Study of annealed Indium Tin Oxide Films Prepared by RF Reactive Magnetron Sputtering

1995 ◽  
Vol 388 ◽  
Author(s):  
Li-Jian Meng ◽  
A. Maçarico ◽  
R. Martins
Keyword(s):  
Magnetron Sputtering ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Light Trapping ◽  
Film Surface ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Deposited Film ◽  
Ito Films

AbstractTin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). the post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. the resistivity of as-deposited film is about 1.3 х 10-1 Ω*cm and decreases down to 6.9 х 10-3Ω*cm as the annealing temperature is increased up to 500 °C. IN addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Structure Effect on Electrical Properties of Ito Films Prepared by Rf Reactive Magnetron Sputtering

1996 ◽  
Vol 426 ◽  
Author(s):  
Li-Jian Meng ◽  
M. P. dos Santos
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Structure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Alloy Target ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Ito Films

AbstractITO films have been deposited onto glass substrates by rf reactive magnetron sputtering using In-Sn (90–10) alloy target. After the deposition, the films were annealed in air at 500 °C for 30, 60, 90 and 180 min respectively. The film structure varies as the annealing time is changed. The film electrical properties show a strongly dependence on the film structure. Although all the films show a preferred orientation along the (400) direction, the film which has high (222) diffraction peak intensity, has high carrier mobility and low resistivity.

Study of Annealed Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 695-699 ◽  
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
K.M. Hakim ◽  
M.H. Mamat ◽  
S. Najwa ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
High Annealing Temperature ◽  
High Annealing ◽  
Deposited Film ◽  
Post Deposition ◽  
Ito Films

Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on glass and silicon (111) substrates by RF magnetron sputtering using a nickel target and ITO (In-Sn, 90%-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties on ITO films was studied. We found the appearance of (411) and (622) peaks in addition to (400) and (222) major peaks, which indicates an improvement of the film crystallinity at high annealing temperature of 650°C. The samples show higher transmittance of more than 90% at 460 nm after annealing. In addition, increasing the annealing temperatures also improve the film electrical properties. The resistivity decreases to 6.67×10-6Ωcm when annealed at 500°C as opposed to 6.75×10-5Ωcm in as-deposited film.

Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application

2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Visible Region ◽  
Film Surface ◽  
Optical Transmittance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Indium Zinc Oxide

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering

2007 ◽  
Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Tin Oxide ◽  
Reactive Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.

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