The Effect of Initial Growth Conditions on the Tilting of Lattice Planes in InP-ON-GaAs Heterostructures

1991 ◽  
Vol 238 ◽  
Author(s):  
Ferenc Riesz ◽  
K. Lischka ◽  
K. Rakennus ◽  
T. Hakkarainen ◽  
A. Pesek ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Initial Growth ◽  
Lattice Plane ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Gas Source ◽  
Gaas Substrates ◽  
Nucleation Model ◽  
Lattice Planes ◽  
Lower Temperature

ABSTRACTThe relative misorientation (tilt) between the epilayer and substrate (400) lattice planes of InP epilayers grown by gas-source molecular beam epitaxy on (100) GaAs substrates misoriented towards the (110) plane was studied by high resolution x-ray diffraction. For the growth temperature of 490–500°C, the direction of the relative tilt was nearly coincident with the direction of the substrate lattice plane tilting. In contrary, when a buffer layer was deposited at a lower temperature of 400–450°C prior to growth, an azimuthal rotation of about 45° was found between the directions of the relative tilt and the substrate lattice plane tilting. In order to explain the results, a temperature-dependent anisotropic nucleation model is proposed.

Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions

1991 ◽  
Vol 114 (1-2) ◽  
pp. 127-132 ◽  
Author(s):  
Ferenc Riesz ◽  
K. Lischka ◽  
K. Rakennus ◽  
T. Hakkarainen ◽  
A. Pesek
Keyword(s):  
Growth Conditions ◽  
Initial Growth ◽  
Gaas Substrates ◽  
Lattice Planes

Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Mirin ◽  
Mohan Krishnamurthy ◽  
James Ibbetson ◽  
Arthur Gossard ◽  
John English ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
High Energy Electron ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Facet Formation

AbstractHigh temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.

Drastic Change in the Gan Film Quality by In-Situ Controlling Surface Reconstructions In Gsmbe

1997 ◽  
Vol 482 ◽  
Author(s):  
X. Q. Shen ◽  
S. Tanaka ◽  
S. Iwai ◽  
Y. Aoyagi
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Surface Reconstructions ◽  
Gan Film

AbstractGaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

Limitation of Selective Epitaxial Growth Conditions in Gas Source MBE Using Si2H6

1990 ◽  
Vol 204 ◽  
Author(s):  
Junro Sakai ◽  
Ken-Ichi Aketagawa ◽  
Toru Tatsumi
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Native Oxide ◽  
Initial Growth ◽  
Selective Epitaxial Growth ◽  
Gas Source ◽  
Gas Source Mbe

ABSTRACTLow temperature and high growth rate selective epitaxial growth (SEG) on Si02 patterned Si (001) substrate in gas-source molecular-beam epitaxy (GS-MBE) using pure Si2H6 has been investigated by RHEED observation. In the temperature range of 550 to 850°C, SEG was completely obtained at an initial growth stage. Limiting conditions of SEG were closely related with critical volume of supply gas that was equal to the total amount molecules supplied on SiO2 surface during the incubation period of initial growth. The surface SiO2 was induced to evaporate with Si2H6 supplied above 800°C, so that thermal cleaning temperature for removing native oxide came down to 800°C. As a result, the maximum process temperature of Si SEG now became 800°C, and its growth rate reached as high as 645A/min at growth temperature of 700°C.

Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals

2008 ◽  
Vol 600-603 ◽  
pp. 31-34 ◽  
Author(s):  
Krzysztof Grasza ◽  
Emil Tymicki
Keyword(s):  
Crystallization Front ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Structural Quality ◽  
Initial Growth ◽  
X Ray Diffraction ◽  
Central Surface ◽  
Growth System ◽  
Reproducible Method ◽  
Pressure Changes

Bulk crystals of 6H and 4H silicon carbide have been grown by PVT method. 6H-SiC were obtained in optimized near-to-equilibrium growth conditions in order to improve the crystal quality and to provide the 6H seeds for 6H to 4H-SiC conversion. In experiments of 6H to 4H polytype transformation a set of invariable growth conditions was applied: C-face seed, C-rich atmosphere, on-axis seed orientation, pre-heating of the source material, slightly convex crystallization front and optimized geometry of the growth system. Other growth parameters were varied to optimize the polytype conversion, e.g.: structural quality of the seed, intentionally added impurity (N and/or Sc), initial growth stage recipe, argon pressure and temperature gradient - resulting in variety of growth rates and temperatures of the seed. Special attention was paid to seed passivation and a scheme of temperature and inert gas pressure changes during growth. Crystals were characterized by KOH etching, X-ray diffraction, optical and AFM microscopy. A reproducible method of 75% efficient conversion was elaborated. A large central surface free of micropipes was observed with characteristic six symmetrical ridges as well as the increased concentration of nitrogen. The parasitic 15R-SiC polytype was nucleated on the vicinal part of the crystallization front of 6H-SiC and 4H-SiC crystals.

