Microstructural Characterization of Platinum Films Grown by Mocvd

1995 ◽  
Vol 403 ◽  
Author(s):  
M. Vellaikal ◽  
S. K. Streiffer ◽  
R. R. Woolcott ◽  
A. I. Kingon
Keyword(s):  
Surface Roughness ◽  
Film Thickness ◽  
Side Wall ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Si Substrates ◽  
Wall Film ◽  
Conformal Coverage ◽  
Formation Resistivity ◽  
Pt Films

AbstractPlatinum thin films were deposited on SiO2/Si(100) by metalorganic chemical vapor deposition using Pt(acetylacetonate) and Pt(hexaflouroacetylacetonate) as precursors. The films were characterized in terms of orientation, surface roughness and morphology. As expected, Pt(111) was the preferred orientation. Higher substrate temperatures led to higher growth rates and increased surface roughness. The presence of oxygen during deposition decreased the minimum substrate temperature required for platinum deposition, indicating that oxygen played a role in the decomposition of these metalorganic compounds. Annealing platinum films at 550°C in an oxygen ambient resulted in hillock formation. Resistivity measurements showed that films deposited without oxygen were more resistive. Conformal coverage of platinum on patterned SiO2/Si substrates was investigated, and a side wall film thickness to top film thickness ratio of 0.6 for growth at 400°C was obtained. These Pt films produced by MOCVD displayed greater surface roughnesses than films grown by evaporation or sputtering.

Surface Roughness and Growth Texture of (Ba,Sr)TiO3 Thin Films Formed by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Y. Gao ◽  
P. Alluri ◽  
S. He ◽  
M. Engelhard ◽  
A.S. Lea ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Film Growth ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Pure Oxygen ◽  
Si Substrates ◽  
Direct Liquid Injection ◽  
Plasma Enhancement

AbstractMetalorganic chemical vapor deposition (MOCVD) has been used to grow (Ba,Sr)TiO3 thin films on Ir/SiO2/Si substrates. β-diketonates of Ba, Sr, and Ti were used as the precursors, and delivered to the reactor via direct-liquid injection. Growth rate and film thickness were monitored by in-situ spectroscopic ellipsometry, and determined after growth. Film growth was studied as a function of film thickness, composition, substrate temperature, and mixture of O2 and N2O with and without microwave plasma enhancement. Dense, mirror-like films were obtained under all conditions except when pure oxygen plasma enhancement was used. Surface roughness of the films appears strongly dependent on film thickness and composition. Film composition and growth temperature determine growth texture of the films. This paper describes these results as well as the correlation between these results and dielectric properties.

Electrical and Optical Properties of GaAs Heteroepitaxial Films on Si Substrates

1986 ◽  
Vol 77 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Masafumi Yamaguchi
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Film Thickness ◽  
Film Surface ◽  
Chemical Vapor ◽  
Induced Current ◽  
Electrical And Optical Properties ◽  
Si Substrates ◽  
Interface Charges ◽  
Electron Beam Induced Current

ABSTRACTElectrical and optical properties of single-domain GaAs heteroepitaxial films grown on Si(100) by using metalorganic chemical vapor deposition have been investigated. Cathodolumi-nescence and electron-beam induced current experiments have revealed that signal nonuniformities on the film surface agree in number with GaAs microdefect densities observed through chemical etching, rather than conventional aligned etch-pit densities. The cathodoluminescence experiments also indicate that GaAs properties are improved with increases in film thickness. This nonuniformity and the film-thickness dependence are related to GaAs solar cell characteristics fabricated on the Si substrate. A GaAs/Si interface study proves that p-type Si substrates cause type conversions near the interface due to GaAs growth. Evidence of positive interface charges in the GaAs/Si system is determined by using Hall effect measurements, secondary-ion mass spectroscopy and electron-beam induced current experiments.

