High Current Implantation of Negative Copper Ions into Silica Glasses

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Kishimoto ◽  
V. T. Gritsyna ◽  
K. Kono ◽  
H. Amekura ◽  
T. Saito
Keyword(s):  
Copper Ions ◽  
Ion Beams ◽  
Negative Ion ◽  
Fixed Dose ◽  
High Dose ◽  
High Current ◽  
Surface Plasma ◽  
Silica Glasses ◽  
Dose Rates ◽  
Optical Absorption And Reflection

AbstractHigh- current implantation of Cu- ions into silica glasses has been demonstrated using mAclass negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 μA/cm2. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam- induced surface plasma may affect the high current implantation.

High‐current surface‐plasma negative‐ion sources with geometrical focusing

1990 ◽  
Vol 61 (1) ◽  
pp. 484-486 ◽  
Author(s):  
Yu. I. Belchenko ◽  
A. S. Kupriyanov
Keyword(s):  
Ion Sources ◽  
Negative Ion ◽  
High Current ◽  
Surface Plasma

Long pulse production of high current D[sup −] ion beams in the JT-60 negative ion source

2008 ◽  
Vol 79 (2) ◽  
pp. 02A519 ◽  
Author(s):  
M. Hanada ◽  
M. Kamada ◽  
N. Akino ◽  
N. Ebisawa ◽  
A. Honda ◽  
...  
Keyword(s):  
Ion Beams ◽  
Ion Source ◽  
Negative Ion ◽  
High Current ◽  
Long Pulse ◽  
Pulse Production

Nanocrystal Growth at High Dose Rates in Negative Copper-Ion Implantation Into Insulators

1997 ◽  
Vol 504 ◽  
Author(s):  
N. Kishimoto ◽  
V. T. Gritsyna ◽  
Y. Takeda ◽  
C. G. Lee ◽  
N. Umeda ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Dose Rate ◽  
Copper Ion ◽  
Negative Ions ◽  
Negative Ion ◽  
High Dose ◽  
Dose Rates ◽  
Nanocrystal Growth ◽  
Cu Ions

ABSTRACTNanoparticles of Cu were fabricated by negative-ion implantation, leading to spontaneous formation at high beam fluxes. Negative ions, alleviating surface charging, exhibit significant merits in carrying out low-energy implantation at high dose rates. The kinetic processes were studied by measuring dose-rate dependence of colloid formation and resultant optical properties. Negative-Cu ions of 60 keV were implanted into silica glasses at high-current densities, up to 260 μA/cm2, fixing the total dose at 3.0 × 1016 ions/cm2. Spherical nanocrystals of Cu atoms formed within a narrow region, near the projectile range of Cu ions. Simultaneously, much smaller particles spread out beyond a depleted zone, deeper than the projectile range. The nanocrystal growth and optical properties were greatly dependent on the dose rate and the specimen boundary condition. The growth process is explained by a droplet-model based on surface tension and radiation-induced diffusion. Beam-surface interactions also play an important role in the mass transport from the beam flux to the interior solid.

Study of Near Surface Structure and Composition for High Dose Implantation of Cr+ into Si

1983 ◽  
Vol 27 ◽  
Author(s):  
F. Namavar ◽  
J. I. Budnick ◽  
H. C. Hayden ◽  
F. A. Otter ◽  
V. Patarini
Keyword(s):  
Dose Rate ◽  
Surface Composition ◽  
High Vacuum ◽  
Target Chamber ◽  
Fixed Dose ◽  
Compositional Variation ◽  
High Dose ◽  
Rutherford Back Scattering ◽  
Near Surface ◽  
Dose Rates

ABSTRACTThe dependence of the implanted layer composition on total dose, dose rate and target chamber environment for Cr+ implanted Si have been studied by means of Rutherford Back Scattering (RBS) and Auger Electron Spectroscopy (AES). Implantation of Cr+ for doses up to 2 × 1018 ions/cm2 and a fixed dose rate and energy were carried out in an ultra high vacuum (UHV) system as well as in a diffusion pumped vacuum (DPV) system. For the former, the maximum Cr concentration was about 42%. On the other hand, implantation of Cr in a DPV system resulted in a much higher peak concentration (86%) and retention.Both the RBS and AES results positively demonstrate the existence of extensive surface carbon for a Si-rich surface and a chromium oxide layer for the Cr-rich surface. This result suggests that the interaction of oxygen or carbon occurs preferentially and depends on the surface composition.No surface compositional variation could be observed by the RBS experiments for Cr implanted in a UHV system for different dose rates. In contrast, for implantation in a DPV system, higher concentrations can be achieved for lower dose rates.

scholarly journals High Current Negative Ion Beams

1977 ◽  
Vol 24 (3) ◽  
pp. 1521-1523 ◽  
Author(s):  
K. Prelec ◽  
Th. Sluyters ◽  
M. Grossman
Keyword(s):  
Ion Beams ◽  
Negative Ion ◽  
High Current
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