Dry Etching of SiC for Advanced Device Applications

1996 ◽  
Vol 421 ◽  
Author(s):  
J. R. Flemish ◽  
K. Xie ◽  
G. F. Mclane
Keyword(s):  
Silicon Carbide ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Alternative Methods ◽  
Free Surfaces ◽  
Wide Availability ◽  
Device Applications ◽  
Etch Rates

AbstractIn this paper we review and compare most of the published results on dry etching of silicon carbide using various techniques. The vast majority of reports have used RIE methods due to the wide availability of such reactors. Recently, alternative methods of magnetron enhanced RIE (MIE) and electron cyclotron resonance (ECR) plasmas have been demonstrated. MIE has resulted in extremely high etch rates and ECR etching has resulted in smooth, residue-free surfaces with an ability to control the etched profiles.

Patterning of LiGaO2 and LiAlO2 by Wet and Dry Etching

1996 ◽  
Vol 449 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
R. G. Wilson ◽  
B. L. Chai ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
High Selectivity ◽  
Electron Cyclotron Resonance ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Acid Solutions ◽  
Lattice Constants ◽  
Etch Rates ◽  
Dry Etch

ABSTRACTLiGaO2 and LiAlO2 have similar lattice constants to GaN, and may prove useful as substrates for III-nitride epitaxy. We have found that these materials may be wet chemically etched in a number of acid solutions, including HF, at rates between 150–40,000 Å/min. Dry etching with SF6/Ar plasmas provides faster rates than Cl2/Ar or CH4/H2/Ar under Electron Cyclotron Resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metalorganic/hydride counterparts. Dry etch rates are low ( < 2, 000 Å/min), providing high selectivity (>5) over the nitrides. The incorporation of hydrogen in these materials is also of interest because this could provide a reservoir of hydrogen that may passivate dopants in overlying nitride films. In 2H implanted samples, 50 % of the deuterium is lost by evolution from the surface by annealing at 400 °C for 20 min and all of the deuterium is gone at 700°C. The diffusivity of 2H is ∼10-13 cm2/s at 250°C in LiA1O2, approximately two orders of magnitude higher than in LiGaO2.

The role of oxygen in electron cyclotron resonance etching of silicon carbide

2006 ◽  
Vol 83 (1) ◽  
pp. 9-11 ◽  
Author(s):  
J.H. Xia ◽  
Rusli ◽  
S.F. Choy ◽  
R. Gopalakrishan ◽  
C.C. Tin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron

Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2

1996 ◽  
Vol 421 ◽  
Author(s):  
R. J. Shul ◽  
A. G. Baca ◽  
D. J. Rieger ◽  
H. Hou ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Plasma Chemistry ◽  
Electron Cyclotron ◽  
Wide Range ◽  
Etch Rates

AbstractElectron cyclotron resonance (ECR) etching of GaP, GaAs, InP, and InGaAs are reported as a function of percent chlorine-containing gas for Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2 plasma chemistries. GaAs and GaP etch rates were faster than InP and InGaAs, independent of plasma chemistry due to the low volatility of the InClx, etch products. GaAs and GaP etch rates increased as %Cl2 was increased for Cl2/Ar and Cl2/N2 plasmas. The GaAs and GaP etch rates were much slower in BCl3-based plasmas due to lower concentrations of reactive Cl, however enhanced etch rates were observed in BCl3/N2 at 75% BCl3. Smooth etched surfaces were obtained over a wide range of plasma chemistries.

Optimization of Electron Cyclotron Resonance Reactive Ion Beam Etching Reactors for Dry Etching of GaAs with Cl2

1997 ◽  
Vol 144 (9) ◽  
pp. 3191-3197 ◽  
Author(s):  
K. Nishioka ◽  
M. Sugiyama ◽  
M. Nezuka ◽  
Y Shimogaki ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

Comparison of dry etching of III-V semiconductors in ICl/Ar and IBr/Ar electron cyclotron resonance plasmas

1997 ◽  
Vol 26 (11) ◽  
pp. 1314-1319 ◽  
Author(s):  
J. W. Lee ◽  
J. Hong ◽  
E. S. Lambers ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Dry Etching ◽  
Electron Cyclotron
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