Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering

2004 ◽  
Vol 22 (2) ◽  
pp. 332-338 ◽  
Author(s):  
Suguru Noda ◽  
Kun Tepsanongsuk ◽  
Yoshiko Tsuji ◽  
Yuya Kajikawa ◽  
Yoshifumi Ogawa ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Structure ◽  
Preferred Orientation ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Characterization of Titanium Nitride Films Prepared by DC Reactive Magnetron Sputtering at Different Deposition Time

2007 ◽  
Author(s):  
Kai Yang ◽  
Jianqing Jiang ◽  
Mingyuan Gu
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Titanium Nitride ◽  
Deposition Time ◽  
Adhesive Property ◽  
Preferred Orientation ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Tin Films ◽  
Dc Reactive Magnetron Sputtering

Titanium nitride (TiN) films were grown on Si (111) and 95W18Cr4V high-speed steel substrates using DC reactive magnetron sputtering technique with different deposition time. The changes in crystal growth orientation of the TiN films were measured by X-ray diffraction (XRD). The surface & cross-sectional morphologies of TiN films were analyzed using field emission scanning electron microscopy (FESEM). The hardness and adhesive property of TiN films were evaluated as well. It is found that the increase of the film thickness favors the formation of the {111} preferred orientation of TiN films. When the {111} preferred orientation is presented, TiN films exhibit a kind of surface morphology of triangular pyramid with right angles. With the increase of the film thickness, the columnar grains continuously grow lengthwise and breadthwise. The size of grains influences the hardness of TiN films more greatly. The adhesive property of the film/substrate interface decreased with increasing film thickness.

MECHANICAL AND TRIBOLOGICAL BEHAVIOR OF VN AND HfN FILMS DEPOSITED VIA REACTIVE MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (03n04) ◽  
pp. 1350040 ◽  
Author(s):  
C. ESCOBAR ◽  
M. VILLARREAL ◽  
J. C. CAICEDO ◽  
J. ESTEVE ◽  
P. PRIETO
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Film Structure ◽  
Nitrogen Atmosphere ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray ◽  
Mechanical And Tribological Properties ◽  
Pin On Disc ◽  
Steel Substrates

HfN and VN thin films were deposited onto silicon and 4140 steel substrates with r.f. reactive magnetron sputtering by using Hf and V metallic targets with 4-inch diameter and 99.9% purity in argon/nitrogen atmosphere, applying a substrate temperature of 250°C and a pressure of 1.2 × 10-3 mbar. In order to evaluate the structural, chemical, morphological, mechanical and tribological properties, we used X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX), atomic force microscopy (AFM), scanning electron microscopy (SEM), nanoindentation, pin-on-disc and scratch tests. Film structure determined by XRD showed that FCC ( NaCl -type) films are formed in both the cases by δ- HfN and δ- VN phases. Hardness and elastic modulus values obtained for both the films were 21 and 224 GPa for the HfN film and 19 and 205 GPa for the VN film, respectively. Additionally, the films showed low friction coefficient of 0.44 for HfN and 0.62 for VN when these films were evaluated against 100 Cr 6 steel, and finally the critical load was found at 41 N for the HfN film and 34 N for the VN film.

Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

1995 ◽  
Vol 67 (20) ◽  
pp. 2928-2930 ◽  
Author(s):  
J. E. Greene ◽  
J.‐E. Sundgren ◽  
L. Hultman ◽  
I. Petrov ◽  
D. B. Bergstrom
Keyword(s):  
Magnetron Sputtering ◽  
Ultrahigh Vacuum ◽  
Preferred Orientation ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Structure Effect on Electrical Properties of Ito Films Prepared by Rf Reactive Magnetron Sputtering

1996 ◽  
Vol 426 ◽  
Author(s):  
Li-Jian Meng ◽  
M. P. dos Santos
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Structure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Alloy Target ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Ito Films

AbstractITO films have been deposited onto glass substrates by rf reactive magnetron sputtering using In-Sn (90–10) alloy target. After the deposition, the films were annealed in air at 500 °C for 30, 60, 90 and 180 min respectively. The film structure varies as the annealing time is changed. The film electrical properties show a strongly dependence on the film structure. Although all the films show a preferred orientation along the (400) direction, the film which has high (222) diffraction peak intensity, has high carrier mobility and low resistivity.

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