Low Temperature Growth of Nanocrystalline Silicon From SiF4 + SiH4

1996 ◽  
Vol 424 ◽  
Author(s):  
Yu Chen ◽  
M. Taguchi ◽  
S. Wagner
Keyword(s):  
Electrical Conductivity ◽  
Low Temperature ◽  
Strong Influence ◽  
Nanocrystalline Silicon ◽  
Film Structure ◽  
Constant Thickness ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Arsenic Doping ◽  
Si Films

AbstractThe electrical conductivity of nc-Si films grown from SiF4 and H2 with constant arsenic doping rises from 10-5 to 10 Scm-1 as the thickness rises from ˜ 0.1 to 1 μm. This variation demonstrates the strong influence of film structure on conductivity. We show that the conductivity of undoped nc-Si films of constant thickness can be varied by adding SiH4 to the SiF4 and H2 source gas.

scholarly journals Low Temperature Growth of Polycrystalline Si Films Using Pulsed-Plasma CVD under Near Atmospheric Pressure

2008 ◽  
Vol 51 (10) ◽  
pp. 653-656
Author(s):  
Mitsutaka MATSUMOTO ◽  
Yasutake TOYOSHIMA ◽  
Setsuo NAKAJIMA ◽  
Maki SUEMITSU
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Si Films

Comparison of low temperature growth of Si thin films on amorphous substrates by MBE and PECVD methods

2000 ◽  
Vol 609 ◽  
Author(s):  
J. A. Anna Selvan ◽  
D. Grützmacher ◽  
E. Müller ◽  
M. Rebien ◽  
M. Kummer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Average Width ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Glass Substrates ◽  
Amorphous Substrates ◽  
Amorphous Glass ◽  
Si Films

ABSTRACTLow temperature growth of thin crystalline Si films on amorphous glass substrates by Molecular Beam Epitaxy (MBE) as well as by two different plasma enhanced chemical vapour deposition (PECVD) systems both using a DC plasma was carried out and the mictrostructural properties were analysed. In particular, the control over the texture along [220] orientation and the resulting columnar nature of the films were studied. The TEM cross section of Si films grown by MBE shows grains with an average width of 750 nm and a length of 3 microns. Using the low energy PECVD (LEPECVD) technique microcrystalline Si films were obtained with a growth rate of up to 35Å/sec. For high quality Si films with larger grains one may grow Si films by MBE whereas for Si films with passivated grain boundaries and for increased deposition rate, it is preferred to grow Si films by the newly developed methods of DC-PECVD.

A novel low-temperature growth of uniform CuInS2 thin films and their application in selenization/sulfurization-free CuInS2 solar cells

2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cuins2 Thin Films

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth
Sign in / Sign up

Export Citation Format

Share Document