High‐current surface‐plasma negative‐ion sources with geometrical focusing

1990 ◽  
Vol 61 (1) ◽  
pp. 484-486 ◽  
Author(s):  
Yu. I. Belchenko ◽  
A. S. Kupriyanov
1988 ◽  
Vol 28 (4) ◽  
pp. 568-576 ◽  
Author(s):  
Yu. I. Belchenko ◽  
G. E. Derevyankin ◽  
G. I. Dimov ◽  
V. G. Dudnikov

2010 ◽  
Vol 81 (2) ◽  
pp. 02A714 ◽  
Author(s):  
Vadim Dudnikov ◽  
Pavel Chapovsky ◽  
Andrei Dudnikov

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Kishimoto ◽  
V. T. Gritsyna ◽  
K. Kono ◽  
H. Amekura ◽  
T. Saito

AbstractHigh- current implantation of Cu- ions into silica glasses has been demonstrated using mAclass negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 μA/cm2. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam- induced surface plasma may affect the high current implantation.


1990 ◽  
Vol 61 (1) ◽  
pp. 662-664 ◽  
Author(s):  
K. W. Ehlers

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