Low temperature growth of nanocrystalline silicon carbide films

2013 ◽  
Author(s):  
K. Kefif ◽  
Y. Bouizem ◽  
A. Belfedal ◽  
J. D. Sib ◽  
L. Chahed
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Nanocrystalline Silicon ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Nanocrystalline Silicon Carbide

Low Temperature Growth of Nanocrystalline Silicon From SiF4 + SiH4

1996 ◽  
Vol 424 ◽  
Author(s):  
Yu Chen ◽  
M. Taguchi ◽  
S. Wagner
Keyword(s):  
Electrical Conductivity ◽  
Low Temperature ◽  
Strong Influence ◽  
Nanocrystalline Silicon ◽  
Film Structure ◽  
Constant Thickness ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Arsenic Doping ◽  
Si Films

AbstractThe electrical conductivity of nc-Si films grown from SiF4 and H2 with constant arsenic doping rises from 10-5 to 10 Scm-1 as the thickness rises from ˜ 0.1 to 1 μm. This variation demonstrates the strong influence of film structure on conductivity. We show that the conductivity of undoped nc-Si films of constant thickness can be varied by adding SiH4 to the SiF4 and H2 source gas.

Low temperature direct growth of nanocrystalline silicon carbide films

2000 ◽  
Vol 69-70 ◽  
pp. 530-535 ◽  
Author(s):  
S Kerdiles ◽  
R Rizk ◽  
F Gourbilleau ◽  
A Pérez-Rodrı́guez ◽  
B Garrido ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Nanocrystalline Silicon ◽  
Direct Growth ◽  
Nanocrystalline Silicon Carbide
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