Correlation Between Structural and Electronical Properties Of Strained V2O3 Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Schuler ◽  
S. Klimm ◽  
S. Horn
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Growth Conditions ◽  
Metallic Phase ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Island Growth ◽  
Temperature Dependent ◽  
Metallic Behavior ◽  
Afm Imaging

AbstractEpitaxial thin films of V2O3 were grown on c-axis oriented sapphire substrates by reactive e-beam evaporation. The high orientation and epitaxy is shown by low energy electron and x-ray diffraction. The microstucture of the films was investigated by AFM imaging. The measurements show an island growth mode with a temperature dependent increase of the grain size. At a growth temperature of above 700°C a change of the surface structure is observed, which produces much more structured and irregular shaped crystallites. High temperature growth also causes changes in the electronical properties, due to an increased stress in the films as measured by XRD. The metal-insulator transition (MIT) and the properties of the metallic phase of the films were determined mainly by temperature dependent electrical resistivity measurements. The metallic properties are distorted in films grown at low temperature (T<500°C) probably due to defects, dislocations and grain boundaries. Favorable growth conditions for films showing a single crystal like MIT were found in a narrow temperature range around 550°C. For higher growth temperatures (T>650°C) metallic behavior at high temperatures is suppressed by an in plane tensile stress. The electronic properties of such films are similar to those of chromium doped V2O3. The relation between growth conditions, structural properties and resulting electronic properties is discussed.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

scholarly journals One-step synthesis of nitrogen-grafted copper-gallic acid for enhanced methylene blue removal

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shella Permatasari Santoso ◽  
Vania Bundjaja ◽  
Artik Elisa Angkawijaya ◽  
Chintya Gunarto ◽  
Alchris Woo Go ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Adsorption Capacity ◽  
Gallic Acid ◽  
Synthesis Method ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
One Step ◽  
Detailed Assessment ◽  
Higher Temperature

AbstractNitrogen-grafting through the addition of glycine (Gly) was performed on a metal- phenolic network (MPN) of copper (Cu2+) and gallic acid (GA) to increase its adsorption capacity. Herein, we reported a one-step synthesis method of MPN, which was developed according to the metal–ligand complexation principle. The nitrogen grafted CuGA (Ng-CuGA) MPN was obtained by reacting Cu2+, GA, and Gly in an aqueous solution at a molar ratio of 1:1:1 and a pH of 8. Several physicochemical measurements, such as Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), N2 sorption, X-ray diffraction (XRD), and thermal gravimetry analysis (TGA), were done on Ng-CuGA to elucidate its characteristics. The analysis revealed that the Ng-CuGA has non-uniform spherical shaped morphology with a pore volume of 0.56 cc/g, a pore size of 23.25 nm, and thermal stability up to 205 °C. The applicational potential of the Ng-CuGA was determined based on its adsorption capacity against methylene blue (MB). The Ng-CuGA was able to adsorb 190.81 mg MB per g adsorbent at a pH of 6 and temperature of 30 °C, which is 1.53 times higher than the non-grafted CuGA. Detailed assessment of Ng-CuGA adsorption properties revealed their pH- and temperature-dependent nature. The adsorption capacity and affinity were found to decrease at a higher temperature, demonstrating the exothermic adsorption behavior.

scholarly journals An accelerated and effective synthesis of zinc borate from zinc sulfate using sonochemistry

2020 ◽  
Vol 43 (1) ◽  
pp. 7-14
Author(s):  
Ali Can Ersan ◽  
Azmi Seyhun Kipcak ◽  
Meral Yildirim Ozen ◽  
Nurcan Tugrul
Keyword(s):  
Inorganic Compounds ◽  
Zinc Borate ◽  
High Yield ◽  
X Ray Diffraction ◽  
Ultrasonic Probe ◽  
Minimum Particle Size ◽  
Effective Synthesis ◽  
Ft Ir ◽  
Lower Temperature ◽  
Borate Compound

AbstractRecently, sonochemistry has been used for the synthesis of inorganic compounds, such as zinc borates. In this study using zinc sulphate heptahydrate (ZnSO4·7H2O) and boric acid (H3BO3) as starting materials, a zinc borate compound in the form of Zn3B6O12·3.5H2O was synthesized using an ultrasonic probe. Product’s characterization was carried out with using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FT-IR) and Raman spectroscopy. Zinc borate compound’s chemical bond structure was observed with Raman and FTIR. From the XRD results it was seen that Zn3B6O12·3.5H2O can be quickly synthesized upon heating at 80°C and 85°C (55 min) or 90°C (45 min) in very high yield (>90%). The minimum particle size obtained was ~143 μm from the SEM results. Zinc borate compound was synthesized at a lower temperature in less time than other synthesized zinc metal compound in literature.

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