Structure Effect on Electrical Properties of Ito Films Prepared by Rf Reactive Magnetron Sputtering

1996 ◽  
Vol 426 ◽  
Author(s):  
Li-Jian Meng ◽  
M. P. dos Santos
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Structure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Alloy Target ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Ito Films

AbstractITO films have been deposited onto glass substrates by rf reactive magnetron sputtering using In-Sn (90–10) alloy target. After the deposition, the films were annealed in air at 500 °C for 30, 60, 90 and 180 min respectively. The film structure varies as the annealing time is changed. The film electrical properties show a strongly dependence on the film structure. Although all the films show a preferred orientation along the (400) direction, the film which has high (222) diffraction peak intensity, has high carrier mobility and low resistivity.

Study of annealed Indium Tin Oxide Films Prepared by RF Reactive Magnetron Sputtering

1995 ◽  
Vol 388 ◽  
Author(s):  
Li-Jian Meng ◽  
A. Maçarico ◽  
R. Martins
Keyword(s):  
Magnetron Sputtering ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Light Trapping ◽  
Film Surface ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Deposited Film ◽  
Ito Films

AbstractTin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). the post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. the resistivity of as-deposited film is about 1.3 х 10-1 Ω*cm and decreases down to 6.9 х 10-3Ω*cm as the annealing temperature is increased up to 500 °C. IN addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering

2007 ◽  
Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Tin Oxide ◽  
Reactive Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.

Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering

2004 ◽  
Vol 22 (2) ◽  
pp. 332-338 ◽  
Author(s):  
Suguru Noda ◽  
Kun Tepsanongsuk ◽  
Yoshiko Tsuji ◽  
Yuya Kajikawa ◽  
Yoshifumi Ogawa ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Structure ◽  
Preferred Orientation ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

2014 ◽  
Vol 301 ◽  
pp. 28-33 ◽  
Author(s):  
Magdalena Szymańska ◽  
Sylwia Gierałtowska ◽  
Łukasz Wachnicki ◽  
Marcin Grobelny ◽  
Katarzyna Makowska ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Hafnium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Structural And Electrical Properties
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