Correlation Between Structural and Electronical Properties Of Strained V2O3 Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Schuler ◽  
S. Klimm ◽  
S. Horn
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Growth Conditions ◽  
Metallic Phase ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Island Growth ◽  
Temperature Dependent ◽  
Metallic Behavior ◽  
Afm Imaging

AbstractEpitaxial thin films of V2O3 were grown on c-axis oriented sapphire substrates by reactive e-beam evaporation. The high orientation and epitaxy is shown by low energy electron and x-ray diffraction. The microstucture of the films was investigated by AFM imaging. The measurements show an island growth mode with a temperature dependent increase of the grain size. At a growth temperature of above 700°C a change of the surface structure is observed, which produces much more structured and irregular shaped crystallites. High temperature growth also causes changes in the electronical properties, due to an increased stress in the films as measured by XRD. The metal-insulator transition (MIT) and the properties of the metallic phase of the films were determined mainly by temperature dependent electrical resistivity measurements. The metallic properties are distorted in films grown at low temperature (T<500°C) probably due to defects, dislocations and grain boundaries. Favorable growth conditions for films showing a single crystal like MIT were found in a narrow temperature range around 550°C. For higher growth temperatures (T>650°C) metallic behavior at high temperatures is suppressed by an in plane tensile stress. The electronic properties of such films are similar to those of chromium doped V2O3. The relation between growth conditions, structural properties and resulting electronic properties is discussed.

Photoluminescence of Cu(In1-X, GaX)Se2 Epitaxial Thin Films Grown by MOVPE

2003 ◽  
Vol 763 ◽  
Author(s):  
N. Rega ◽  
S. Siebentritt ◽  
J. Albert ◽  
M. Lux
Keyword(s):  
Thin Films ◽  
Defect Structure ◽  
Excitation Power ◽  
Intrinsic Defect ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Energy Position ◽  
X Ray ◽  
Intrinsic Defect Structure

AbstractTo study the intrinsic defect structure, detailed photoluminescence (PL) measurements of epitaxial Cu-rich Cu(In1-X, GaX)Se2 grown by metalorganic vapor phase epitaxy (MOVPE) were performed. Distinct emissions appear at an energy position 80-150meV below the bandgap. Excitation-power-dependent measurements showed blue shifts up to 18meV/decade for these emissions. The temperature dependent PL results in a defect energy for this emission of 50-80meV due to a free-to-bound (FB) transition. This indicates that the emissions of this material are controlled by fluctuating potentials due to high compensation or compositional inhomogeneity. The compositional inhomogeneity is detected by x-ray diffraction (XRD) and occurs especially for epitaxial layers grown at 570°C.

Growth study of epitaxial FexZn1−xF2 thin films

2001 ◽  
Vol 16 (6) ◽  
pp. 1769-1775 ◽  
Author(s):  
J. McChesney ◽  
M. Hetzer ◽  
H. Shi ◽  
T. Charlton ◽  
D. Lederman
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Magnetic Phase Diagram ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Growth Study ◽  
Lattice Match ◽  
Different Temperatures ◽  
Bulk Single Crystals ◽  
The Ideal

The FexZn1−xF2 alloy has been shown to be a model system for studying the magnetic phase diagram of dilute magnets. Whereas the growth of bulk single crystals with fixed Zn concentrations is difficult, the thin film growth is comparatively simpler and more flexible. To gain an understanding of the growth of FexZn1−xF2 films, a method was developed to grow smooth films at fixed concentrations. This was done by depositing a MgF2 buffer layer on MgF2(001) substrates and then depositing FeF2 and ZnF2 [001]-orientated epitaxial thin films at different temperatures. Surprisingly, the lattice spacing depends strongly on the growth temperature, for 44-nm-thick FeF2 films and 77-nm-thick ZnF2 films. This indicates a significant amount of stress, despite the close lattice match between the films and the MgF2 substrate. Thick alloy samples (approximately 500 nm thick) were grown by co-evaporation from the FeF2 and ZnF2 sources at the ideal temperature determined from the growth study, and their concentration was accurately determined using x-ray diffraction.

scholarly journals Structural, magnetic, and electronic properties of (110)-oriented epitaxial thin films of the bilayer manganite La1.2Sr1.8Mn2O7

2005 ◽  
Vol 87 (14) ◽  
pp. 142508 ◽  
Author(s):  
Yayoi Takamura ◽  
Jostein K. Grepstad ◽  
Rajesh V. Chopdekar ◽  
Yuri Suzuki ◽  
Ann F. Marshall ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Epitaxial Thin Films

scholarly journals Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

APL Materials ◽  
2018 ◽  
Vol 6 (5) ◽  
pp. 056101 ◽  
Author(s):  
Motoki Osada ◽  
Kazunori Nishio ◽  
Harold Y. Hwang ◽  
Yasuyuki Hikita
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Epitaxial Thin Films

Electrical Transport and In-Situ X-Ray Studies of the Formation of TiSi2 Thin Films on Si

1986 ◽  
Vol 77 ◽  
Author(s):  
J. C. Hensel ◽  
J. M. Vandenberg ◽  
L. F. Mattheiss ◽  
F. C. Unterwald ◽  
A. Maury
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Structural Phase ◽  
X Ray Diffraction ◽  
Metallic Behavior ◽  
Distinctive Features ◽  
X Ray ◽  
Total Energies ◽  
Sputter Deposited

ABSTRACTThe formation of TiSi2 thin films on Si has been investigated by in situ x-ray diffraction and by electrical transport. The x-ray results show unequivocally that the staging proceeds through two orthorhombic polytypes of TiSi2 according to the sequence: sputter-deposited metallic Ti films on Si (001) → TiSi2 (C49 structure) → TiSi2 (C54 structure), with no evidence of lower suicides. Electrical transport shows metallic behavior for all phases and distinctive features in the annealing curves which correlate with the structural transformations. Most importantly, the resistivity, characteristically very high for the C49 phase, undergoes a precipitous drop at the C49 → C54 transition. Total energies for both phases are calculated and, consistent with the occurrence of a structural phase transformation, are found not to differ appreciably.

Convergent-beam parallel detection x-ray diffraction system for characterizing combinatorial epitaxial thin films

2000 ◽  
Author(s):  
Kazuhiko Omote ◽  
T. Kikuchi ◽  
J. Harada ◽  
Masashi Kawasaki ◽  
Akira Ohtomo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Parallel Detection ◽  
Convergent Beam

The Effect of Initial Growth Conditions on the Tilting of Lattice Planes in InP-ON-GaAs Heterostructures

1991 ◽  
Vol 238 ◽  
Author(s):  
Ferenc Riesz ◽  
K. Lischka ◽  
K. Rakennus ◽  
T. Hakkarainen ◽  
A. Pesek ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Initial Growth ◽  
Lattice Plane ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Gas Source ◽  
Gaas Substrates ◽  
Nucleation Model ◽  
Lattice Planes ◽  
Lower Temperature

ABSTRACTThe relative misorientation (tilt) between the epilayer and substrate (400) lattice planes of InP epilayers grown by gas-source molecular beam epitaxy on (100) GaAs substrates misoriented towards the (110) plane was studied by high resolution x-ray diffraction. For the growth temperature of 490–500°C, the direction of the relative tilt was nearly coincident with the direction of the substrate lattice plane tilting. In contrary, when a buffer layer was deposited at a lower temperature of 400–450°C prior to growth, an azimuthal rotation of about 45° was found between the directions of the relative tilt and the substrate lattice plane tilting. In order to explain the results, a temperature-dependent anisotropic nucleation model is proposed.

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