Temperature Sensor On Boron Ion Implanted Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
R. Job ◽  
A. V. Denisenko ◽  
A. M. Zaitsev ◽  
M. Werner ◽  
A. A. Melnikov ◽  
...  
Keyword(s):  
Activation Energy ◽  
Temperature Sensor ◽  
Boron Concentration ◽  
Theoretical Models ◽  
Boron Doped Diamond ◽  
Compensation Ratio ◽  
Boron Doped ◽  
Sensor Fabrication ◽  
Postimplantation Annealing ◽  
P Type

ABSTRACTp-type semiconducting boron doped layers have been fabricated on diamond substrates by ion implantation and subsequent annealing. A number of the related published experimental data and theoretical models on electrical properties of boron doped diamond are analyzed with regard to the temperature coefficient of resistance (TCR) of temperature sensors. The dependencies of the conductivity and activation energy on three parameters: (i) boron doping level NA, (ii) electrical compensation ratio ND/NA- C and (iii) duration of the postimplantation annealing time ta are studied. By variation of NA, C and t, an optimized technological regime for the temperature sensor fabrication can be obtained. One can summarize that: 1) the TCR value is not remarkably reduced with the boron concentration up to NA -1019 cm-3, 2) an increase of the electrical compensation decreases the activation energy and consequently the TCR coefficient,3) 1 h annealing at 1500°C is sufficient to remove the compensating radiation defects, 4) the variation of the ta from 1 min to 1 h changes the TCR value by 20% to 30%. Technological steps of the fabrication of a micro temperature sensor are given.

Hydrogen Diffusion in Boron Doped Diamond: Evidence of Hydrogen-Boron Interactions

1998 ◽  
Vol 510 ◽  
Author(s):  
J. Chevallier ◽  
B. Theys ◽  
C. Grattepain ◽  
A. Deneuville ◽  
E. Gheeraert
Keyword(s):  
Activation Energy ◽  
Boron Concentration ◽  
Hydrogen Diffusion ◽  
Diffusion Activation Energy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Hydrogen Ionization ◽  
Diffusion Temperature ◽  
And Diffusion ◽  
Diffusion Activation

AbstractDeuterium diffusion has been investigated in boron doped diamond as a function of the diffusion temperature and the boron concentration. The results show that, up to 480°C, hydrogen diffusion is limited by the boron concentration with a diffusion activation energy of 0.35 eV for [B] = 5×1019 cm−3. This first experimental evidence of deuterium-boron interactions in diamond is interpreted as the result of hydrogen ionization and diffusion of fairly mobile protons which form pairs with negatively charged boron acceptors

Growth of Device-Quality Homoepitaxial Diamond Thin Films

1989 ◽  
Vol 162 ◽  
Author(s):  
M. W. Geis
Keyword(s):  
Activation Energy ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Diamond Growth ◽  
High Resistivity ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Heavily Doped ◽  
P Type

ABSTRACTDiamond has an electric-field breakdown 20 times that of Si and GaAs, and a saturated velocity twice that of Si. This results in a predicted cut off frequency for high-power diamond transistors 40 times that of similar devices made of Si or GaAs. Boron is the only known impurity that can be used to lightly dope diamond. This p-type dopant has an activation energy of 0.3 to 0.4 eV, which results in high-resistivity material that is undesirable for devices. However, heavily boron doped diamond has a very small activation energy and a low resistivity and is of device quality. Transistors can be designed that use only undoped and heavily doped diamond. One of the steps in a device fabrication sequence is homoepitaxial diamond growth. Lightly and heavily doped homoepitaxial diamond films were characterized by scanning and transmission electron microscopy, x-ray diffraction, measurements of resistivity as a function of temperature, and secondary ion mass spectroscopy. It was found that under appropriate growth conditions these films are of device quality.

Some Recent Advances on the n-Type Doping of Diamond

2005 ◽  
Vol 108-109 ◽  
pp. 703-708
Author(s):  
Jacques Chevallier ◽  
T. Kociniewski ◽  
Cecile Saguy ◽  
R. Kalish ◽  
C. Cytermann ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Ionization Energy ◽  
Boron Doped Diamond ◽  
Shallow Donors ◽  
Compensation Ratio ◽  
Boron Doped ◽  
Recent Advances ◽  
High Ionization ◽  
P Type ◽  
Phosphorus Doped

The n-type doping of diamond with phosphorus suffers from defects reducing the electron mobilities and inducing some degree of compensation. In addition, the relatively high ionization energy (0.6 eV) of phosphorus severely limits the electrical activity of the dopants. Here, we present two recent advances of the n-type doping of diamond. One is based on the significant reduction of the compensation ratio of highly compensated phosphorus-doped diamond by thermal annealings. The second one presents the possibility of converting p-type boron-doped diamond into n-type by deuterium diffusion and formation of deuterium-related shallow donors with ionization energy of 0.33 eV.

Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation

2020 ◽  
Vol 105 ◽  
pp. 104740 ◽  
Author(s):  
Tong Zhang ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Qiliang Wang ◽  
Shaoheng Cheng ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
P Type

Dye-sensitization of boron-doped diamond foam: champion photoelectrochemical performance of diamond electrodes under solar light illumination

RSC Advances ◽  
2015 ◽  
Vol 5 (99) ◽  
pp. 81069-81077 ◽  
Author(s):  
Hana Krysova ◽  
Ladislav Kavan ◽  
Zuzana Vlckova Zivcova ◽  
Weng Siang Yeap ◽  
Pieter Verstappen ◽  
...  
Keyword(s):  
Electrode Materials ◽  
Hollow Spheres ◽  
Dye Sensitized Solar Cells ◽  
Light Illumination ◽  
Photoelectrochemical Performance ◽  
Boron Doped Diamond ◽  
Dye Sensitization ◽  
Boron Doped ◽  
Donor Acceptor ◽  
P Type

Diamond foams composed of hollow spheres of polycrystalline boron-doped diamond are chemically modified with two donor–acceptor type molecular dyes, BT-Rho and CPDT-Fur, and tested as electrode materials for p-type dye-sensitized solar cells.

scholarly journals Boron–oxygen complex yields n-type surface layer in semiconducting diamond

2019 ◽  
Vol 116 (16) ◽  
pp. 7703-7711 ◽  
Author(s):  
Xiaobing Liu ◽  
Xin Chen ◽  
David J. Singh ◽  
Richard A. Stern ◽  
Jinsong Wu ◽  
...  
Keyword(s):  
Chemical Properties ◽  
Shallow Donor ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
High Pressure High Temperature ◽  
Type Semiconductor ◽  
High Carrier ◽  
Semiconducting Diamond ◽  
P Type ◽  
Physical And Chemical

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (∼0.778 × 1021 cm−3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ∼1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond

2004 ◽  
Vol 84 (11) ◽  
pp. 1895-1897 ◽  
Author(s):  
Ying Dai ◽  
Dadi Dai ◽  
Donghong Liu ◽  
Shenghao Han ◽  
Baibiao Huang
Keyword(s):  
Boron Doped Diamond ◽  
Type Conductivity ◽  
Boron Doped ◽  
P Type
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