Nanocrystal Growth at High Dose Rates in Negative Copper-Ion Implantation Into Insulators

1997 ◽  
Vol 504 ◽  
Author(s):  
N. Kishimoto ◽  
V. T. Gritsyna ◽  
Y. Takeda ◽  
C. G. Lee ◽  
N. Umeda ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Dose Rate ◽  
Copper Ion ◽  
Negative Ions ◽  
Negative Ion ◽  
High Dose ◽  
Dose Rates ◽  
Nanocrystal Growth ◽  
Cu Ions

ABSTRACTNanoparticles of Cu were fabricated by negative-ion implantation, leading to spontaneous formation at high beam fluxes. Negative ions, alleviating surface charging, exhibit significant merits in carrying out low-energy implantation at high dose rates. The kinetic processes were studied by measuring dose-rate dependence of colloid formation and resultant optical properties. Negative-Cu ions of 60 keV were implanted into silica glasses at high-current densities, up to 260 μA/cm2, fixing the total dose at 3.0 × 1016 ions/cm2. Spherical nanocrystals of Cu atoms formed within a narrow region, near the projectile range of Cu ions. Simultaneously, much smaller particles spread out beyond a depleted zone, deeper than the projectile range. The nanocrystal growth and optical properties were greatly dependent on the dose rate and the specimen boundary condition. The growth process is explained by a droplet-model based on surface tension and radiation-induced diffusion. Beam-surface interactions also play an important role in the mass transport from the beam flux to the interior solid.

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

The effects of high dose rates of ionizing radiations on solutions of iron and cerium salts

1960 ◽  
Vol 255 (1283) ◽  
pp. 490-508 ◽  
Keyword(s):  
Hydrogen Peroxide ◽  
Dose Rate ◽  
Ferrous Sulphate ◽  
High Dose ◽  
Oh Radicals ◽  
Dose Rates ◽  
Reaction Zones ◽  
Constant Dose ◽  
Ceric Sulphate ◽  
Ionizing Radiations

The electron beam generated by a 15 MeV linear accelerator has been employed to induce reactions in aerated aqueous solutions of 1 to 25 mM ferrous sulphate, and of 0⋅1 to 1 mM ceric sulphate. The radiation was delivered in pulses of 1⋅3 μ s duration and over a range of dose rates from 0⋅5 to 20000 rads/pulse. Radiation yields at constant dose rate were compared with the aid of a chemical dose monitor. A system of two thin, widely spaced, irradiation vessels was employed to determine the variation of yield of any one system over successive known ranges of dose rate. The yield of ferric sulphate in the iron system was found to decrease with increasing dose rate in the range 0⋅01 to 10 krads/pulse by an overall factor of 0⋅85, and was appreciably dependent on the initial concentrations of dissolved oxygen and of ferrous sulphate at high dose rates. Yields of hydrogen and of hydrogen peroxide were practically independent of dose rate. The observations have been interpreted on the basis of inter-radical reactions which occur when the reaction zones of neighbouring clusters overlap. The following reactions can account for all the data: OH + Fe 2+ → Fe 3+ + OH ¯ , (1) H + O 2 → HO 2 , (2) H + OH → H 2 O. (7) The values k 1 / k 7 = 0⋅0062, and k 2 / k 7 = 0⋅22 are reasonably consistent with the observations. In the ceric sulphate system the yield of cerous sulphate increases progressively over the range 0⋅01 to 10 krads/pulse by an overall factor of 1⋅4. The data accord with the view that at high dose rates OH radicals react with them selves ultimately to form hydrogen peroxide, in competition with their normal reaction with cerous sulphate.

Analysis of High Dose Implanted Silicon by High Depth Resolution Rbs and Spectroscopic Ellipsometry and TEM

1984 ◽  
Vol 35 ◽  
Author(s):  
T. Lohner ◽  
G. Mezey ◽  
M. Fried ◽  
L. GhiţA ◽  
C. Ghiţa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Composite Structures ◽  
Depth Resolution ◽  
High Dose ◽  
Detailed Characterization ◽  
High Depth ◽  
Qualitative Picture

ABSTRACTOne of the applications of high dose ion implantation is to form surface alloys or compound layers. The detailed characterization of such composite structures is of great importance. This paper tries to answer the question: how can we outline, at least, a qualitative picture from the optical properties measured by ellipsometry of high dose Al and Sb implanted silicon. Attempts are done to separate the effect of implanted impurities from the dominant disorder contribution to the measured optical properties. As the ellipsometry does not provide information enough to decide the applicability of optical models therefore methods sensitive to the structure (channeling and TEM) were applied too.

