0.1μm Interconnect Technology Challenges and the Sia Roadmap

1996 ◽  
Vol 427 ◽  
Author(s):  
Tom Seidel ◽  
Bin Zhao ◽  
Sematech ◽  
T X Austin
Keyword(s):  
Dielectric Constant ◽  
Thermal Management ◽  
Low Cost ◽  
Electrical Characterization ◽  
Barrier Materials ◽  
Low Dielectric ◽  
Technology Roadmap ◽  
Aspect Ratios ◽  
Lower Dielectric Constant ◽  
Low K

AbstractAnalysis of the National Technology Roadmap for Semiconductors (SIA) indicates a potential crisis in performance and reliability regarding the scaling of interconnects. In the future, increased component density and performance (e.g. logic instructions / sec.) may not be able to be achieved simultaneously for technology generations well before the manufacture of 0.1μm feature sizes circa 2005. Thermal management and engineering of signal noise are key issues. Although much can be done to achieve higher speed with product design architecture, one must consider new material paradigms by 0. 1μm generation to address the RC crisis.Needs exist in low cost simplified processes across a broad area of applications: local salicide interconnects, lower process temperature for poly-metal dielectric (to enable shallower junctions), lower dielectric constant materials for interconnects, and robust barriers for interconnect plugs and wiring metals. A shift to lower dielectric constant (low-k) materials (e.g. SiO-F, polymers, or aerogels) will be used as soon as integrated processes are demonstrated and manufacturing tools become available. The next full generation window of opportunity is the 0.18um generation (1GB) scheduled for manufacturing prototyping in 1998.This paper reviews the overall Roadmap characteristics, major solution strategies, and outlines the challenges in design, technology, and integration for 0.18μm and 0.1μm generations. Topics reviewed include discussion of process architectures and electrical characterization methodologies. Among the most challenging areas we have: control and lowering of contact resistance, manufacturing interconnects at aspect ratios exceeding 4:1, use of very low dielectric constant materials in multilevel counts approaching 6–7, use of controllable ultra thin barrier materials for interconnect plugs and wiring, barriers and cladding for containment and passivation of Cu, development of manufacturing worthy selective processes, engineering stress/electromigration issues and thermal management of low-k dielectric systems. New materials must be introduced into existing technology frameworks while designs migrate to lower voltage operation.

The Effect of Porogen on Physical Properties in MTMS-BTMSE Spin-on Organosilicates

2005 ◽  
Vol 875 ◽  
Author(s):  
B.R. Kim ◽  
J. M. Son ◽  
J.W. Kang ◽  
K.Y. Lee ◽  
K.K. Kang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Porous Films ◽  
Low Dielectric ◽  
Lower Dielectric Constant ◽  
Superior Mechanical Properties ◽  
Lift Off ◽  
Rc Delay ◽  
Low K

AbstractDecreasing the circuit dimensions is driving the need for low-k materials with a lower dielectric constant to reduce RC delay, crosstalk, and power consumption. In case of spin-on organosilicate low-k films, the incorporation of a porogen is regarded as the only foreseeable route to decrease dielectric constant of 2.2 or below by changing a packing density. In this study, MTMS-BTMSE copolymers that had superior mechanical properties than MSSQ were blended with decomposable polymers as pore generators. While adding up to 40 wt % porogen into MTMS:BTMSE=100:50 matrix, optical, electrical, and mechanical properties were measured and the pore structure was also characterized by PALS. The result confirmed that there existed a tradeoff in attaining the low dielectric constant and desirable mechanical strength, and no more pores than necessary to achieve the dielectric objective should be incorporated. When the dielectric constant was fixed to approximately 2.3 by controlling BTMSE and porogen contents simultaneously, the thermo-mechanical properties of the porous films were also investigated for the comparison purpose. Under the same dielectric constant, the increase in BTMSE and porogen contents led to improvement in modulus measured by the nanoindentation technique but deterioration of adhesion strength obtained by the modified edge lift-off test.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Sol–gel deposited xerogel, aerogel and porogen based porous low-k thin films: A comparative investigation

