Optical and transport properties of amorphous and microcrystalline silicon films prepared by excimer laser assisted rf glow-discharge deposition

1998 ◽  
Vol 16 (2) ◽  
pp. 436-443 ◽  
Author(s):  
P. Roca i Cabarrocas ◽  
N. Layadi ◽  
M. Kunst ◽  
C. Clerc ◽  
H. Bernas
1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka

2003 ◽  
Vol 762 ◽  
Author(s):  
T. Allen ◽  
I. Milostnaya ◽  
D. Yeghikyan ◽  
K. Leong ◽  
F. Gaspari ◽  
...  

AbstractIn the D.C. saddle field glow discharge deposition the transition from amorphous to microcrystalline silicon thin films occurs when the silane concentration in the gas phase drops below 10%. We report here the results of Raman spectroscopy, SEM, TEM, and HRTEM studies of the film morphology. We estimate the average crystallite size to be in the range of 5 to 7 nm and the crystalline volume fraction of 25 to 35%.


1996 ◽  
Vol 420 ◽  
Author(s):  
F. Gaspari ◽  
L. S. Sidhu ◽  
S. K. O'leary ◽  
S. Zukotynski

AbstractWe present a dc saddle-field glow-discharge deposition procedure which combines the positive attributes of the conventional dc and rf glow-discharge techniques. Preliminary mass spectra analyses of both silane and methane glow-discharges demonstrates that ions constitute a significant fraction of the species reaching the film surface. Growth rate analyses suggest that ions play a significant role in the saddle-field glow-discharge deposition of amorphous semiconducting films.


2004 ◽  
Vol 10 (S02) ◽  
pp. 648-649
Author(s):  
Tatiana Allen ◽  
Davit Yeghikyan ◽  
Keith Leong ◽  
Nazir Kherani ◽  
William Roes ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


1987 ◽  
Vol 61 (7) ◽  
pp. 2501-2508 ◽  
Author(s):  
A. M. Antoine ◽  
B. Drevillon ◽  
P. Roca i Cabarrocas

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