Surface Roughness and Growth Texture of (Ba,Sr)TiO3 Thin Films Formed by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Y. Gao ◽  
P. Alluri ◽  
S. He ◽  
M. Engelhard ◽  
A.S. Lea ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Film Growth ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Pure Oxygen ◽  
Si Substrates ◽  
Direct Liquid Injection ◽  
Plasma Enhancement

AbstractMetalorganic chemical vapor deposition (MOCVD) has been used to grow (Ba,Sr)TiO3 thin films on Ir/SiO2/Si substrates. β-diketonates of Ba, Sr, and Ti were used as the precursors, and delivered to the reactor via direct-liquid injection. Growth rate and film thickness were monitored by in-situ spectroscopic ellipsometry, and determined after growth. Film growth was studied as a function of film thickness, composition, substrate temperature, and mixture of O2 and N2O with and without microwave plasma enhancement. Dense, mirror-like films were obtained under all conditions except when pure oxygen plasma enhancement was used. Surface roughness of the films appears strongly dependent on film thickness and composition. Film composition and growth temperature determine growth texture of the films. This paper describes these results as well as the correlation between these results and dielectric properties.

Deposition of Ru Thin Films by MOCVD Using Direct Liquid Injection System

2001 ◽  
Vol 672 ◽  
Author(s):  
Sang Y. Kang ◽  
Cheol S. Hwang ◽  
Hyeong J. Kim
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Injection System ◽  
Organic Chemical ◽  
Si Substrates ◽  
Liquid Injection ◽  
Liquid Source ◽  
Metal Organic ◽  
Direct Liquid Injection

ABSTRACTRu thin films were deposited on SiO2/Si and (Ba,Sr)TiO3 [BST]/Pt/TiO2/SiO2/Si substrates using Ru(C2H5C5H4)2 [Ru(EtCp)2] by metal-organic chemical vapor deposition (MOCVD). To determine the effects of the solvent, C4H8O [tetrahydrofuran: THF], it was injected into the reaction chamber by the Direct Liquid Injection (DLI) system while Ru(EtCp)2 was input through the bubbler system. Also, Ru thin films were deposited using a liquid source, Ru(EtCp)2 dissolved in THF, delivered by the DLI system. The surface of the Ru thin films deposited on the BST substrate using only Ru(EtCp)2 through the bubbler system was very rough and milky, but the addition of THF made the surface of the films smooth and clean. In addition, Ru films deposited at 325°C using Ru(EtCp)2 dissolved in THF through the DLI system have a dense and smooth microstructure with resistivity as low as 15µωcm.

Microstructural Characterization of Platinum Films Grown by Mocvd

1995 ◽  
Vol 403 ◽  
Author(s):  
M. Vellaikal ◽  
S. K. Streiffer ◽  
R. R. Woolcott ◽  
A. I. Kingon
Keyword(s):  
Surface Roughness ◽  
Film Thickness ◽  
Side Wall ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Si Substrates ◽  
Wall Film ◽  
Conformal Coverage ◽  
Formation Resistivity ◽  
Pt Films

AbstractPlatinum thin films were deposited on SiO2/Si(100) by metalorganic chemical vapor deposition using Pt(acetylacetonate) and Pt(hexaflouroacetylacetonate) as precursors. The films were characterized in terms of orientation, surface roughness and morphology. As expected, Pt(111) was the preferred orientation. Higher substrate temperatures led to higher growth rates and increased surface roughness. The presence of oxygen during deposition decreased the minimum substrate temperature required for platinum deposition, indicating that oxygen played a role in the decomposition of these metalorganic compounds. Annealing platinum films at 550°C in an oxygen ambient resulted in hillock formation. Resistivity measurements showed that films deposited without oxygen were more resistive. Conformal coverage of platinum on patterned SiO2/Si substrates was investigated, and a side wall film thickness to top film thickness ratio of 0.6 for growth at 400°C was obtained. These Pt films produced by MOCVD displayed greater surface roughnesses than films grown by evaporation or sputtering.

Structural Evolution of Nanocrystalline Germanium Thin Films with Film Thickness and Substrate Temperature

2003 ◽  
Vol 762 ◽  
Author(s):  
William B. Jordan ◽  
Eric D. Carlson ◽  
Todd R. Johnson ◽  
Sigurd Wagner
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe structure of germanium thin films prepared on glass by plasma enhanced chemical vapor deposition was characterized by Raman spectroscopy, atomic force microscopy (AFM) and field emission scanning electron microscopy (SEM). Crystallinity, surface roughness, and grain size were measured as functions of film thickness and deposition temperature. Grain nucleation was apparent for films as thin as 10 nm. Over the thickness range studied, grain size increased with film thickness, whereas average surface roughness started to increase with film thickness, but then remained fairly constant at approximately 1 nm for a film thickness greater than 25 nm.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Fabrication and Evaluation of SiO2 Thin Films on Si Substrates by Microwave Plasma in Various Conditions

2020 ◽  
Vol 140 (4) ◽  
pp. 186-192
Author(s):  
Shumpei Ogawa ◽  
Tatsuya Kuroda ◽  
Yasuyuki Katou ◽  
Hironori Haga ◽  
Hiroki Ishizaki
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Si Substrates

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

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