Photoluminescence of Cu(In1-X, GaX)Se2 Epitaxial Thin Films Grown by MOVPE

2003 ◽  
Vol 763 ◽  
Author(s):  
N. Rega ◽  
S. Siebentritt ◽  
J. Albert ◽  
M. Lux
Keyword(s):  
Thin Films ◽  
Defect Structure ◽  
Excitation Power ◽  
Intrinsic Defect ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Energy Position ◽  
X Ray ◽  
Intrinsic Defect Structure

AbstractTo study the intrinsic defect structure, detailed photoluminescence (PL) measurements of epitaxial Cu-rich Cu(In1-X, GaX)Se2 grown by metalorganic vapor phase epitaxy (MOVPE) were performed. Distinct emissions appear at an energy position 80-150meV below the bandgap. Excitation-power-dependent measurements showed blue shifts up to 18meV/decade for these emissions. The temperature dependent PL results in a defect energy for this emission of 50-80meV due to a free-to-bound (FB) transition. This indicates that the emissions of this material are controlled by fluctuating potentials due to high compensation or compositional inhomogeneity. The compositional inhomogeneity is detected by x-ray diffraction (XRD) and occurs especially for epitaxial layers grown at 570°C.

Convergent-beam parallel detection x-ray diffraction system for characterizing combinatorial epitaxial thin films

2000 ◽  
Author(s):  
Kazuhiko Omote ◽  
T. Kikuchi ◽  
J. Harada ◽  
Masashi Kawasaki ◽  
Akira Ohtomo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Parallel Detection ◽  
Convergent Beam

scholarly journals A study of (111) oriented epitaxial thin films of In2O3 on cubic Y-doped ZrO2 by synchrotron based x-ray diffraction – ERRATUM

2012 ◽  
Vol 27 (18) ◽  
pp. 2447-2447 ◽  
Author(s):  
Anna Regoutz ◽  
Kelvin H.L. Zhang ◽  
Russell G. Egdell ◽  
Didier Wermeille ◽  
Roger A. Cowley
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray

X-Ray diffraction line broadening by stacking faults in SrBi2Nb2O9/SrTiO3 epitaxial thin films

2001 ◽  
Vol 391 (1) ◽  
pp. 42-46 ◽  
Author(s):  
A. Boulle ◽  
C. Legrand ◽  
R. Guinebretière ◽  
J.P. Mercurio ◽  
A. Dauger
Keyword(s):  
Thin Films ◽  
Stacking Faults ◽  
Diffraction Line ◽  
Epitaxial Thin Films ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Thermal expansion of the new perovskite substrates DyScO3 and GdScO3

2005 ◽  
Vol 20 (4) ◽  
pp. 952-958 ◽  
Author(s):  
M.D. Biegalski ◽  
J.H. Haeni ◽  
S. Trolier-McKinstry ◽  
D.G. Schlom ◽  
C.D. Brandle ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Rare Earth ◽  
Lattice Spacing ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients ◽  
Increasing Temperature

The thermal expansion coefficients of DyScO3 and GdScO3 were determined from298 to 1273 K using x-ray diffraction. The average thermal expansion coefficients of DyScO3 and GdScO3 were 8.4 and 10.9 ppm/K, respectively. No phase transitions were detected over this range, though the orthorhombicity decreased with increasing temperature. These thermal expansion coefficients are similar to other oxide perovskites (e.g., BaTiO3 or SrTiO3), making these rare-earth scandates promising substrates for the growth of epitaxial thin films of many oxide perovskites that have similar lattice spacing and thermal expansion coefficients.

Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

1999 ◽  
Vol 59 (1-3) ◽  
pp. 198-201 ◽  
Author(s):  
F Huet ◽  
M.-A di Forte-Poisson ◽  
A Romann ◽  
M Tordjman ◽  
J di Persio ◽  
...  
Keyword(s):  
Thin Films ◽  
Defect Structure ◽  
X Ray Diffraction ◽  
X Ray
Sign in / Sign up

Export Citation Format

Share Document