Electrical and Optical Properties of GaAs Heteroepitaxial Films on Si Substrates

1986 ◽  
Vol 77 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Masafumi Yamaguchi
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Film Thickness ◽  
Film Surface ◽  
Chemical Vapor ◽  
Induced Current ◽  
Electrical And Optical Properties ◽  
Si Substrates ◽  
Interface Charges ◽  
Electron Beam Induced Current

ABSTRACTElectrical and optical properties of single-domain GaAs heteroepitaxial films grown on Si(100) by using metalorganic chemical vapor deposition have been investigated. Cathodolumi-nescence and electron-beam induced current experiments have revealed that signal nonuniformities on the film surface agree in number with GaAs microdefect densities observed through chemical etching, rather than conventional aligned etch-pit densities. The cathodoluminescence experiments also indicate that GaAs properties are improved with increases in film thickness. This nonuniformity and the film-thickness dependence are related to GaAs solar cell characteristics fabricated on the Si substrate. A GaAs/Si interface study proves that p-type Si substrates cause type conversions near the interface due to GaAs growth. Evidence of positive interface charges in the GaAs/Si system is determined by using Hall effect measurements, secondary-ion mass spectroscopy and electron-beam induced current experiments.

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

2016 ◽  
Vol 55 ◽  
pp. 72-78 ◽  
Author(s):  
Vladimir Neplokh ◽  
Ahmed Ali ◽  
François H. Julien ◽  
Martin Foldyna ◽  
Ivan Mukhin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Nanowire Arrays ◽  
Induced Current ◽  
Si Substrates ◽  
Microscopy Investigation ◽  
Electron Beam Induced Current ◽  
Gan Nanowire

Effect of Thickness on the Structural, Electrical and Optical Properties of ZnO Films Deposited by MBE

2011 ◽  
Vol 311-313 ◽  
pp. 1271-1276 ◽  
Author(s):  
Xiao Dong Yang ◽  
Shi Chen Su ◽  
Yi Xu ◽  
Ting Mei
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Film Surface ◽  
Growth Time ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Optical Absorbance ◽  
Sapphire Substrates ◽  
Different Thickness

A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural, electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing, and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance, Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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