The Effect of Hydrogen Dilution on the Hot-Wire Deposition of Microcrystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
H. N. Wanka ◽  
R. Zedlitz ◽  
M. Heintze ◽  
M. B. Schubert
Keyword(s):  
Surface Roughness ◽  
Film Thickness ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Interface Layer ◽  
Hot Wire ◽  
Nucleation Layer ◽  
Pronounced Increase ◽  
Hydrogen Dilution ◽  
20 Nm

AbstractThe growth of amorphous (a-Si:H) and microcrystalline (pc-Si) silicon by hot-wire chemical vapor deposition (HWCVD) has been studied by combining in-situ ellipsometry, atomic force microscopy (AFM), and Raman spectroscopy. Generally a dense nucleation layer is formed during a-Si:H HWCVD, containing nuclei about 0.8 nm high and 10 to 20 nm in diameter. The surface roughness gradually increases with film thickness and settles at a root mean square (RMS) value of 1.6 nm at about 200 nm thickness. For hydrogen dilution at gas flow ratios x=[H2]/[SiH4] of 15 to 120 microcrystalline material was obtained. The grain size and nucleation layer, however, are strongly dependent on x. Low H2 dilution enhances the formation of an amorphous-like interface layer from which the μc-Si:H growth eventually starts. Increasing x promotes the etching of amorphous regions and the surface diffusion of precursors, resulting in larger nuclei. X = 30 yields extended μc-Si nuclei (30 nm height, 90 nm diameter) and a pronounced increase in surface roughness for thicker films, but suppresses the formation of the amorphous-like nucleation layer. A further increase in x remarkably lowers the growth rate, but smoother surfaces at comparable film thickness and larger lateral dimensions of the grains occur. This is interpreted as incipient etching of the crystallites.

Deposition and Etching of Conformal Boron Films for Neutron Detector Applications

2011 ◽  
Vol 1307 ◽  
Author(s):  
Nicholas LiCausi ◽  
Justin Clinton ◽  
Yaron Danon ◽  
James J.-Q. Lu ◽  
Ishwara B. Bhat
Keyword(s):  
Vapor Deposition ◽  
Neutron Detector ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Conformal Coverage ◽  
Wet Chemical ◽  
Wet Chemical Etching

ABSTRACTIn this work, the deposition of boron using low pressure chemical vapor deposition (LPCVD) has been investigated on planar and deep reactive ion etched (DRIE) Si substrates. Deposition rate and conformal coverage have been studied. Additional studies of “dry” RIE etching and “wet” chemical etching of the deposited boron films are presented. Deposition rates as high as 1 μm/hr and conformal coverage ratios of ~80% have been achieved. Etching rates for various methods studied range widely from 0.35 μm/hr to 1.2 μm/min.

Structural Evolution of Nanocrystalline Germanium Thin Films with Film Thickness and Substrate Temperature

2003 ◽  
Vol 762 ◽  
Author(s):  
William B. Jordan ◽  
Eric D. Carlson ◽  
Todd R. Johnson ◽  
Sigurd Wagner
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe structure of germanium thin films prepared on glass by plasma enhanced chemical vapor deposition was characterized by Raman spectroscopy, atomic force microscopy (AFM) and field emission scanning electron microscopy (SEM). Crystallinity, surface roughness, and grain size were measured as functions of film thickness and deposition temperature. Grain nucleation was apparent for films as thin as 10 nm. Over the thickness range studied, grain size increased with film thickness, whereas average surface roughness started to increase with film thickness, but then remained fairly constant at approximately 1 nm for a film thickness greater than 25 nm.

The Optical Properties of Channel Waveguides in Batio3 Thin Films

1996 ◽  
Vol 446 ◽  
Author(s):  
B. A. Block ◽  
B. W. Wessels ◽  
D. M. Gill ◽  
C. W. Conrad ◽  
S. T. Ho
Keyword(s):  
Surface Roughness ◽  
Metalorganic Chemical Vapor Deposition ◽  
Side Wall ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Surface Scattering ◽  
Wall Roughness ◽  
Scattering Loss ◽  
Waveguide Loss ◽  
Channel Waveguides

AbstractBaTiO3 epitaxial films have been prepared on (001) MgO substrates by metalorganic chemical vapor deposition. The as‐deposited 0.2 μm thick films had a surface roughness of 12 nm. Channel waveguides were fabricated from the films and the optical throughput measured. To differentiate the surface scattering loss from the internal scattering loss, waveguides were also prepared with a surface planarization step to reduce the surface roughness to 2.5 nm. The waveguide loss was greatly reduced for the planarized waveguides. The results indicate that surface and side wall roughness accounted for the majority of the waveguide loss. Grain boundary grooving lead to surface roughness and routes to overcome this problem are discussed.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

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