A model for the low‐temperature growth of epitaxial Ge and Si films from GeH2and SiH2radicals produced by UV photolysis of GeH4and SiH4

1986 ◽  
Vol 59 (6) ◽  
pp. 2015-2018 ◽  
Author(s):  
T. Motooka ◽  
J. E. Greene
1996 ◽  
Vol 424 ◽  
Author(s):  
Yu Chen ◽  
M. Taguchi ◽  
S. Wagner

AbstractThe electrical conductivity of nc-Si films grown from SiF4 and H2 with constant arsenic doping rises from 10-5 to 10 Scm-1 as the thickness rises from ˜ 0.1 to 1 μm. This variation demonstrates the strong influence of film structure on conductivity. We show that the conductivity of undoped nc-Si films of constant thickness can be varied by adding SiH4 to the SiF4 and H2 source gas.


2008 ◽  
Vol 51 (10) ◽  
pp. 653-656
Author(s):  
Mitsutaka MATSUMOTO ◽  
Yasutake TOYOSHIMA ◽  
Setsuo NAKAJIMA ◽  
Maki SUEMITSU

2000 ◽  
Vol 609 ◽  
Author(s):  
J. A. Anna Selvan ◽  
D. Grützmacher ◽  
E. Müller ◽  
M. Rebien ◽  
M. Kummer ◽  
...  

ABSTRACTLow temperature growth of thin crystalline Si films on amorphous glass substrates by Molecular Beam Epitaxy (MBE) as well as by two different plasma enhanced chemical vapour deposition (PECVD) systems both using a DC plasma was carried out and the mictrostructural properties were analysed. In particular, the control over the texture along [220] orientation and the resulting columnar nature of the films were studied. The TEM cross section of Si films grown by MBE shows grains with an average width of 750 nm and a length of 3 microns. Using the low energy PECVD (LEPECVD) technique microcrystalline Si films were obtained with a growth rate of up to 35Å/sec. For high quality Si films with larger grains one may grow Si films by MBE whereas for Si films with passivated grain boundaries and for increased deposition rate, it is preferred to grow Si films by the newly developed methods of DC-PECVD.


2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  

1983 ◽  
Vol 61 (7) ◽  
pp. 1935-1940 ◽  
Author(s):  
C. J. Andrews ◽  
Y. C. Paliwal

Cold hardness and ice encasement tolerance of 'Fredrick' and 'Norstar' winter wheats as affected by infection with barley yellow dwarf virus (BYDV) were determined during inoculation, disease development periods, and low-temperature growth. Plants were either prehardened to cold, or warm grown before infection; two disease development periods (DDP) were utilized. A long DDP induced greater pathogenesis and greater hardiness reduction than a short DDP. The effect of virus infection on the final level of hardiness of prehardened plants was generally greater than on that of nonprehardened plants. Viral infection reduced hardiness up to 3.5 °C in 'Fredrick' wheat, but reductions of 6–10 °C below hardiness potential were recorded after certain environmental regimes allowing disease development. Ice tolerance was reduced by BYDV infection in early low-temperature growth but was increased by infection after 4 months at low temperature. This increase in survival was associated with higher dry matter content in infected than in noninfected plants.


2011 ◽  
Vol 109 (7) ◽  
pp. 07B743 ◽  
Author(s):  
Fu-Te Yuan ◽  
A. C. Sun ◽  
Jui-Kuo Mei ◽  
W. M. Liao ◽  
Jen-Hwa Hsu ◽  
...  

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