Convergent-beam parallel detection x-ray diffraction system for characterizing combinatorial epitaxial thin films

2000 ◽  
Author(s):  
Kazuhiko Omote ◽  
T. Kikuchi ◽  
J. Harada ◽  
Masashi Kawasaki ◽  
Akira Ohtomo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Parallel Detection ◽  
Convergent Beam

scholarly journals A study of (111) oriented epitaxial thin films of In2O3 on cubic Y-doped ZrO2 by synchrotron based x-ray diffraction – ERRATUM

2012 ◽  
Vol 27 (18) ◽  
pp. 2447-2447 ◽  
Author(s):  
Anna Regoutz ◽  
Kelvin H.L. Zhang ◽  
Russell G. Egdell ◽  
Didier Wermeille ◽  
Roger A. Cowley
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray

X-Ray diffraction line broadening by stacking faults in SrBi2Nb2O9/SrTiO3 epitaxial thin films

2001 ◽  
Vol 391 (1) ◽  
pp. 42-46 ◽  
Author(s):  
A. Boulle ◽  
C. Legrand ◽  
R. Guinebretière ◽  
J.P. Mercurio ◽  
A. Dauger
Keyword(s):  
Thin Films ◽  
Stacking Faults ◽  
Diffraction Line ◽  
Epitaxial Thin Films ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Thermal expansion of the new perovskite substrates DyScO3 and GdScO3

2005 ◽  
Vol 20 (4) ◽  
pp. 952-958 ◽  
Author(s):  
M.D. Biegalski ◽  
J.H. Haeni ◽  
S. Trolier-McKinstry ◽  
D.G. Schlom ◽  
C.D. Brandle ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Rare Earth ◽  
Lattice Spacing ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients ◽  
Increasing Temperature

The thermal expansion coefficients of DyScO3 and GdScO3 were determined from298 to 1273 K using x-ray diffraction. The average thermal expansion coefficients of DyScO3 and GdScO3 were 8.4 and 10.9 ppm/K, respectively. No phase transitions were detected over this range, though the orthorhombicity decreased with increasing temperature. These thermal expansion coefficients are similar to other oxide perovskites (e.g., BaTiO3 or SrTiO3), making these rare-earth scandates promising substrates for the growth of epitaxial thin films of many oxide perovskites that have similar lattice spacing and thermal expansion coefficients.

Structure and Morphology of Epitaxially Intergrown (100)- and (116)-Oriented SrBi2Ta2O9 Ferroelectric Thin Films on SrLaGaO4(110) Substrates

2001 ◽  
Vol 688 ◽  
Author(s):  
H. N. Lee ◽  
D. N. Zakharov ◽  
P. Reiche ◽  
R. Uecker ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Scanning Force Microscopy ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Integrated Intensity ◽  
Scanning Force

AbstractSrBi2Ta2O9 (SBT) epitaxial thin films having a mix of (100) and (116) orientations have been grown on SrLaGaO4(110) by pulsed laser deposition. X-ray diffraction θ2 θ and pole figure scans, and cross-sectional transmission electron microscopy (TEM) analyses revealed the presence of two epitaxial orientations, SBT(100) ∥ SLG(110); SBT[001] ∥ SLG[001] and SBT(116) ∥ SLG(110); SBT [110] ∥ SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are best at a substrate temperature of 775 °C and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%. By scanning force microscopy and cross-sectional TEM investigations we found that the a-axisoriented grains are rounded and protrude out due to the rapid growth along the [110] direction, leading to a distinct difference of the surface morphology between (100)- and (116)-oriented grains.

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