Formation of V1-xWxO2 thermochromic films by reactive magnetron sputtering with an alloy target

1995 ◽  
Author(s):  
Ping Jin ◽  
Kazuki Yoshimura ◽  
S. Iwama ◽  
Sakae Tanemura
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Alloy Target

Electrochromic properties of Ni(V)Ox films deposited via reactive magnetron sputtering with a 8V–92Ni alloy target

2010 ◽  
Vol 519 (5) ◽  
pp. 1578-1582 ◽  
Author(s):  
Jia-Ming Ye ◽  
Yu-Pin Lin ◽  
Yueh-Ting Yang ◽  
Jing-Tang Chang ◽  
Ju-Liang He
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Electrochromic Properties ◽  
Alloy Target

Investigation on the Structure and Properties of TiAlN Coatings Deposited by DC Reactive Magnetron Sputtering

2010 ◽  
Vol 154-155 ◽  
pp. 1639-1642
Author(s):  
Xuan Wang ◽  
Kui Zhang ◽  
Guang Hui Yue ◽  
Dong Liang Peng ◽  
Zheng Bing Qi ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tial Alloy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Compact Structure ◽  
Flow Rates ◽  
Dc Power ◽  
Dc Reactive Magnetron Sputtering ◽  
Alloy Target ◽  
N2 Flow Rate

TiAlN coatings have been deposited by reactive magnetron sputtering from TiAl alloy target using a direct current (DC) power source. The crystal structure, chemical composition, surface morphology and hardness of TiAlN coatings which were prepared at various N2 flow rates have been systemically investigated. The results show a strong effect of N2 flow rates on the orientation, grain size and densification in TiAlN coatings. The TiAlN coating shows the highest hardness at a certain N2 flow rate when it has the most compact structure.

Structure Effect on Electrical Properties of Ito Films Prepared by Rf Reactive Magnetron Sputtering

1996 ◽  
Vol 426 ◽  
Author(s):  
Li-Jian Meng ◽  
M. P. dos Santos
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Structure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Alloy Target ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Ito Films

AbstractITO films have been deposited onto glass substrates by rf reactive magnetron sputtering using In-Sn (90–10) alloy target. After the deposition, the films were annealed in air at 500 °C for 30, 60, 90 and 180 min respectively. The film structure varies as the annealing time is changed. The film electrical properties show a strongly dependence on the film structure. Although all the films show a preferred orientation along the (400) direction, the film which has high (222) diffraction peak intensity, has high carrier mobility and low resistivity.

Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Turan ◽  
Q. Wahab ◽  
L. Hultman ◽  
M. Willander ◽  
J. -E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
Interface State ◽  
State Density ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Mos Structure ◽  
Transmission Electron ◽  
Wide Bandgap Materials

ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

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