2021 ◽  
pp. 2140019
Author(s):  
Swati Gupta ◽  
Anil Gaikwad ◽  
Ashok Mahajan ◽  
Lin Hongxiao ◽  
He Zhewei
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Comparative Investigation ◽  
Crosstalk Noise ◽  
Nanoelectronic Devices ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Xerogel Films ◽  
Low K ◽  
Porosity Percentage

Low dielectric constant (Low-[Formula: see text]) films are used as inter layer dielectric (ILD) in nanoelectronic devices to reduce interconnect delay, crosstalk noise and power consumption. Tailoring capability of porous low-[Formula: see text] films attracted more attention. Present work investigates comparative study of xerogel, aerogel and porogen based porous low-[Formula: see text] films. Deposition of SiO2 and incorporation of less polar bonds in film matrix is confirmed using Fourier Transform Infra-Red Spectroscopy (FTIR). Refractive indices (RI) of xerogel, aerogel and porogen based low-[Formula: see text] films observed to be as low as 1.25, 1.19 and 1.14, respectively. Higher porosity percentage of 69.46% is observed for porogen-based films while for shrinked xerogel films, it is lowered to 45.47%. Porous structure of low-[Formula: see text] films has been validated by using Field Emission Scanning Electron Microscopy (FE-SEM). The pore diameters of porogen based annealed samples were in the range of 3.53–25.50 nm. The dielectric constant ([Formula: see text]) obtained from RI for xerogel, aerogel and porogen based films are 2.58, 2.20 and 1.88, respectively.

scholarly journals Preparation and characterization of novel naphthyl epoxy resin containing 4-fluorobenzoyl side chains for low-k dielectrics application

RSC Advances ◽  
2017 ◽  
Vol 7 (85) ◽  
pp. 53970-53976 ◽  
Author(s):  
Tianyi Na ◽  
Hao Jiang ◽  
Liang Zhao ◽  
Chengji Zhao
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Epoxy Resin ◽  
Epoxy Resins ◽  
Side Chains ◽  
The Novel ◽  
Lower Dielectric Constant ◽  
Low K

The novel naphthyl epoxy resin was synthesized and cured with MeHHPA. It showed significantly lower dielectric constant and dielectric loss than other commercial epoxy resins due to the introduction of fluorine on the side chains.

Robust spin-on-glass poly(methyl)silsesquioxane-based low-k materials derived from a cyclic siloxane precursor

RSC Advances ◽  
2015 ◽  
Vol 5 (82) ◽  
pp. 66511-66517 ◽  
Author(s):  
Albert S. Lee ◽  
Sung Yeoun Oh ◽  
Seung-Sock Choi ◽  
He Seung Lee ◽  
Seung Sang Hwang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Cyclic Siloxane ◽  
Low Dielectric ◽  
Methyl Silsesquioxane ◽  
Low K

Low dielectric constant poly(methyl)silsesquioxane spin-on-glass resins incorporating a cyclic precursor exhibited exceptional mechanical properties to withstand CMP processes.

Low k Film Etch in Applied Materials eMxP+ Chamber

1998 ◽  
Vol 544 ◽  
Author(s):  
Melissa Yu ◽  
Hongching Shan ◽  
Ashley Taylor
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Process Conditions ◽  
Plasma Etch ◽  
Absolute Value ◽  
Lower Dielectric Constant ◽  
Profile Control ◽  
Etch Stop ◽  
Anisotropic Etch ◽  
Low K

