Dry Etching of GaAs , AlGaAs , and GaSb Using Electron Cyclotron Resonance and Radio Frequency  CH 4 /  H 2 / Ar or  C 2 H 6 /  H 2 / Ar Discharges

1991 ◽  
Vol 138 (5) ◽  
pp. 1432-1439 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Perley ◽  
W. S. Hobson ◽  
M. Geva
Keyword(s):  
Radio Frequency ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Dry Etching ◽  
Electron Cyclotron

Patterning of LiGaO2 and LiAlO2 by Wet and Dry Etching

1996 ◽  
Vol 449 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
R. G. Wilson ◽  
B. L. Chai ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
High Selectivity ◽  
Electron Cyclotron Resonance ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Acid Solutions ◽  
Lattice Constants ◽  
Etch Rates ◽  
Dry Etch

ABSTRACTLiGaO2 and LiAlO2 have similar lattice constants to GaN, and may prove useful as substrates for III-nitride epitaxy. We have found that these materials may be wet chemically etched in a number of acid solutions, including HF, at rates between 150–40,000 Å/min. Dry etching with SF6/Ar plasmas provides faster rates than Cl2/Ar or CH4/H2/Ar under Electron Cyclotron Resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metalorganic/hydride counterparts. Dry etch rates are low ( < 2, 000 Å/min), providing high selectivity (>5) over the nitrides. The incorporation of hydrogen in these materials is also of interest because this could provide a reservoir of hydrogen that may passivate dopants in overlying nitride films. In 2H implanted samples, 50 % of the deuterium is lost by evolution from the surface by annealing at 400 °C for 20 min and all of the deuterium is gone at 700°C. The diffusivity of 2H is ∼10-13 cm2/s at 250°C in LiA1O2, approximately two orders of magnitude higher than in LiGaO2.

Optimization of Electron Cyclotron Resonance Reactive Ion Beam Etching Reactors for Dry Etching of GaAs with Cl2

1997 ◽  
Vol 144 (9) ◽  
pp. 3191-3197 ◽  
Author(s):  
K. Nishioka ◽  
M. Sugiyama ◽  
M. Nezuka ◽  
Y Shimogaki ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching
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