Range ◽  
Scanning Force ◽  
Natural Resonance Frequency ◽  
Piezoelectric Constants

AbstractThis paper reports on a multiprobe scanning force microscope (SFM) utilizing an array of individually controlled piezoelectric Pb(Zr,Ti)O3 (PZT) microcantilevers. Each cantilever is unimorph beam including a sol-gel derived PZT thin film that has high piezoelectric constants in comparison with sputtered ZnO films. The cantilever is excited and actuated in z direction by applying ac and feedback dc voltages to the PZT layer. The variation of vibration amplitude is detected by measuring the change of current through the PZT layer. The 200-μm-long PZT microcantilever with the natural resonance frequency of 63.8 kHz has the high actuation sensitivity of 150 nmN and the maximum range of more than 1.5 μm. By actuating the self-excited cantilever to keep the current constant, we have succeeded in independent dynamic operation without z feedback actuation of the sample-side scanner. We have obtained independent parallel 2 × 1 images using two cantilevers of the array.

Application of Scanning Probe Microscopy Techniques with Electrical Modules in Via Related Defects

2012 ◽  
Author(s):  
Xiang-Dong Wang ◽  
N. David Theodore ◽  
Gil Garteiz ◽  
Paul Sanders
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
State Of The Art ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Large Size ◽  
Atomic Force ◽  
First Case ◽  
Conducting Path ◽  
Microscopy Techniques

Abstract Identifying defects in marginally failed vias has long been a challenge for failure analysis (FA) of state-of-the-art semiconductor integrated circuits. This paper presents two cases where a conventional FA approach is found to not be effective. The first case involves high resistance or marginally open vias. The second case involves early breakdown of large capacitors. The large size of the capacitor and the lack of ways to track electrical flow during diagnosis made it difficult to isolate the defect. The paper shows that conducting atomic force microscopy (C-AFM) and scanning capacitance microscopy (SCM) are effective techniques for isolation of via-related defects. The SCM technique could be applied to samples without a direct conducting path to the substrate, such as SOI samples. On the other hand, C-AFM allows current imaging as well as I-V characterization whenever a direct conductive path is available.

Ferroelectric Domain Engineering in Stoichiometric LiNbO3 by Scanning Probe Microscopy

2012 ◽  
Vol 485 ◽  
pp. 510-513
Author(s):  
Hui Feng Bo ◽  
Zhan Xin Zhang ◽  
Hong Kui Hu ◽  
Ru Zheng Wang
Keyword(s):  
Lithium Niobate ◽  
Scanning Probe Microscopy ◽  
Pulse Width ◽  
Scanning Force Microscopy ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Scanning Probe ◽  
Feature Size ◽  
Force Microscopy ◽  
Scanning Force

Scanning force microscopy is used to investigate nanoscale ferroelectric domain engineering in near-stoichiometric lithium niobate (SLN) single crystals. The topography of the SLN single crystal was studied after polished to about 10 micron thickness. Dot patterns of the domain structure were fabricated by applying positive DC voltages of magnitude form 80 to 100 V with different pulse width from 0.5 to 20 s. The dot nanodomains of radius down to 200 nm were fabricated. With the increase of the magnitude of voltage and pulse width, feature size of switched domains increased to 940 nm.

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