scholarly journals Fractionated versus single-dose total body irradiation at low and high dose rates to condition canine littermates for DLA-identical marrow grafts

Blood ◽  
1994 ◽  
Vol 83 (11) ◽  
pp. 3384-3389 ◽  
Author(s):  
R Storb ◽  
RF Raff ◽  
FR Appelbaum ◽  
HJ Deeg ◽  
TC Graham ◽  
...  
Keyword(s):  
Dna Repair ◽  
Single Dose ◽  
Dose Rate ◽  
Total Body Irradiation ◽  
High Dose Rate ◽  
Lymphoid Cells ◽  
High Dose ◽  
Dose Rates ◽  
Total Body ◽  
Allogeneic Marrow

Abstract We explored in dogs the immunosuppressive properties of 450 cGy total body irradiation (TBI) delivered from two opposing 60Co sources, as assessed by the criterion of successful engraftment of allogeneic genotypically DLA-identical littermate marrow. Two questions were asked in this study. Firstly, does dose rate affect the immunosuppressive effect of TBI when administered in a single dose? Secondly, does fractionation alter the immunosuppression of TBI when delivered at a very fast dose rate? Dose rates studied included 7 and 70 cGy/min, and fractionation involved four fractions of 112.5 cGy each, with 6-hour minimum interfraction intervals. Six of 7 dogs receiving 450 cGy single- dose TBI at 70 cGy/min showed sustained engraftment of the allogeneic marrow, compared with 1 of 7 dogs receiving single-dose TBI at 7 cGy/min (P = .01). Fractionated TBI at 70 cGy/min resulted in sustained allogeneic engraftment in 3 of 10 dogs, a result that was statistically significantly worse than that with single-dose TBI at 70 cGy/min (P = .03) and not statistically different (P = .24) from that with fractionated TBI delivered at 7 cGy/min (0 of 5 dogs engrafted). A single dose of 450 cGy of TBI delivered at a rate of 70 cGy/min is significantly more immunosuppressive than the same total dose delivered at 7 cGy/min. Fractionated TBI at 70 cGy/min is significantly less immunosuppressive than single-dose TBI at 70 cGy/min and not significantly different from fractionated TBI administered at 7 cGy/min. Results are consistent with the notion that significant DNA repair in lymphoid cells is possible during interfraction intervals at the relatively high dose rate of 70 cGy/min.

Etching and Charging Effects on Dose in Plasma Immersion Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Jiqun Shao ◽  
Eaton Corporation ◽  
Shu Qin ◽  
Zhuofan Zhao ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Lower Energy ◽  
Processing Time ◽  
General Relation ◽  
High Dose Rate ◽  
High Dose ◽  
Dose Estimation ◽  
Effective Current ◽  
Plasma Immersion Ion Implantation

AbstractA general relation between the implanted dose and the processing time for plasma immersion ion implantation (PHI) can be established through the dynamic sheath model. In practice, etching and charging effects have to be taken into account in PIII dose estimation.Plasma immersion ion implantation (PII) has been tested in fabrication of semiconductor devices with shallow junctions and in hydrogénation of poly-Si thin film transistors (TFT). PIII doping is more suitable than conventional implantation for such applications because of its high dose rate at lower energy. Since the dose rate in PIII does not depend on the area being treated, the effective current will be higher if a larger implanted area is involved. However, the relation between dose and time is not always straightforward. During PIII processing possible etching and charging will affect the total accumulated doses. This paper presents a model for each which allows a proper compensation to be performed.

Electron and Beta Dose Rates of UO2 Pellet and Fuel Rod

2013 ◽  
Author(s):  
Guoqing Zhang ◽  
Xuexin Wang ◽  
Jiangang Zhang ◽  
Dajie Zhuang ◽  
Chaoduan Li ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Dose Rate ◽  
Radiation Protection ◽  
High Dose Rate ◽  
High Dose ◽  
Electron Dose ◽  
Dose Rates ◽  
Fuel Rod ◽  
Calculation Results ◽  
Beta Dose

The isotopes of uranium and their daughter nuclides inside the UO2 pellet emit mono-energetic electrons and beta rays, which generate rather high dose rate near the UO2 pellet and could cause exposure to workers. In this work calculations of electron dose rates have been carried out with Monte Carlo codes, MCNPX and Geant4, for a UO2 pellet and a fuel rod. Comparisons between calculations and measurements have been carried out to verify the calculation results. The results could be used to estimate the dose produced by electrons and beta rays, which could be used to make optimization for radiation protection purpose.

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