ABSTRACTThe materials with lower dielectric constant ( low k ) have been attracting attention recently because the low k material has the potential to be used in place of SiO2 in ULSI. In this work, we focused on evaluating organic low k material performance with plasma etch in the Applied Material's eMxP+ anisotropic etch chamber. The films studied were Dow Chemical BCB and Silk, Allied Signal Flare 2.0, and Du Pont FPI. The feature sizes of the wafer s were 0.25 to 1 micron trenches. Du Pont FPI resulted in the highest achieved etch rate of more than lum/min, followed by BCB, and Flare. The microloading study indicated that the etch rate microloading is less than 10% between lum and 0.25 urn feature sizes, which suggests that the chance of etch stop for a high aspect ratio features will be small. The profile could vary from bowing to vertical, to tapering by using different process conditions, mainly by temperature. The FP1 profile was more tapered than those of BCB and Flare when the same process was used to etch the same type of patterned wafer having these three different low k films. The detailed study showed that the trend of etch rate and profile for BCB and Flare film etch were similar, but that the absolute value for profile, as well as the trend of etch rate uniformity and profile were somewhat different. In conclusion, low k materials can be etched in AMAT traditional dielectric chamber (eMxP+) with a good etch rate and profile control.

High performance dielectric composites by latex compounding of graphene oxide-encapsulated carbon nanosphere hybrids with XNBR

2014 ◽  
Vol 2 (29) ◽  
pp. 11144-11154 ◽  
Author(s):  
Ming Tian ◽  
Qin Ma ◽  
Xiaolin Li ◽  
Liqun Zhang ◽  
Toshio Nishi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Graphene Oxide ◽  
Elastic Modulus ◽  
High Performance ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Low Dielectric ◽  
Low Elastic Modulus ◽  
High Dielectric ◽  
Latex Compounding

A novel dielectric composite with high dielectric constant (k), low dielectric loss, low elastic modulus and large actuated strain at a low electric field was prepared by a simple, low-cost and efficient method.

Chemical-Mechanical Planarization of Low-k Polymers for Advanced IC Structures

2002 ◽  
Vol 124 (4) ◽  
pp. 362-366 ◽  
Author(s):  
Christopher L. Borst ◽  
Dipto G. Thakurta ◽  
William N. Gill ◽  
Ronald J. Gutmann
Keyword(s):  
Dielectric Constant ◽  
Surface Chemistry ◽  
Chemical Mechanical Planarization ◽  
Low Dielectric Constant ◽  
Chemical Company ◽  
Low Dielectric ◽  
Scale Models ◽  
Physically Based ◽  
Thickness Measurements ◽  
Low K

Successful integration of copper and low dielectric constant (low-k) materials is dependent on robust chemical-mechanical planarization (CMP) during damascene patterning. This process includes the direct removal of copper and interaction of the copper slurry with the underlying dielectric. Experiments were designed and performed to examine the CMP of two low-k polymers from Dow Chemical Company, bis-benzocyclobutene (BCB*, k=2.65) and “silicon-application low-k material” (SiLK* resin, k=2.65) with both acidic slurries suitable for copper damascene patterning and a KH phthalate-based model slurry developed for SiLK. Blanket polymer films were polished in order to determine the interactions that occur when copper and liner materials are removed by the damascene CMP process. Removal rates were obtained from material thickness measurements, post-CMP surface topography from AFM scans, and post-CMP surface chemistry from XPS measurements. Physically based wafer-scale models are presented which are compatible with the experimental results.

Low-K Porous Spin-On-Glass

1999 ◽  
Vol 565 ◽  
Author(s):  
Paul A. Kohl ◽  
Agnes Padovani ◽  
Michael Wedlake ◽  
Dhananjay Bhusari ◽  
Sue Ann ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Elevated Temperatures ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Decomposition Products ◽  
Air Gaps ◽  
Low Dielectric ◽  
Polymer Decomposition ◽  
Low K ◽  
By Products

AbstractPreviously, the fabrication of air-gap structures for electrical interconnections was demonstrated using a sacrificial polymer encapsulated in conventional dielectric materials. The air-gaps were formed by thermally decomposing the sacrificial polymer and allowing the by-products to diffuse through the encapsulating dielectric. The diffusivity of the polymer decomposition products is adequate at elevated temperatures to allow the formation of air-gaps. This process was extended to form low dielectric constant, porous silica from commercially available methylsilsesquioxane (MSQ) by the addition of the sacrificial polymer to the MSQ. The porous MSQ film was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ appeared to exhibit a closed-pore structure.

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