scholarly journals Low Temperature Growth of Polycrystalline Si Films Using Pulsed-Plasma CVD under Near Atmospheric Pressure

2008 ◽  
Vol 51 (10) ◽  
pp. 653-656
Author(s):  
Mitsutaka MATSUMOTO ◽  
Yasutake TOYOSHIMA ◽  
Setsuo NAKAJIMA ◽  
Maki SUEMITSU
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Si Films

Low-Temperature Growth of Polycrystalline AlN Films by Microwave Plasma CVD

1990 ◽  
Vol 29 (Part 2, No. 2) ◽  
pp. L358-L360 ◽  
Author(s):  
Yoshihiro Someno ◽  
Makoto Sasaki ◽  
Toshio Hirai
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
Plasma Cvd ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Microwave Plasma Cvd

Low-Temperature Growth of Sodium Carbonate Bicarbonate Dehydrate Nanoneedles Under Atmospheric Pressure

2016 ◽  
Vol 8 (10) ◽  
pp. 811-814
Author(s):  
Youngran Choi ◽  
Seungil Jo ◽  
Nae-Man Park ◽  
Min Soo Kim ◽  
Hyunsoo Kim
Keyword(s):  
Low Temperature ◽  
Sodium Carbonate ◽  
Atmospheric Pressure ◽  
Temperature Growth ◽  
Low Temperature Growth

Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure

2008 ◽  
Vol 1066 ◽  
Author(s):  
Mitsutaka Matsumoto ◽  
Yohei Inayoshi ◽  
Maki Suemitsu ◽  
Setsuo Nakajima ◽  
Tsuyoshi Uehara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Short Pulse ◽  
Inert Gases ◽  
Pulsed Plasma ◽  
Pulsed Discharge ◽  
Plasma Cvd ◽  
Plastic Films ◽  
Temperature Deposition ◽  
Pet Films

ABSTRACTLow temperature (150 °C) deposition of doped and undoped polycrystalline Si (poly-Si) as well as SiNX films on polyethylene terephthalate (PET) films has been achieved with practical deposition rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2 for poly-Si while N2 has been additionally used for SiNx. No inert gases such as He was used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. With this technique, deposition of poly-Si thin film with virtually no incubation layer is possible, which in the case of P-doped poly-Si shows a Hall mobility (μH) of 1.5 cm2/V·s.

Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

2019 ◽  
Vol 25 (5) ◽  
pp. 345-350
Author(s):  
Mitsutaka Matsumoto ◽  
Syun Ito ◽  
Yohei Inayoshi ◽  
Shogo Murashige ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Plastic Film ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Si Films
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